Patents by Inventor Shigeo Irie
Shigeo Irie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11073756Abstract: A photomask blank is provided comprising a transparent substrate, a first film of chromium-containing material on the substrate, and a second film of silicon/oxygen-containing material disposed contiguous to the first film. The second film includes a first layer contiguous to the first film and a second layer spaced apart from the first layer in film thickness direction. The oxygen content of the first layer is lower than the oxygen content of the second layer. During etching of the first film, this setting prevents an etching rate from ramping up at the interface between the first and second films.Type: GrantFiled: July 12, 2018Date of Patent: July 27, 2021Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takuro Kosaka, Hideo Kaneko, Shigeo Irie, Naoki Kawaura
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Patent number: 11061319Abstract: A photomask blank is processed into a transmissive photomask for use in photolithography for forming a pattern on a recipient using exposure light. The photomask blank comprises a transparent substrate, a first film of a material which is etchable by chlorine/oxygen-based dry etching, and a second film of a silicon-containing material. The second film includes a layer having a refractive index n of at least 1.6 or an extinction coefficient k of at least 0.3 with respect to the wavelength of inspection light which is longer than the exposure light.Type: GrantFiled: June 4, 2018Date of Patent: July 13, 2021Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takuro Kosaka, Tsuneo Terasawa, Shigeo Irie, Takahiro Kishita
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Patent number: 10585345Abstract: A photomask blank (1) having: a transparent substrate (10); a first film (11) etched by chlorine/oxygen-based dry etching and made of a material having resistance against fluorine-based dry etching; and a second film (12) formed adjacent to the first film and made of a material which comprises silicon and oxygen or silicon, oxygen, and nitrogen and has an Si—Si bond and which is substantially not etched by chlorine/oxygen-based dry etching, wherein: the photoresist adhesive performance is improved; the resist pattern is stably maintained without degrading, collapsing, or peeling even when a fine resist pattern is formed from a photoresist film; and an excellent shape and dimensional accuracy is obtained in regard to etching of a lower layer film in which the resist pattern is used.Type: GrantFiled: February 15, 2016Date of Patent: March 10, 2020Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shigeo Irie, Takashi Yoshii, Keiichi Masunaga, Yukio Inazuki, Hideo Kaneko, Toyohisa Sakurada
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Publication number: 20190033703Abstract: A photomask blank is provided comprising a transparent substrate, a first film of chromium-containing material on the substrate, and a second film of silicon/oxygen-containing material disposed contiguous to the first film. The second film includes a first layer contiguous to the first film and a second layer spaced apart from the first layer in film thickness direction. The oxygen content of the first layer is lower than the oxygen content of the second layer. During etching of the first film, this setting prevents an etching rate from ramping up at the interface between the first and second films.Type: ApplicationFiled: July 12, 2018Publication date: January 31, 2019Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Takuro KOSAKA, Hideo KANEKO, Shigeo IRIE, Naoki KAWAURA
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Publication number: 20180356721Abstract: A photomask blank is processed into a transmissive photomask for use in photolithography for forming a pattern on a recipient using exposure light. The photomask blank comprises a transparent substrate, a first film of a material which is etchable by chlorine/oxygen-based dry etching, and a second film of a silicon-containing material. The second film includes a layer having a refractive index n of at least 1.6 or an extinction coefficient k of at least 0.3 with respect to the wavelength of inspection light which is longer than the exposure light.Type: ApplicationFiled: June 4, 2018Publication date: December 13, 2018Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Takuro KOSAKA, Tsuneo TERASAWA, Shigeo IRIE, Takahiro KISHITA
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Publication number: 20180267398Abstract: A photomask blank (1) having: a transparent substrate (10); a first film (11) etched by chlorine/oxygen-based dry etching and made of a material having resistance against fluorine-based dry etching; and a second film (12) formed adjacent to the first film and made of a material which comprises silicon and oxygen or silicon, oxygen, and nitrogen and has an Si—Si bond and which is substantially not etched by chlorine/oxygen-based dry etching, wherein: the photoresist adhesive performance is improved; the resist pattern is stably maintained without degrading, collapsing, or peeling even when a fine resist pattern is formed from a photoresist film; and an excellent shape and dimensional accuracy is obtained in regard to etching of a lower layer film in which the resist pattern is used.Type: ApplicationFiled: February 15, 2016Publication date: September 20, 2018Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shigeo IRIE, Takashi YOSHII, Keiichi MASUNAGA, Yukio INAZUKI, Hideo KANEKO, Toyohisa SAKURADA
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Patent number: 9291889Abstract: An opening width of a main pattern is a width with which a transcription pattern is formed on a target member to be exposed by transmitted exposure light, and is a dimension of 0.8×(?/NA)×M or less (where ? is a wavelength of the exposure light, and NA and M are a numerical aperture and a reduction ratio of a reduced projection optical system of an exposure apparatus). Each of a first auxiliary pattern adjacent to the main pattern and a second auxiliary pattern located outside the first auxiliary pattern to be adjacent thereto has a width with which a transcription pattern is not formed by the exposure light and generates diffracted light. A first distance between respective centers of the main pattern and the first auxiliary pattern is greater than a second distance between respective centers of the first auxiliary pattern and the second auxiliary pattern.Type: GrantFiled: June 26, 2014Date of Patent: March 22, 2016Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Yoshimasa Yoshioka, Akio Misaka, Shigeo Irie, Hiroshi Sakaue, Masaru Sasago
