Publication number: 20090039775
Abstract: A conductive multilayer stack (10) which includes: a first layer (12) formed of a metal or transparent conductive material, and a second layer (14) provided on the first layer (12), which is formed of an oxide, carbide or nitride of at least one metal selected from the group consisting of indium, tin, zinc, aluminum, magnesium, silicon, titanium, vanadium, manganese, cobalt, nickel, copper, gallium, germanium, yttrium, zirconia, niobium, molybdenum, antimony, barium, hafnium, tantalum, tungsten, bismuth, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium and ytterbium, or carbon, wherein the second layer (14) has a work function larger than that of the first layer (12), and the second layer (14) had a film thickness of at least 0.5 nm and smaller than 50 nm.
Type:
Application
Filed:
August 15, 2006
Publication date:
February 12, 2009
Applicant:
Idemitsu Kosan Co., Ltd.
Inventors:
Shigekazu Tomai, Kazuyoshi Inoue, Shigeo Matsuzaki