Abstract: An electron microscope according to the present invention includes: a backscattered electron detector provided with a backscattered electron detecting element (9); a low-vacuum secondary electron detector provided with a bias electrode (11) and a specimen stage (12); and a signal switch (14) that switches signals detected by the detectors. Optimal observation conditions are stored in an observation condition memory (20) for each of the detectors. A CPU (19) calls observation conditions stored in the observation condition memory (20) on the basis of the switching of the detectors, and sets conditions of the electron microscope to the called observation conditions. An image processing device (22) converts a plurality of the detected signals obtained on the basis of the switching of the detectors into two-dimensional image signals and evaluates the qualities of images of the two-dimensional image signals.

Abstract: A control device (50) for a charged particle beam device (100) tilts the irradiation axis of a primary electron beam (4) to the left, straight, or to the right via tilting coils (11, 12) each time the primary electron beam (4) scans the surface of a sample (15) over a single scanning line. When the irradiation axis is changed, the focal point of the primary electron beam (4) is adjusted by a focal point-adjusting coil (14) based on the tilt of the irradiation axis in order to take a left-tilted observation image, a non-tilted observation image or a right-tilted observation image of the surface of a sample (15) for each scanning line. The left-tilted observation images, non-tilted observation images and right-tilted observation images for the scanning lines obtained up to this point are simultaneously displayed on the same display device (31). In this way, focused non-tilted observation images and focused tilted observation images can be taken and displayed nearly simultaneously.

Abstract: A charged particle beam device of the present invention has a signal processing function of acquiring a secondary signal obtained when a charged particle beam is caused to scan at a low speed not subjected to a band limitation of an electrical signal path, and a secondary signal obtained when a charged particle beam is caused to scan at a high speed subjected to the band limitation of the electrical signal path, calculating a degradation function (H?1(s)) between the plurality of secondary signals, and using an inverse function thereof as a correction filter; and a function of updating a parameter of the correction filter to an optimal value as needed or at given timing. Accordingly, the charged particle beam device can perform optimum image restoration even when a detector or an amplifier circuit that constitutes the electrical signal path degrades with time.

Abstract: According to the present invention, in a charged particle beam device having a charged particle source, an objective lens for focusing a primary-charged particle beam emitted from the charged particle source, a scan deflector for scanning the primary-charged particle beam on a sample, and a detector for detecting signal particles generated from the sample under scanning of the primary-charged particle beam, whereby a sample image is obtained by using the signal particles of the detector, the charged particle beam device comprises a deflector for deflecting an angle of irradiation of the primary-charged particle beam onto the sample, first and second independent power supplies for passing currents to the deflector, and a switch for switching over voltages applied from the two power supplies in unit of one line or one frame of scanning of the primary-charged particle beam.

Abstract: A charged particle beam device of the present invention has a signal processing function of acquiring a secondary signal obtained when a charged particle beam is caused to scan at a low speed not subjected to a band limitation of an electrical signal path, and a secondary signal obtained when a charged particle beam is caused to scan at a high speed subjected to the band limitation of the electrical signal path, calculating a degradation function (H?1(s)) between the plurality of secondary signals, and using an inverse function thereof as a correction filter; and a function of updating a parameter of the correction filter to an optimal value as needed or at given timing. Accordingly, the charged particle beam device can perform optimum image restoration even when a detector or an amplifier circuit that constitutes the electrical signal path degrades with time.

Abstract: A signal processing unit (21) of a charged particle microscope calculates a degradation function (H (s)) of an image, on the basis of detection signals (11) obtained by scanning a charged particle beam (2) at two types of scanning speeds, a scanning speed within the bandwidths of a detector (12) and an amplifying circuit at a subsequent stage of the detector, and another scanning speed exceeding the upper limit of the bandwidths. Then, the signal processing unit creates a one-dimensional correction filter for recovering image quality, from an inverse function (H?1 (s)) of the degradation function, and applies the one-dimensional correction filter to the detection signal recorded at the scanning speed exceeding the upper limit of the bandwidths of the detector and the amplifying circuit at a subsequent stage of the detector, or to a two-dimensional image based on the detection signal.

Abstract: According to the present invention, in a charged particle beam device having a charged particle source, an objective lens for focusing a primary-charged particle beam emitted from the charged particle source, a scan deflector for scanning the primary-charged particle beam on a sample, and a detector for detecting signal particles generated from the sample under scanning of the primary-charged particle beam, whereby a sample image is obtained by using the signal particles of the detector, the charged particle beam device comprises a deflector for deflecting an angle of irradiation of the primary-charged particle beam onto the sample, first and second independent power supplies for passing currents to the deflector, and a switch for switching over voltages applied from the two power supplies in unit of one line or one frame of scanning of the primary-charged particle beam.

