Abstract: Provided are a metal-resin composite having excellent adhesive strength, a method for producing the same, a busbar, a module case, and a resinous connector part. The metal-resin composite comprises a metallic member 1 including a metal with a high melting point of 500° C. or more, a resin member 2 being integrated with the metallic member 1; and an alloy layer 3 including a metal with a low melting point lower than 500° C. The alloy layer 3 is arranged between the metallic member 1 and the resin member 2, and has average surface roughness thereof in the range from 5 nm or more to less than 1 ?m at the interface between the alloy layer 3 and the resin member 2. Herein, a period of the unevenness formed on the interface of the alloy layer 3 is in the range from 5 nm or more to less than 1 ?m.

Abstract: Provided are a metal-resin composite having excellent adhesive strength, a method for producing the same, a busbar, a module case, and a resinous connector part. The metal-resin composite comprises a metallic member 1 including a metal with a high melting point of 500° C. or more, a resin member 2 being integrated with the metallic member 1; and an alloy layer 3 including a metal with a low melting point lower than 500° C. The alloy layer 3 is arranged between the metallic member 1 and the resin member 2, and has average surface roughness thereof in the range from 5 nm or more to less than 1 ?m at the interface between the alloy layer 3 and the resin member 2. Herein, a period of the unevenness formed on the interface of the alloy layer 3 is in the range from 5 nm or more to less than 1 ?m.

Abstract: Reliability is improved by improving adhesiveness, crack resistance, and moisture resistance of a metal member-resin jointed body by enhancing adhesiveness between the metal member and the resin. A jointed body of a metal member and a resin including: an intermediate layer and a silane coupling agent layer formed on the metal member at an interface between the metal member and the resin, wherein the silane coupling agent layer and the resin are contacted; the intermediate layer is any one of an oxide layer of the metal, a chelating agent layer, a composite layer made of the oxide layer and the chelating agent layer, and a mixed layer made of the oxide and the chelating agent; and the intermediate layer has an electrically non-insulating characteristic, and a method of manufacturing the same.

Abstract: A power semiconductor module includes a heat sink; a circuit board connected to the heat sink via a bonding material and formed with a wiring on a front surface of an insulating substrate; a transistor device including a main electrode and a control electrode formed on one surface and a back surface electrode formed on the other surface, the back surface electrode being connected to the circuit board via a bonding material; a first conductive member bonded to the main electrode via a bonding material; and wire or ribbon-shaped connection terminals that electrically connect the first conductive member and the control electrode with another device or the circuit board, wherein the control electrode is disposed at a corner portion of the main electrode, and the first conductive member has a shape in which the first conductive member is cut out at a portion above the control electrode.

Abstract: There is provided an enameled insulated wire, which includes: a metal conductor; an intermediate layer around the metal conductor, the intermediate layer containing metal oxide particles, the metal oxide particles including at least one oxide selected from a group consisting of zinc oxides, tin oxides, compound oxides of zinc and the metal constituent of the metal conductor, and compound oxides of tin and the metal constituent of the metal conductor, diameter of the metal oxide particles being predominantly from 1 to 50 nm; and an insulation coating around the intermediate layer.

Abstract: In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided.

Abstract: In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided.

Abstract: A fabrication method for a resin encapsulated semiconductor device includes the steps of: (1) die-bonding a semiconductor device to a first electrical connection metallic terminal of a wiring substrate; (2) electrically connecting an electrode of the semiconductor device and a second electrical connection metallic terminal of the wiring substrate via an electrical connector; (3) surface treating such an assembly by applying a solution to a surface of the assembly and baking the applied solution; and (4) transfer-molding an insulating encapsulating resin onto the surface-treated assembly.

Abstract: An object of the present invention is to provide a composition of a sintering Ag paste which can metallically bond to a nonprecious metal member with high strength as well as to a precious metal member, in a sintering Ag paste which metallically bonds to a metal at a low temperature, and to provide a bonding method to obtain a joint part having high strength. The sintering Ag paste is a material containing a solution of an organic silver complex that is easily decomposed by heat regardless of an atmosphere. Furthermore, the bonding method includes: metallizing a face of a nonprecious metal with Ag in a non-oxidizing atmosphere in a step prior to sintering Ag particles; and then sintering the Ag particles in an oxidizing atmosphere.

Abstract: Provided are a metal-resin composite having excellent adhesive strength, a method for producing the same, a busbar, a module case, and a resinous connector part. The metal-resin composite comprises a metallic member 1 including a metal with a high melting point of 500° C. or more, a resin member 2 being integrated with the metallic member 1; and an alloy layer 3 including a metal with a low melting point lower than 500° C. The alloy layer 3 is arranged between the metallic member 1 and the resin member 2, and has average surface roughness thereof in the range from 5 nm or more to less than 1 ?m at the interface between the alloy layer 3 and the resin member 2. Herein, a period of the unevenness formed on the interface of the alloy layer 3 is in the range from 5 nm or more to less than 1 ?m.

