Patents by Inventor Shigeo Yasuhara

Shigeo Yasuhara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cyclopentadienyl nickel complex compound
    Patent number: 11332487
    Abstract: A cyclopentadienyl nickel complex compound represented by a formula (I): Ni(R1nC5H5-n)2 (I), where R1 is each independently a C1-4 alkyl group, and n is 2, 3, or 4.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: May 17, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Yasuo Fujii, Shigeo Yasuhara
  • CYCLOPENTADIENYL NICKEL COMPLEX COMPOUND
    Publication number: 20200216482
    Abstract: A cyclopentadienyl nickel complex compound represented by a formula (I): Ni(R1nC5H5-n)2 (I), where R1 is each independently a C1-4 alkyl group, and n is 2, 3, or 4.
    Type: Application
    Filed: March 16, 2020
    Publication date: July 9, 2020
    Inventors: Yasuo Fujii, Shigeo Yasuhara
  • Low dielectric constant insulating film and method for forming the same
    Patent number: 8828886
    Abstract: Disclosed is a low dielectric constant insulating film formed of a polymer containing Si atoms, O atoms, C atoms, and H atoms, which includes straight chain molecules in which a plurality of basic molecules with an SiO structure are linked in a straight chain, binder molecules with an SiO structure linking a plurality of the straight chain molecules. The area ratio of a signal indicating a linear type SiO structure is 49% or more, and the signal amount of the signal indicating Si(CH3) is 66% or more.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: September 9, 2014
    Assignee: Tohoku University
    Inventors: Seiji Samukawa, Shigeo Yasuhara, Shingo Kadomura, Tsutomu Shimayama, Hisashi Yano, Kunitoshi Tajima, Noriaki Matsunaga, Masaki Yoshimaru
  • LOW DIELECTRIC CONSTANT INSULATING FILM AND METHOD FOR FORMING THE SAME
    Publication number: 20120190212
    Abstract: Disclosed is a low dielectric constant insulating film formed of a polymer containing Si atoms, O atoms, C atoms, and H atoms, which includes straight chain molecules in which a plurality of basic molecules with an SiO structure are linked in a straight chain, binder molecules with an SiO structure linking a plurality of the straight chain molecules. The area ratio of a signal indicating a linear type SiO structure is 49% or more, and the signal amount of the signal indicating Si(CH3) is 66% or more.
    Type: Application
    Filed: April 5, 2012
    Publication date: July 26, 2012
    Inventors: Seiji SAMUKAWA, Shigeo Yasuhara, Shingo Kadomura, Tsutomu Shimayama, Hisashi Yano, Kunitoshi Tajima, Noriaki Matsunaga, Masaki Yoshimaru