Abstract: A polishing composition having silica-based abrasive grains and a polishing method. A polishing composition having silica particles, wherein on the basis of a colloidal silica dispersion of the silica particles, the dispersion has an Rsp of 0.15 to 0.7 as measured using pulse NMR, and the colloidal silica particles have a shape coefficient SF1 of 1.20 to 1.80, wherein Rsp is calculated based on equation (1): Rsp=(Rav?Rb)/(Rb)??(1) (wherein Rsp is an index that indicates water affinity; Rav is an inverse of a relaxation time of the colloidal silica dispersion; and Rb is an inverse of a relaxation time of a blank aqueous solution obtained by removing the silica particles from the colloidal silica dispersion), and the shape coefficient SF1 is calculated based on equation (2): SF1=(area of a circle whose diameter is a maximum diameter of the particle)/(projected area)??(2).

Abstract: A polishing composition that is for use in CMP polishing and that makes it possible to minimize the occurrence of defects. A polishing composition comprising silica particles, a basic nitrogen-containing organic compound, and water serving as a solvent, wherein the composition exhibits an Rsp value of the following Formula (1) of more than 0.7 and 6 or less as calculated from values measured by pulse NMR: Rsp=(Rav?Rb)/(Rb) . . . (1) (wherein Rsp is an index of water affinity; Rav is the reciprocal of the relaxation time of the polishing composition; and Rb is the reciprocal of the relaxation time of the water serving as a solvent of the polishing composition).

Abstract: A polishing composition having silica-based abrasive grains and a polishing method. A polishing composition having silica particles, wherein on the basis of a colloidal silica dispersion of the silica particles, the dispersion has an Rsp of 0.15 to 0.7 as measured using pulse NMR, and the colloidal silica particles have a shape coefficient SF1 of 1.20 to 1.80, wherein Rsp is calculated based on equation (1): Rsp=(Rav?Rb)/(Rb)??(1) (wherein Rsp is an index that indicates water affinity; Rav is an inverse of a relaxation time of the colloidal silica dispersion; and Rb is an inverse of a relaxation time of a blank aqueous solution obtained by removing the silica particles from the colloidal silica dispersion), and the shape coefficient SF1 is calculated based on equation (2): SF1=(area of a circle whose diameter is a maximum diameter of the particle)/(projected area)??(2).

Abstract: A hyper-branched polymer dispersant represented by, for example, formula (I) has high adhesion properties to a current collector substrate and therefore enables the formation of an electrically conductive bonding layer having high carbon nanotube concentration. When a composite current collector for an energy storage device electrode which is equipped with the electrically conductive bonding layer is used, it becomes possible to produce an energy storage device from which an electrical current can be extracted without causing the decrease in a voltage particularly in use applications that require a large electrical current instantaneously, such as electrical automotive applications, and which has a long cycle life.

Abstract: This film-forming composition includes, for example, a polymer, crosslinking agent and light-diffusing agent that contain a triazine ring-containing repeating unit structure such as that represented formula (17), and is able to provide cured films with good light diffusing properties. Furthermore, this film-forming composition, which includes the same polymer, crosslinking agent and fine inorganic particles having a cross-linkable functional group, is able to provide cured films with good high temperature and high humidity resistance.

Abstract: There is provided a lithium-air secondary cell having an air electrode, a negative electrode containing metal lithium or a lithium-containing material and a gel-form solid electrolyte, wherein the gel-form solid electrolyte contains a solid electrolyte salt, a solvent, and a specific lipid peptide-type gelator composed.

Abstract: A hyper-branched polymer dispersant represented by, for example, formula (I) has high adhesion properties to a current collector substrate and therefore enables the formation of an electrically conductive bonding layer having high carbon nanotube concentration. When a composite current collector for an energy storage device electrode which is equipped with the electrically conductive bonding layer is used, it becomes possible to produce an energy storage device from which an electrical current can be extracted without causing the decrease in a voltage particularly in use applications that require a large electrical current instantaneously, such as electrical automotive applications, and which has a long cycle life.

