Abstract: The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recesses 106 are formed by etching in the first electrically conductive (n) type semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess.

Abstract: An image forming apparatus, includes an image bearing member having an endless belt shape, on which a toner image is formed, and the image bearing member, a drive roller, which rotates the image bearing member laid around the drive roller, a drive gear, which is connected to the drive roller, and a drive transmitting gear, which is engaged with the drive gear, and transmits a driving force to the drive gear to rotate the image bearing member. The drive transmitting gear is arranged so that a direction of a drive reaction force of the drive transmitting gear with respect to the drive gear substantially coincides with an ingress direction of the image bearing member toward the drive roller.

Abstract: The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other.

Abstract: A transfer device includes a pair of transfer frames, a belt member, a pair of transfer roller levers which are respectively arranged on inner sides of the transfer frames pivotably, a transfer roller which is provided between first ends of the transfer roller levers rotatably, a pair of first urging members, which are respectively provided on second ends of the transfer roller levers to energize the transfer roller toward the belt member, and a pair of transfer pressure controlling members which are respectively provided on the transfer frames movably to control urging power of the first urging members.

Abstract: A belt member is seamed to form an endless belt which is stretched by a plurality of roller members and circulated in a first direction. The belt member is provided with an electrode portion at a first end portion thereof in a second direction perpendicular to the first direction. A cleaning member is abutted against the belt member. A seam of the belt member extends obliquely relative to the first direction such that an end of the seam confronting the electrode portion is situated in an upstream side of the first direction.

Abstract: This invention relates to a method and apparatus for making a spark plug, in particular, for making a high-performance spark plug having a center electrode having a firing end made of Pt, Ir, Rh, Pd, Re, Os, Ru or alloy thereof, with its firing end diameter of about 0.3-1.0 mm. One of the embodiments provides a method comprising the steps of: extending a metal strip from an end of the metal shell; positioning a spacer above a firing end of the center electrode; preliminarily bending the metal strip toward the spacer so as to form an arc portion in the metal strip; and then precisely forming a gap-distance between the metal strip and the firing end of the center electrode by applying a force to the metal strip.

Abstract: A CPU 111 drives an intermediate transfer belt at a first speed in a normal mode, but drives the intermediate transfer belt at the first speed in a low speed mode at least until the end of forming a toner image performed by a developer part 20, reduces the speed from the first speed to a second speed after the end of forming the toner image and then maintains the second speed at least until the end of secondary transfer. In the intermediate transfer belt, there are a transfer area, in which primary transfer of a toner image is possible, and a transfer protection area in which primary transfer of a toner image is prohibited and which is provided along a direction of rotation axis. In the low speed mode, the CPU 111 controls image forming so that a toner image will be primarily transferred onto such a portion of the transfer area which is close to the transfer protection area and on the upstream side of the intermediate transfer medium along a direction of rotational driving.

Abstract: According to the present invention, first, a white LED with high color rendering property is realized. In addition, a general object of the present invention is to provide a highly practical light emitting device wherein a rare earth complex is utilized as a wavelength conversion light emitting device of a high efficiency. Such an object is achieved by providing a combined light emitting device wherein a specific complex having a rare earth ion, particularly an Eu (europium) ion, as the central ion, is borne by a transparent solid matrix such as polymer or plastic, and this rare earth complex is excited by an InGaN based blue light emitting diode or by a semiconductor laser utilizing a light emitting layer of InGaN based material. A combination of such a blue light emitting diode, a YAG yellow fluorescent material and such an Eu complex for red light allows for the formation of a white light source with high color rendering property.

Abstract: The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other.

Abstract: A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

Abstract: The invention provides novel compounds which show high sensitivity to near-infrared rays in the region of 750-950 nm and, when processed to give films and so forth, undergo only slight discoloration and retain high transparency, hence can be used as near-infrared absorbing materials, together with an intermediate thereof. Thus provided are polymethine compounds of the general formula (I): wherein R1 and R2 each independently represents a hydrogen atom, an alkyl group or an alkoxy group, R3 represents an alkyl group, which may optionally be substituted, L represents an alkylene group necessary for the formation of a cyclic structure, X represents a hydrogen atom, a halogen atom or a substituted amino group, and Z represents an acidic residue, as well as near-infrared absorbing materials comprising the same.

Abstract: A method for making a spark plug is provided. The method comprises the steps of, for adjustment of a spark gap, provisionally pressing a ground electrode toward a leading end surface of a center electrode and thereby decreasing the spark gap to a predetermined value larger than a final target gap gt, after the step of provisionally pressing the ground electrode, performing an adjustment bending process for eliminating an eccentricity &dgr; of the ground electrode in the widthwise direction thereof with respect to a target position, after the step of performing the adjustment bending process, measuring a spark gap g1 and measuring a difference (g1−gt) between the measured spark gap g1 and the final target gap gt, and pressing the ground electrode toward the center electrode when the difference (g1−gt) is positive. An apparatus for carrying out the method is also provided.

