Abstract: Examples include techniques for a memory module per row activate counter. The techniques include detecting a row hammer or row disturb condition for a row address at a volatile memory device if an activate count to the row address matches a threshold count. The activate count is maintained by a controller for the memory module. Detection of the row hammer or row disturb condition can cause refresh management actions to mitigate the row hammer or row disturb condition.

Abstract: Examples herein relate to a solid state drive that includes a media, first circuitry, and second circuitry. In some examples, the first circuitry is to execute one or more commands. In some examples, the second circuitry is to receive a configuration of at one type of command, where the configuration is to define an amount of media bandwidth allocated for the at one type of command; receive a command; and assign the received command to the first circuitry for execution.

Abstract: A memory subsystem triggers dynamic switching for memory devices to provide access to active memory devices and prevent access to inactive memory devices. Dynamic switching enables a single bus to switch between multiple memory devices whose capacity otherwise exceeds the capacity of the single bus. A switch can be mounted in a memory module or directly on a motherboard alongside the memory devices. A memory controller can toggle a chip select signal as a single control signal to drive the switch. Each switch includes pairs of field effect transistors (FETs), including any of CMOS, NMOS and PMOS FETs. The switch electrically isolates inactive memory devices to prevent access without the need to electrically short the devices.

Abstract: Techniques to couple a high bandwidth memory device on a silicon substrate and a package substrate are disclosed. Examples include selectively activating input/out (I/O) or command and address (CA) contacts on a bottom side of a logic layer for the high bandwidth device based on a mode of operation. The I/O and CA contacts are for accessing one or more memory devices include in the high bandwidth memory device via one or more data channels.

Abstract: Examples herein relate to a solid state drive that includes a media, first circuitry, and second circuitry. In some examples, the first circuitry is to execute one or more commands. In some examples, the second circuitry is to receive a configuration of at one type of command, where the configuration is to define an amount of media bandwidth allocated for the at one type of command; receive a command; and assign the received command to the first circuitry for execution.

Abstract: Techniques to couple a high bandwidth memory device on a silicon substrate and a package substrate are disclosed. Examples include selectively activating input/out (I/O) or command and address (CA) contacts on a bottom side of a logic layer for the high bandwidth device based on a mode of operation. The I/O and CA contacts are for accessing one or more memory devices include in the high bandwidth memory device via one or more data channels.

Abstract: Techniques and mechanisms for incorporating an integrated circuit (IC) die into a die stack. In an embodiment, the die comprises multiple interconnects extending vertically through the die. The multiple interconnects comprise first interconnects which participate in communications via a first channel, second interconnects which participate in communications via a second channel, and third interconnects which are locally insulated from any transmitter or receiver circuitry of the die. Along a direction within a horizontal plane, the third interconnects are in an alternating arrangement with the first interconnects and the second interconnects, wherein the first interconnects and the second interconnects are on opposite sides of a line which is orthogonal to the direction.

Abstract: Technologies for preserving error correction capability in compute-in-memory operations in a memory include memory media and a media access circuitry coupled with the memory media. The media access circuitry is to detect an error code adjustment state indicative of a failure in the initiated error correction. The media access circuitry is to adjust a voltage to the memory media to eliminate the error code correction adjustment state. Once eliminated, the media access circuitry is to perform the error correction on the read data.

Abstract: Techniques to couple a high bandwidth memory device on a silicon substrate and a package substrate are disclosed. Examples include selectively activating input/out (I/O) or command and address (CA) contacts on a bottom side of a logic layer for the high bandwidth device based on a mode of operation. The I/O and CA contacts are for accessing one or more memory devices include in the high bandwidth memory device via one or more data channels.

Abstract: Technologies for performing in-memory macro operations include a memory having a media access circuitry connected to a memory media. The media access circuitry is to receive a request to perform an in-memory macro operation indicative of a set of multiple in-memory operations. The media access circuitry is also to perform, in response to the request, the in-memory macro operation on data present in the memory media.

Abstract: Techniques to couple a high bandwidth memory device on a silicon substrate and a package substrate are disclosed. Examples include selectively activating input/out (I/O) or command and address (CA) contacts on a bottom side of a logic layer for the high bandwidth device based on a mode of operation. The I/O and CA contacts are for accessing one or more memory devices include in the high bandwidth memory device via one or more data channels.

