Abstract: In a semiconductor device, two series connections are arranged to be connected between respective split emitter electrodes and a gate electrode with Zener diode units connected in series to respective resistors, with the cathode sides thereof directed to the gate electrode side. The numbers of the Zener diodes in the Zener diode units in the respective series connections are different between the respective Zener diode units. Thus, a semiconductor device can be provided which is capable of detecting an open failure of a bonding wire regardless of the number of a plurality of the bonding wires connected in parallel, by a simple electrical test to make it possible to reliably sort out a semiconductor device with a wire open failure at an early stage.

Abstract: Aspects of the invention can include a semiconductor device that includes an output stage IGBT and a Zener diode on the same semiconductor substrate. The IGBT can include a first p well layer, an n emitter region on the surface region of the first p well layer, a gate electrode deposited on a gate insulating film, and an emitter electrode on the emitter region. The Zener diode can include a p+ layer formed in the surface region of a second p well layer in the place different from the first p well layer and has a higher concentration than the second p well layer, an anode electrode in ohmic contact with the surface of the p+ layer, an n? layer having a lower concentration than the second p well layer, and a cathode electrode in Schottky contact with the surface of the n? layer.

Abstract: A semiconductor device for ignition performing a current control function and a self shut down function can include a pulse generating circuit, a switching circuit, and a current source circuit, the three circuits together generating a pulse current that discharges a capacitor in the self shut down process. This construction can serve to suppress oscillation of a collector current Ic of the output stage IGBT in the operating processes of the current control circuit and the self shut down circuit, thus preventing or minimizing the likelihood of the ignition plug from erroneous ignition. In addition, the discharge of the capacitor in a pulsed mode can allow for down-sizing of the capacitor, which can contribute to minimization of the semiconductor device.

Abstract: An ignitor semiconductor apparatus can include an output stage IGBT that controls the ON and OFF of the primary current of ignition coil, a sensing IGBT and a sensing resistance for detecting the current flowing through output stage IGBT, gate resistance and a current control circuit that detects the voltage across sensing resistance and controls the current flowing through output stage IGBT. First and second gate control circuits separately control the gate voltages of IGBT's such that the gate voltage of the output stage IGBT is higher than the gate voltage of the sensing IGBT, when the current flowing through output stage IGBT is larger than a predetermined current value, and such that the gate voltage of output stage IGBT is lower than the gate voltage of sensing IGBT, when the current flowing through output stage IGBT is smaller than the predetermined current value.

Abstract: Aspects of the invention are directed to an ignition semiconductor device that includes an output IGBT for ON-OFF control of a primary current in an ignition coil and a current control circuit for controlling a magnitude of the primary current in the ignition coil, the current control circuit being operated by the voltage between the gate terminal and the emitter terminal. The current control circuit can include a sense IGBT, a sense resistance, a gate resistance, a reference voltage, level shift circuits, a self shut down signal generator, a self shut down circuit, an operational amplifier, a MOSFET, a gate voltage control circuit , a pulse generation circuit, and a switching circuit. The self shut down signal generator, on detecting an abnormal state, can deliver a self shut down signal and the pulse generation circuit can generate a pulse signal to short-circuit the switching circuit.

Abstract: An ignitor semiconductor apparatus can include an output stage IGBT that controls the ON and OFF of the primary current of ignition coil, a sensing IGBT and a sensing resistance for detecting the current flowing through output stage IGBT, gate resistance and a current control circuit that detects the voltage across sensing resistance and controls the current flowing through output stage IGBT. First and second gate control circuits separately control the gate voltages of IGBT's such that the gate voltage of the output stage IGBT is higher than the gate voltage of the sensing IGBT, when the current flowing through output stage IGBT is larger than a predetermined current value, and such that the gate voltage of output stage IGBT is lower than the gate voltage of sensing IGBT, when the current flowing through output stage IGBT is smaller than the predetermined current value.

Abstract: A coil failure detection circuit detects a rise of a collector current of an IGBT and a timer circuit measures the length of a rise period. If the rise is not a normal one, an electronic control unit judges that a coil failure has occurred. The electronic control unit turns off the IGBT to prevent misfires and stops a flow of fuel gas to a combustion chamber to prevent melting or deterioration of a catalyst.

Abstract: A coil failure detection circuit detects a rise of a collector current of an IGBT and a timer circuit measures the length of a rise period. If the rise is not a normal one, an electronic control unit judges that a coil failure has occurred. The electronic control unit turns off the IGBT to prevent misfires and stops a flow of fuel gas to a combustion chamber to prevent melting or deterioration of a catalyst.

Abstract: A semiconductor amplifier circuit comprises a transimpedance amplifier for amplifying an input signal; a by-pass transistor connected between an input terminal of the transimpedance amplifier and the ground potential; a first resistor, one end of the first resistor being connected to an output terminal of the transimpedance amplifier; a capacitor connected between the other end of the first resistor and the ground potential; a second resistor connected between the other end of the first resistor and the gate of the by-pass transistor via an inverter; and a differential amplifier having a signal input terminal connected to the output terminal of the transimpedance amplifier and a reference-voltage input terminal connected to the other end of the first resistor.

Abstract: A semiconductor amplifier circuit comprises a transimpedance amplifier for amplifying an input signal; a by-pass transistor connected between an input terminal of the transimpedance amplifier and the ground potential; a first resistor, one end of the first resistor being connected to an output terminal of the transimpedance amplifier; a capacitor connected between the other end of the first resistor and the ground potential; a second resistor connected between the other end of the first resistor and the gate of the by-pass transistor via an inverter; and a differential amplifier having a signal input terminal connected to the output terminal of the transimpedance amplifier and a reference-voltage input terminal connected to the other end of the first resistor.

Abstract: In an amplifier circuit 20A, outputs of two transistors 23A and 23B are connected in parallel through a power superimposition circuit 27, one ends of drain bias transmission lines 29A and 29B each having a length of &lgr;/4, where &lgr; denotes a signal wavelength, are connected to the outputs of the transistors 23A and 23B, respectively, the ends of the drain bias transmission lines 29A and 29B are connected not only to the capacitors 30A and 30B for signal grounding but also to one ends of bias supply lines 32A ad 32B, respectively, a jumper 34 is connected between the other ends of the bias supply lines 32A and 32B, and the one end of the bias supply line 32B is connected to a drain bias input terminal DB. The drain bias transmission lines 29A and 29B and the power superimposition circuit 27 are each disposed in the shape folded in one direction, and the bias supply lines 32A and 32B each extend in a straight line along a direction perpendicular to the folded direction.

Abstract: In an amplifier circuit 20A, outputs of two transistors 23A and 23B are connected in parallel through a power superimposition circuit 27, one ends of drain bias transmission lines 29A and 29B each having a length of &lgr;/4, where &lgr; denotes a signal wavelength, are connected to the outputs of the transistors 23A and 23B, respectively, the ends of the drain bias transmission lines 29A and 29B are connected not only to the capacitors 30A and 30B for signal grounding but also to one ends of bias supply lines 32A ad 32B, respectively, a jumper 34 is connected between the other ends of the bias supply lines 32A and 32B, and the one end of the bias supply line 32B is connected to a drain bias input terminal DB. The drain bias transmission lines 29A and 29B and the power superimposition circuit 27 are each disposed in the shape folded in one direction, and the bias supply lines 32A and 32B each extend in a straight line along a direction perpendicular to the folded direction.