Abstract: A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.

Abstract: A film deposition apparatus includes a turntable having a substrate mounting area, a first plasma gas supplying part, a second plasma supplying part, a first plasma gas generating part to convert the first plasma generating gas to first plasma, and a second plasma generating part provided away from the first plasma generating part in a circumferential direction and to convert the second plasma generating gas to second plasma. The first plasma generating part includes an antenna facing the turntable so as to convert the first plasma generating gas to the first plasma, and a grounded Faraday shield between the antenna and an area where a plasma process is performed, and to include plural slits respectively extending in directions perpendicular to the antenna and arranged along an antenna extending direction to prevent an electric field from passing toward the substrate and to pass a magnetic field toward the substrate.

Abstract: A film deposition apparatus includes a turntable including plural substrate placing areas in the circumferential direction; a gas nozzle provided to extend from an inner edge to an outer edge of the substrate placing area; a gas evacuation port provided outside of an outer edge of the turntable and downstream in a rotational direction of the turntable with respect to the gas nozzle for evacuating the gas; and a regulation member including a wall portion provided between the gas nozzle and the gas evacuation port for isolating the gas nozzle and the gas evacuation port at least at a part between the inner edge to the outer edge of the substrate placing area while having a space extending from the inner edge to the outer edge of the substrate placing area when a substrate is placed on the substrate placing area.

Abstract: An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.

Abstract: A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.

Abstract: A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.

Abstract: A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.

Abstract: A film deposition apparatus includes a turntable having a substrate mounting area, a first plasma gas supplying part, a second plasma supplying part, a first plasma gas generating part to convert the first plasma generating gas to first plasma, and a second plasma generating part provided away from the first plasma generating part in a circumferential direction and to convert the second plasma generating gas to second plasma. The first plasma generating part includes an antenna facing the turntable so as to convert the first plasma generating gas to the first plasma, and a grounded Faraday shield between the antenna and an area where a plasma process is performed, and to include plural slits respectively extending in directions perpendicular to the antenna and arranged along an antenna extending direction to prevent an electric field from passing toward the substrate and to pass a magnetic field toward the substrate.

Abstract: A disclosed film deposition apparatus which forms a film on a substrate inside a vacuum chamber including a turntable having a substrate mounting area, includes an antenna facing the substrate mounting area for converting the plasma generating gas to plasma, a Faraday shield intervening between the antenna and the substrate to prevent an electric field of an electromagnetic field from passing therethrough, the Faraday shield including slits arranged on the conductive plate parallel to the antenna, the slits being opened on the conductive plate in perpendicular to a direction of arranging the slits to enable a magnetic field to reach the substrate, a window opened in an area of the conductive plate surrounded by the slits, an inner conductive path between the slits and the window and grounded, and an outer conductive path on a side opposite to the window relative to the slits and surrounds the slits.

Abstract: A film deposition apparatus includes a turntable including plural substrate placing areas in the circumferential direction; a gas nozzle provided to extend from an inner edge to an outer edge of the substrate placing area; a gas evacuation port provided outside of an outer edge of the turntable and downstream in a rotational direction of the turntable with respect to the gas nozzle for evacuating the gas; and a regulation member including a wall portion provided between the gas nozzle and the gas evacuation port for isolating the gas nozzle and the gas evacuation port at least at a part between the inner edge to the outer edge of the substrate placing area while having a space extending from the inner edge to the outer edge of the substrate placing area when a substrate is placed on the substrate placing area.

Abstract: A plasma process apparatus for processing a substrate by using plasma including a vacuum chamber in which the processing of the substrate is performed, a turntable inside the vacuum chamber, the turntable having at least one substrate receiving area, a rotation mechanism rotating the turntable, a gas supplying part supplying plasma generation gas to the substrate receiving area, a main plasma generating part ionizing the plasma generation gas, being provided in a position opposite to a passing area of the substrate receiving area, and extending in a rod-like manner from a center portion of the turntable to an outer circumferential portion of the turntable, an auxiliary plasma generating part compensating for insufficient plasma of the main plasma generating part, the auxiliary plasma generating part being separated from the main plasma generating part in a circumferential direction of the vacuum chamber, and an evacuating part evacuating the vacuum chamber.

Abstract: A silicon oxide film is deposited by rotating a rotation table on which a wafer W is placed to allow BTBAS gas to be adsorbed on an upper surface of the wafer W and supply a O3 gas to the upper surface of the wafer W for allowing the BTBAS gas adsorbed on the upper surface of the wafer W to react. After depositing the silicon oxide film, a reforming process is performed every deposition cycle by supplying a plasma of Ar gas to the silicon oxide film on the wafer from an activated gas injector.

Abstract: An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.