Abstract: The invention provides novel compounds which show high sensitivity to near-infrared rays in the region of 750-950 nm and, when processed to give films and so forth, undergo only slight discoloration and retain high transparency, hence can be used as near-infrared absorbing materials, together with an intermediate thereof.

Abstract: A CPU 111 drives an intermediate transfer belt at a first speed in a normal mode, but drives the intermediate transfer belt at the first speed in a low speed mode at least until the end of forming a toner image performed by a developer part 20, reduces the speed from the first speed to a second speed after the end of forming the toner image and then maintains the second speed at least until the end of secondary transfer. In the intermediate transfer belt, there are a transfer area, in which primary transfer of a toner image is possible, and a transfer protection area in which primary transfer of a toner image is prohibited and which is provided along a direction of rotation axis. In the low speed mode, the CPU 111 controls image forming so that a toner image will be primarily transferred onto such a portion of the transfer area which is close to the transfer protection area and on the upstream side of the intermediate transfer medium along a direction of rotational driving.

Abstract: A gazing point illuminating device is provided with: a light source; a direction changing mechanism for changing the lighting direction of the light source; a gazing direction detector for detecting the direction of the user's gazing line; and a controller for changing the lighting direction corresponding to the detected gazing direction. When, LEDs are used as the light source, and the light source is attached to the goggles worn by a user, the goggles can be useful gazing point illuminating device by themselves even if they do not include gazing point or direction detectors, because a person normally look straight ahead except for unusual occasions where he/she purposefully avert his/her gaze. Thus, an illuminating device fixed to a person's head for lighting forward is a gazing point illuminating device. It is preferred to provide an LED panel at the left and right ends of goggles.

Abstract: The invention relates to a novel phthalocyanine compound which absorbs in a near-infrared region of 700˜1000 nm with little absorption in the visible region of the spectrum and can be applied with advantage to a near-infrared light-absorbing filter for plasma display, a secret ink and other applications and to a process for producing the phthalocyanine compound. The above phthalocyanine compound has the following general formula (I). A near-infrared light-absorbing material containing the same is also provided.

Abstract: The invention provides a near-infrared absorbing material showing a high sensitivity to a YAG laser having an emission wavelength of 900˜1100 nm as well as a high photothermal conversion efficiency, an original plate for direct printing plate making which utilizes the near-infrared absorbing material, and a novel polymethine compound represented by the following general formula (1), of which the above near-infrared absorbing material is comprised.

Abstract: A welding apparatus provided with lower electrode portions, upper electrode portions, and a cooling water circulation duct which circulates and supplies cooling water to welding electrode pressurizing cylinder guns on the upper electrode portions. A check valve is disposed on an upstream side to the cylinder guns in the cooling water circulation duct. Further, a booster is disposed on a downstream side to the cylinder guns in the cooling water circulation duct, and the cylinder guns are extended for welding by pressurizing the cooling water in the duct from the booster to the check valve through the cylinder guns.

Abstract: The invention provides near infrared absorbing materials showing high light-to-heat conversion efficiency and high sensitivity to lasers whose emission bands are within the range of 750 nm to 900 nm, original plates for direct printing plate making, and novel compounds which can be applied to such absorbing materials and plates. The compounds are polymethine compounds of the general formula (I) A detailed description of general formula (I) may be found in the specification. wherein R1 represents an alkoxy group which may be substituted; R2 represents an alkyl group which may be substituted; R3 and R4 each represents a lower alkyl group or R3 and R4 taken together represent a ring; X represents a hydrogen atom, a halogen atom or a substituted amino group; Y represents an alkoxy group which may be substituted or an alkyl group which may be substituted; Z represents a charge neutralizing ion.

Abstract: In an attachment structure of a bumper beam of the present invention, in which a bumper stay is attached to the end portion of each of rear side frames of an automobile and a bumper beam 23 is attached to the bumper stays, each of the bumper stays 22 is formed as a combined unit formed by an impact absorbing member 26 which is deformed to absorb impact when the impact force is applied to the bumper beam 23 and a holding member 25 having rigidity larger than the impact absorbing member 26, the holding members 25 are attached to the end portions 21, 21 of the rear side frames 17, 17, the holding member 25 is combined with the impact absorbing member 26, and the bumper beam 23 is attached to the impact absorbing members 26.