Abstract: The heat transfer path (the heat radiating portion) from a position very near the semiconductor device as the heat source to the surface of the semiconductor apparatus is made of a material having a large heat conductivity thereby to more rapidly transfer the heat generated in the p-n junction to the surface of the semiconductor apparatus or the outside. This arrangement can cope with that the calorific power is increased as the integration is increased. The formation of the good heat conductive material from the surface of the apparatus to the heat source through the multilayer structure film can be attained by means of the CVD technique.

Abstract: An apparatus for containing semiconductor wafers and performing heat treatment thereon. Heaters disposed in a high temperature furnace form at least one heating space therein. An insertion and retrieval aperture is disposed at the lower portion of each heating space for allowing passage of wafers therethrough. Each of the heating spaces is adapted to receive one or two wafers and to provide simultaneous and uniform heat treatment on the wafers.

Abstract: A boiling type cooling structure for cooling semiconductor chips mounted on printed circuit cards, with a heat conductive stud being attached to the surface of each chip. Cooling plates with fins, arranged so as to surround the circumference of each heat conductive stud, are placed between the printed circuit cards in order to condense the vapor bubbles produced near the heat conductive studs.

Abstract: In an apparatus wherein heat generating bodies such as integrated circuit chips are cooled by utilizing boiling of a liquid; a heat transfer apparatus characterized in that a heat conductive member which has a plurality of layers of cavity groups and apertures for bringing the cavity groups into communication is installed on a surface of each of the heat generating bodies.

Abstract: A condensing, a heat-transfer wall for liquefying vapor having a temperature higher than the wall by bringing the vapor in contact therewith. There are provided many parallel grooves in the basic surface of the heat-transfer wall, thereby defining ridge portions or build-up portions thereamong. These ridge portions have their tip portions tapered at sharp acute angle. Recessed or concave portions are provided in the tip portions of these ridge portions, and these recessed portions have their surfaces inclined to the basic surface of the heat-transfer wall. The width of the respective grooves ranges from 0.05 to 2.5 mm, and the depth thereof is not more than 10 mm. The thickness of the respective ridge portions ranges from 0.01 to 2.5 mm, and the height there of is not more than 10 mm. The depth of the recessed portions ranges from 0.02 to 0.8 times the depth of the grooves, and the pitch of recessed portion is not more than 2.0 mm. The width of the tip portions of the portions is 0.01 to 1.