Abstract: An example of an apparatus may include memory organized as at least one bank that includes two or more arrays, and circuitry communicatively coupled to the memory to select respective rows of the two or more arrays of a bank for a memory access operation based on an access orientation signal. Other examples are disclosed and claimed.

Abstract: Systems, apparatuses, and methods include technology that identifies that a first memory cell of a plurality of memory cells stores data that is associated with a multiply-accumulate operation. The plurality of memory cells is associated with a multiply-accumulator (MAC). The technology executes a connection operation to electrically connect the first memory cell to the MAC to execute the multiply-accumulate operation. A second memory cell of the plurality of memory cells is electrically disconnected from the MAC during the multiply-accumulate operation. The technology executes, with the MAC, the multiply-accumulate operation based on the data.

Abstract: Embodiments include electronic packages and methods of forming such packages. An electronic package includes a memory module comprising a first memory die. The first memory die includes first interconnects with a first pad pitch and second interconnects with a second pad pitch, where the second pad pitch is less than the first pad pitch. The memory module also includes a redistribution layer below the first memory die, and a second memory die below the redistribution layer, where the second memory die has first interconnects with a first pad pitch and second interconnects with a second pad pitch. The memory module further includes a mold encapsulating the second memory die, where through mold interconnects (TMIs) provide an electrical connection from the redistribution layer to mold layer. The TMIs may be through mold vias. The TMIs may be made through a passive interposer that is encapsulated in the mold.

Abstract: Embodiments disclosed herein include memory architectures with stacked memory dies. In an embodiment, an electronic device comprises a base die and an array of memory dies over and electrically coupled to the base die. In an embodiment, the array of memory dies comprise caches. In an embodiment, a compute die is over and electrically coupled to the array of memory dies. In an embodiment, the compute die comprises a plurality of execution units.

Abstract: Examples herein relate to a solid state drive that includes a media, first circuitry, and second circuitry. In some examples, the first circuitry is to execute one or more commands. In some examples, the second circuitry is to receive a configuration of at one type of command, where the configuration is to define an amount of media bandwidth allocated for the at one type of command; receive a command; and assign the received command to the first circuitry for execution.

Abstract: Technologies for providing multiple tier memory media management include a memory having a media access circuitry connected to a memory media. The media access circuitry is to receive a request to perform an in-memory compute operation. Additionally, the media access circuitry is to read, in response to the request, data from a memory media region of the memory media, write the read data into a compute media region of the memory, perform, on the data in the compute media region, the in-memory compute operation, write, to the memory media region, resultant data indicative of a result of performance of the in-memory compute operation.

Abstract: Technologies for preserving error correction capability in compute-near-memory operations in a memory include memory media and a media access circuitry coupled with the memory media. The media access circuitry is to detect an error code adjustment state indicative of a failure in the initiated error correction. The media access circuitry is to adjust a voltage to the memory media to eliminate the error code correction adjustment state. Once eliminated, the media access circuitry is to perform the error correction on the read data.

Abstract: Examples herein relate to a solid state drive that includes a media, a processing system, and a media command arbiter configured to permit execution of a specific allocation of storage and compute commands based on a configuration, wherein the media command arbiter is to transfer commands to the media based on the configuration. The media can be locally connected to a compute engine processing system that is configurable to perform computations on data stored in the media. The configuration can indicate a number of compute commands and storage commands that are permitted to be performed over a period of time or media bandwidth allocated to compute commands and storage commands. The processing system can include an inference engine that performs one or more of: data pattern recognition, image recognition, augmented reality overlay applications, face recognition, object recognition, or voice recognition, language translation.

Abstract: Technologies for provisioning error-corrected data for use in in-memory compute operations include a memory that includes a memory media having multiple memory partitions and media access circuitry coupled to the memory media. The media access circuitry is to receive a request to perform an in-memory compute operation on data from the memory media. The request specifies a memory partition of the memory media in which the data is located. The media access circuitry reads the data from the memory partition. The media access circuitry performs error correction on the read data to produce error-corrected read data and stores the error-corrected read data in a temporary buffer for access by one or more in-memory compute operations, in addition to the requested in-memory compute operation.