Abstract: A charged particle beam impinging on a specimen is set to have left and right tilt angles corresponding to a parallactic angle. A control unit is provided which scans the beam over the specimen while giving a left tilt and a right tilt corresponding to the parallactic angle alternately to the beam on each scanning line. In this way, images are acquired. A three-dimensional image in which deterioration of the resolution is suppressed is displayed in real time by combining aberration cancellation means with the control of the beam according to the parallactic angle. The aberration cancellation means uses an optical system having plural stages of lenses to provide overall cancellation of aberrations by making use of the action of a lens to deflect the beam back to the optical axis.

Abstract: An electron microscope according to the present invention includes: a backscattered electron detector provided with a backscattered electron detecting element (9); a low-vacuum secondary electron detector provided with a bias electrode (11) and a specimen stage (12); and a signal switch (14) that switches signals detected by the detectors. Optimal observation conditions are stored in an observation condition memory (20) for each of the detectors. A CPU (19) calls observation conditions stored in the observation condition memory (20) on the basis of the switching of the detectors, and sets conditions of the electron microscope to the called observation conditions. An image processing device (22) converts a plurality of the detected signals obtained on the basis of the switching of the detectors into two-dimensional image signals and evaluates the qualities of images of the two-dimensional image signals.

Abstract: In three-dimensional shape measurement, a backscattered electron detection signal and selection signal generator in a control section controls, by selection signal, a signal switching section and a frame memory so that: detection signals from respective semiconductor elements are sequentially switched in the signal switching section in synchronization with a scanning frame of an electron beam on a sample; and the detection signals from the respective semiconductor elements can be sequentially recorded in recording addresses in the frame memory which correspond to the respective semiconductor elements. After four electron beam scanning sessions, each image data for three-dimensional shape measurement is recorded in the frame memory, and processed in a computing processing section for three-dimensional shape measurement, and the result can be displayed in a display section.

Abstract: A charged particle beam impinging on a specimen is set to have left and right tilt angles corresponding to a parallactic angle. A control unit is provided which scans the beam over the specimen while giving a left tilt and a right tilt corresponding to the parallactic angle alternately to the beam on each scanning line. In this way, images are acquired. A three-dimensional image in which deterioration of the resolution is suppressed is displayed in real time by combining aberration cancellation means with the control of the beam according to the parallactic angle. The aberration cancellation means uses an optical system having plural stages of lenses to provide overall cancellation of aberrations by making use of the action of a lens to deflect the beam back to the optical axis.

Abstract: In three-dimensional shape measurement, a backscattered electron detection signal and selection signal generator in a control section controls, by selection signal, a signal switching section and a frame memory so that: detection signals from respective semiconductor elements are sequentially switched in the signal switching section in synchronization with a scanning frame of an electron beam on a sample; and the detection signals from the respective semiconductor elements can be sequentially recorded in recording addresses in the frame memory which correspond to the respective semiconductor elements. After four electron beam scanning sessions, each image data for three-dimensional shape measurement is recorded in the frame memory, and processed in a computing processing section for three-dimensional shape measurement, and the result can be displayed in a display section.

Abstract: In an electron microscope for observing an image of a sample using secondary electrons emitted from the sample by two-dimensionally scanning an electron beam on the sample, a low magnification and wide view image of the sample is formed on one frame memory. The frame memory for storing on picture of the image is divided into an appropriate number of areas. The image data of the sample, obtained by consecutively moving the sample to the sample areas, is stored to the corresponding areas of the frame memory.

Abstract: The present invention discloses an image processing device for an electron microscope intending to improve the image quality by subjecting image data D.sub.t to interframe integration, comprising means for detecting at least either one of variations of said image data D.sub.t in 1 frame unit and modifications in the observation condition of the electron microscope; a frame memory storing image data .intg.D.sub.t after the integration subjected to the interframe integration; integrating means for executing the interframe integration with a degree of integration corresponding to at least either one of the variations and the modifications between the image data D.sub.t and the image data .intg.D.sub.t after the integration and storing the image data after the integration in the frame memory as new image data .intg.D.sub.t after the integration; and means for displaying the image data .intg.D.sub.t after the integration as an observed image.

Abstract: In a semiconductor switch for use in a telephone exchange, interference between separate switching units located on a single chip is frequently a problem. To overcome this, a semiconductor switch is provided with a plurality of islands of silicon monocrystal disposed in a supporting body of silicon polycrystal through a dielectric film having a plurality of switching circuit islands, at least one driving circuit island, and a plurality of protective circuit islands, wherein a region to reduce parasitic capacitance is formed between said switching circuit islands by arranging the switching circuit islands to be isolated from one another through said region.