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Publication number: 20140308604Abstract: An opening width of a main pattern is a width with which a transcription pattern is formed on a target member to be exposed by transmitted exposure light, and is a dimension of 0.8×(?/NA)×M or less (where ? is a wavelength of the exposure light, and NA and M are a numerical aperture and a reduction ratio of a reduced projection optical system of an exposure apparatus). Each of a first auxiliary pattern adjacent to the main pattern and a second auxiliary pattern located outside the first auxiliary pattern to be adjacent thereto has a width with which a transcription pattern is not formed by the exposure light and generates diffracted light. A first distance between respective centers of the main pattern and the first auxiliary pattern is greater than a second distance between respective centers of the first auxiliary pattern and the second auxiliary pattern.Type: ApplicationFiled: June 26, 2014Publication date: October 16, 2014Inventors: Yoshimasa YOSHIOKA, Akio MISAKA, Shigeo IRIE, Hiroshi SAKAUE, Masaru SASAGO
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Patent number: 8278014Abstract: A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.Type: GrantFiled: July 7, 2011Date of Patent: October 2, 2012Assignee: Panasonic CorporationInventors: Shigeo Irie, Akio Misaka, Yuji Nonami, Tetsuya Nakamura, Chika Harada
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Publication number: 20110287344Abstract: A reflective photomask includes a phase shift portion, a reflective portion located outside the phase shift portion; and a semi-light-absorbing portion located between the phase shift portion and the reflective portion. The semi-light-absorbing portion includes a first multilayer film reflective to exposure light, a first interlayer film, a second multilayer film, a second interlayer film, and a third multilayer film. The phase shift portion is the first multilayer film exposed from the third multilayer film, the second interlayer film, the second multilayer film, the first interlayer film. The reflective portion is the second multilayer film exposed from the third multilayer film and the second interlayer film.Type: ApplicationFiled: February 17, 2011Publication date: November 24, 2011Inventor: Shigeo IRIE
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Publication number: 20110262849Abstract: A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.Type: ApplicationFiled: July 7, 2011Publication date: October 27, 2011Applicant: Panasonic CorporationInventors: Shigeo IRIE, Akio Misaka, Yuji Nonami, Tetsuya Nakamura, Chika Harada
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Patent number: 8007959Abstract: A photomask includes a transparent substrate having a transparent property against exposing light and a halftone portion formed on the transparent substrate. In the halftone portion, a first opening having a first dimension and a second opening having a second dimension larger than the first dimension are formed. A light-shielding portion is formed on the transparent substrate to be disposed around the second opening.Type: GrantFiled: July 29, 2008Date of Patent: August 30, 2011Assignee: Panasonic CorporationInventors: Yuji Nonami, Akio Misaka, Shigeo Irie
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Patent number: 7998641Abstract: A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.Type: GrantFiled: August 28, 2008Date of Patent: August 16, 2011Assignee: Panasonic CorporationInventors: Shigeo Irie, Akio Misaka, Yuji Nonami, Tetsuya Nakamura, Chika Harada
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Publication number: 20090061330Abstract: A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.Type: ApplicationFiled: August 28, 2008Publication date: March 5, 2009Inventors: Shigeo Irie, Akio Misaka, Yuji Nonami, Tetsuya Nakamura, Chika Harada
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Publication number: 20090061328Abstract: A photomask includes a transparent substrate having a transparent property against exposing light and a halftone portion formed on the transparent substrate. In the halftone portion, a first opening having a first dimension and a second opening having a second dimension larger than the first dimension are formed. A light-shielding portion is formed on the transparent substrate to be disposed around the second opening.Type: ApplicationFiled: July 29, 2008Publication date: March 5, 2009Inventors: Yuji NONAMI, Akio Misaka, Shigeo Irie
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Patent number: 6984472Abstract: An unwanted deposited film is removed from the surface of a photomask in which a desired pattern has been formed. Then, a resist film is exposed to extreme ultraviolet radiation through the photomask, from which the deposited film has been removed, thereby transferring the desired pattern onto the resist film.Type: GrantFiled: June 26, 2001Date of Patent: January 10, 2006Assignee: Matsushita Electric Industrial Co., Ltd.Inventor: Shigeo Irie
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Patent number: 6966710Abstract: A resist film is formed out of a resist material on a substrate, and then pre-baked. Next, the pre-baked resist film is exposed to extreme ultraviolet radiation through a photomask. Then, the exposed resist film is developed, thereby defining a resist pattern on the substrate. The pre-baking and exposing steps are carried out in a vacuum without subjecting the resist film to the air.Type: GrantFiled: May 18, 2004Date of Patent: November 22, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventor: Shigeo Irie
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Patent number: 6855485Abstract: A resist film is formed out of a resist material on a substrate, and then pre-baked. Next, the pre-baked resist film is exposed to extreme ultraviolet radiation through a photomask. Then, the exposed resist film is developed, thereby defining a resist pattern on the substrate. The pre-baking and exposing steps are carried out in a vacuum without subjecting the resist film to the air.Type: GrantFiled: June 26, 2001Date of Patent: February 15, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventor: Shigeo Irie
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Publication number: 20040213563Abstract: A resist film is formed out of a resist material on a substrate, and then pre-baked. Next, the pre-baked resist film is exposed to extreme ultraviolet radiation through a photomask. Then, the exposed resist film is developed, thereby defining a resist pattern on the substrate. The pre-baking and exposing steps are carried out in a vacuum without subjecting the resist film to the air.Type: ApplicationFiled: May 18, 2004Publication date: October 28, 2004Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventor: Shigeo Irie
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Publication number: 20040196446Abstract: An unwanted deposited film is removed from the surface of a photomask in which a desired pattern has been formed. Then, a resist film is exposed to extreme ultraviolet radiation through the photomask, from which the deposited film has been removed, thereby transferring the desired pattern onto the resist film.Type: ApplicationFiled: April 19, 2004Publication date: October 7, 2004Applicant: Matsushita Electric Industrial Co., Ltd.Inventor: Shigeo Irie