Patents by Inventor Shigenori Sugihara

Shigenori Sugihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxial semiconductor wafer and a manufacturing method thereof
    Patent number: 6965149
    Abstract: An epitaxial semiconductor wafer having a wafer substrate made of semiconductor single crystal, an epitaxial layer deposited on a top surface of said wafer substrate and a polysilicon layer deposited on a back surface of said wafer substrate. The semiconductor single crystal is exposed in a region defined within a distance of at least 50 ?m from a ridge line as a center, which is defined as an intersection line between said back surface and a bevel face interconnecting said top surface and said back surface of said wafer substrate. The polysilicon layer is 1.0 to 2.0 ?m thick. The epitaxial layer is 1.0 to 20 ?m thick. The wafer substrate is a silicon single crystal.
    Type: Grant
    Filed: July 8, 2002
    Date of Patent: November 15, 2005
    Assignee: Sumitomo Mitsubishi Silicon Corporation
    Inventors: Shigenori Sugihara, Shigeru Nagafuchi
  • Epitaxial semiconductor wafer and a manufacturing method thereof
    Publication number: 20030010280
    Abstract: An epitaxial semiconductor wafer having a wafer substrate made of semiconductor single crystal, an epitaxial layer deposited on a top surface of said wafer substrate and a polysilicon layer deposited on a back surface of said wafer substrate. The semiconductor single crystal is exposed in a region defined within a distance of at least 50 &mgr;m from a ridge line as a center, which is defined as an intersection line between said back surface and a bevel face interconnecting said top surface and said back surface of said wafer substrate. The polysilicon layer is 1.0 to 2.0 &mgr;m thick. The epitaxial layer is 1.0 to 20 &mgr;m thick. The wafer substrate is a silicon single crystal.
    Type: Application
    Filed: July 8, 2002
    Publication date: January 16, 2003
    Inventors: Shigenori Sugihara, Shigeru Nagafuchi