Patents by Inventor Shigemasa Matsuda

Shigemasa Matsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Growth of planar, non-polar, group-III nitride films
    Patent number: 8450192
    Abstract: Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
    Type: Grant
    Filed: September 9, 2008
    Date of Patent: May 28, 2013
    Assignees: The Regents of the University of California, Japan Science and Technology Center
    Inventors: Benjamin A. Haskell, Paul T. Fini, Shigemasa Matsuda, Michael D. Craven, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • GROWTH OF PLANAR, NON-POLAR, GROUP-III NITRIDE FILMS
    Publication number: 20090001519
    Abstract: Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
    Type: Application
    Filed: September 9, 2008
    Publication date: January 1, 2009
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE JAPAN SCIENCE AND TECHNOLOGY CENTER
    Inventors: Benjamin A. Haskell, Paul T. Fini, Shigemasa Matsuda, Michael D. Craven, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
    Patent number: 7427555
    Abstract: Highly planar non-polar GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
    Type: Grant
    Filed: July 15, 2003
    Date of Patent: September 23, 2008
    Assignees: The Regents of the University of California, The Japan Science and Technology Agency
    Inventors: Benjamin A. Haskell, Paul T. Fini, Shigemasa Matsuda, Michael D. Craven, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy
    Publication number: 20060008941
    Abstract: Highly planar non-polar a-plane GaN films are grown by hydride vapor phase epitaxy (HVPE).
    Type: Application
    Filed: July 15, 2003
    Publication date: January 12, 2006
    Applicant: BASF Aktiengesellschaft
    Inventors: Benjamin Haskell, Paul Fini, Shigemasa Matsuda, Michael Craven, Steven DenBaars, James Speck, Shuji Nakamura