Abstract: An anodizing device has: a power supply drum that supports, in close contact therewith, a web consisting of an anodizable metal and has a part configured with a conductive material, to which the web is closely attached; a counter electrode provided facing the power supply drum; an electrolysis tank filled with an electrolyte, into which part of the power supply drum and the counter electrode are immersed; a protection member formed of a non-conductive material that protects the lateral direction end portions of the web supported by the power supply drum in close contact therewith and a portion of the power supply drum, to which the web is not closely attached, from the electrolyte; and a driver adapted to make the web and the protection member travel concurrently in the electrolyte in synchronization with the circumferential speed of the power supply drum.

Abstract: The semiconductor device has a conductive substrate formed from a conductive material, a nonconductive layer provided on at least part of the surface of the conductive substrate, plural semiconductor elements provided on this nonconductive layer, wiring that electrically connects the plural semiconductor elements, and at least one electrical connection part between the nonconductive layer and semiconductor elements or wiring. The semiconductor element for which the potential difference with the conductive substrate is the greatest is disposed in a position other than the geometric terminal of the arrangement created by the plural semiconductor elements.

Abstract: An insulating metal substrate is used for a semiconductor device such as a solar cell. The substrate includes a metal base made of steel, iron-based alloy steel or titanium, an aluminum layer and an insulating layer obtained by anodizing aluminum. An alloy layer primarily made of an alloy of a composition expressed by Al3X (where X is at least one kind of element selected from Fe, Cr, and Ti) exists in an interface between the metal base and the aluminum layer, and has a thickness of 0.01 to 10 micrometers. The aluminum layer has a thickness of 1 micrometer or more and equal to or less than a thickness of the metal base.

Abstract: A solar cell of a module type in which thin-film solar cells having a light absorbing layer made of a compound semiconductor are joined in series on a single substrate. The substrate includes a base made of a ferritic stainless steel, an aluminum layer formed on at least one surface of the base, and an insulation layer having a porous structure obtained by anodizing a surface of the aluminum layer. The insulation layer exhibits compressive stress at room temperature.

Abstract: A metal substrate with an insulation layer includes a metal substrate having at least an aluminum base and an insulation layer formed on said aluminum base of said metal substrate. The insulation layer is a porous type anodized film of aluminum. The anodized film includes a barrier layer portion and a porous layer portion, and at least the porous layer portion has compressive strain at room temperature. a magnitude of the strain ranges from 0.005% to 0.25%. The anodized film has a thickness of 3 micrometers to 20 micrometers.

Abstract: A metal substrate with an insulation layer has a metallic substrate having at least an aluminum base, and an insulation layer formed on the aluminum base of the metallic substrate. The insulation layer is a anodized film of aluminum that has a porous structure having plural pores and a Martens hardness of 1000 N/mm2 to 3500 N/mm2. A ratio of an average pore size of the plural pores to an average wall thickness of the plural pores ranges from 0.2 to 0.5.

Abstract: A substrate for selenium compound semiconductor has at least a steel base and an aluminum base. The aluminum base is arranged on one end in a direction of lamination of the steel base and the aluminum base, the steel base is arranged on the other end in the direction. An alloy layer having a thickness of from 0.01 ?m to 10 ?m is formed between the steel base and the aluminum base. A thermal oxide film having a thickness of 6 nm or more is formed on a surface of the steel base opposite to the aluminum base.