Abstract: An object of the present invention is to provide a composition of a sintering Ag paste which can metallically bond to a nonprecious metal member with high strength as well as to a precious metal member, in a sintering Ag paste which metallically bonds to a metal at a low temperature, and to provide a bonding method to obtain a joint part having high strength. The sintering Ag paste is a material containing a solution of an organic silver complex that is easily decomposed by heat regardless of an atmosphere. Furthermore, the bonding method includes: metallizing a face of a nonprecious metal with Ag in a non-oxidizing atmosphere in a step prior to sintering Ag particles; and then sintering the Ag particles in an oxidizing atmosphere.

Abstract: A fabrication method for a resin encapsulated semiconductor device includes the steps of: (1) die-bonding a semiconductor device to a first electrical connection metallic terminal of a wiring substrate; (2) electrically connecting an electrode of the semiconductor device and a second electrical connection metallic terminal of the wiring substrate via an electrical connector; (3) surface treating such an assembly by applying a solution to a surface of the assembly and baking the applied solution; and (4) transfer-molding an insulating encapsulating resin onto the surface-treated assembly.

Abstract: A fabrication method for a metal-base/polymer-resin bonded structured body according to the present invention includes the steps of: (1) applying, to a surface of the metal base, a solution containing an organometallic compound decomposable at 350° C. or lower; (2) baking the applied solution in an oxidizing atmosphere to form, on the surface of the metal base, a coating containing an oxide of the metal of the organometallic compound; (3) providing the polymer resin on the coating; and (4) hardening the polymer resin to provide the metal-base/polymer-resin bonded structured body.

Abstract: There is provided an enameled insulated wire, which includes: a metal conductor; an intermediate layer around the metal conductor, the intermediate layer containing metal oxide particles, the metal oxide particles including at least one oxide selected from a group consisting of zinc oxides, tin oxides, compound oxides of zinc and the metal constituent of the metal conductor, and compound oxides of tin and the metal constituent of the metal conductor, diameter of the metal oxide particles being predominantly from 1 to 50 nm; and an insulation coating around the intermediate layer.

Abstract: In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided.

Abstract: Through an improvement of module size increase due to mounting a single passive element on a substrate and an increase in the mounting cost, to provide a highly reliable, high performance and small sized electronic circuit component which permits to integrate a variety of electronic parts such as capacitors, inductors and resistors in a high density with low cost. The electronic circuit component comprises an insulator substrate, a plurality of electrodes having different areas provided on the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, a metal wiring connecting the elements, a metal terminal part of a part of the metal wiring and an organic insulator material covering the elements and the circumference of the metal wiring portion excluding the metal terminal portion.

Abstract: A fabrication method for a metal-base/polymer-resin bonded structured body according to the present invention includes the steps of: (1) applying, to a surface of the metal base, a solution containing an organometallic compound decomposable at 350° C. or lower; (2) baking the applied solution in an oxidizing atmosphere to form, on the surface of the metal base, a coating containing an oxide of the metal of the organometallic compound; (3) providing the polymer resin on the coating; and (4) hardening the polymer resin to provide the metal-base/polymer-resin bonded structured body.

Abstract: A wiring glass substrate includes a glass substrate formed of glass and having a plurality of holes formed at predetermined positions, bumps so formed as to be connected to a conductive material filling the holes and wirings formed on a surface opposite to a surface having the bumps formed thereon and electrically connecting a plurality of connection terminals arranged in intervals different from intervals of the holes to the conductive material. The shape of the conductive material is porous and porous electrodes are bonded to the inner wall surfaces of the holes by an anchor effect to increase the strength of the glass substrate.

Abstract: A pillar with a high aspect ratio is transferred by a nanoprinting method. In order to form a fine structure on a substrate, a nanoprinting apparatus heats and presses the substrate and a mold with a fine concave-convex pattern formed thereon, the mold having a mechanism for transferring and applying a mold-releasing agent. A method for transferring a fine structure using the aforementioned nanoprinting apparatus.

Abstract: Through an improvement of module size increase due to mounting a single passive element on a substrate and an increase in the mounting cost, to provide a highly reliable, high performance and small sized electronic circuit component which permits to integrate a variety of electronic parts such as capacitors, inductors and resistors in a high density with low cost. The electronic circuit component comprises an insulator substrate, a plurality of electrodes having different areas provided on the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, a metal wiring connecting the elements, a metal terminal part of a part of the metal wiring and an organic insulator material covering the elements and the circumference of the metal wiring portion excluding the metal terminal portion.