Abstract: This film-forming composition includes, for example, a polymer, crosslinking agent and light-diffusing agent that contain a triazine ring-containing repeating unit structure such as that represented formula (17), and is able to provide cured films with good light diffusing properties. Furthermore, this film-forming composition, which includes the same polymer, crosslinking agent and fine inorganic particles having a cross-linkable functional group, is able to provide cured films with good high temperature and high humidity resistance.

Abstract: There is provided a lithium-air secondary cell having an air electrode, a negative electrode containing metal lithium or a lithium-containing material and a gel-form solid electrolyte, wherein the gel-form solid electrolyte contains a solid electrolyte salt, a solvent, and a specific lipid peptide-type gelator composed.

Abstract: Disclosed is a conductive coating composition containing an organic solvent dispersion of an intrinsically conductive polymer such as a doped polyaniline or a doped polythiophene, and a binder. The conductive coating composition is characterized in that the binder contains a polymerizable monomer-dispersed silica sol, which is obtained by dispersing a colloidal silica into a polymerizable organic compound monomer. The composition provides a conductive thin film having high transparency and excellent strength.

Abstract: Disclosed is an image processing apparatus, comprising a shading-information acquisition device 1 for picking up an image of an actual sample, a shading-information calculation section 201 for calculating shading information using the image acquired by the shading-information acquisition device 1, and storing the calculated shading information in a shading-information storage section 101, in association with the value of a parameter including an image pickup condition during the pickup of the image, a parameter calculation section 203 for calculating a specific value of the parameter at given position of a virtual 3-dimensional model, a shading-information read section 204 for allowing the shading-information storage section 101 to read the shading information corresponding to the calculated parameter value therethrough, and a shading processing section 206 for calculating a brightness value at a target position HP of the virtual 3-dimensional model, using the read shading information and a texture stored in

Abstract: A bipolar transistor circuit element includes a semiconductor substrate; successively disposed on the substrate, a base layer, an emitter layer, and a collector layer; a bipolar transistor formed from parts of the collector, base, and emitter layers and including a base electrode electrically connected to the base layer and a base electrode pad for making an external connection to the base layer; a base ballasting resistor formed from a part of the base layer isolated from the bipolar transistor and electrically connecting the base electrode to the base electrode pad; and a base parallel capacitor connected in parallel with the base ballasting resistor wherein the base parallel capacitor includes part of the base input pad, a dielectric film disposed on part of the base electrode pad, and a second electrode disposed on the dielectric layer opposite the base electrode pad and electrically connected to the emitter electrode of the bipolar transistor.

Abstract: In a method for fabricating a thin film solar cell, a thin semiconductor film serving as a power generating layer is formed on a substrate via an intermediate layer, a plurality of holes are formed penetrating through the thin semiconductor film and reaching the intermediate layer, and the intermediate layer is etched away through the through-holes, separating the thin semiconductor film from the substrate with high-efficiency. Since stress is hardly applied to the thin semiconductor film during the separation process, cracking and breaking of the semiconductor film is avoided. Further, since the surface of the substrate is maintained in good condition, the substrate can be reused, resulting in a reduction in the production cost.

Abstract: A semiconductor laser particularly adapted for operation in the self-pulsation mode and method for production thereof. A central mesa is formed in the upper cladding layer and normally requires relatively thick sections at either side of the mesa in order to form a wageguide of sufficient thickness to cause self-pulsation operation. In order to control the thickness of the upper cladding layer bounding the mesa, the mesa is first formed by etching the regions bounding the mesa to relatively thin sections capable of ready gauging by optical interferometry. A composite upper clading layer is then formed by utilizing MOCVD crystal growth techniques to form a buffer layer on the upper cladding layer bounding the mesa, the buffer layer having an aluminum content about the same as the aluminum content of the AlGaAs upper cladding layer.

Abstract: A semiconductor laser includes a first cladding layer having a forward mesa with at least one end at least partially spaced from the adjacent facet of the laser. A current blocking layer buries the mesa at its sides and at least partially at the ends of the mesa so that the ends are at least partially spaced from the facets. The current blocking layer reduces current injection and surface recombination at the facets at least partially spaced from the mesa ends, thereby increasing the catastrophic optical damage level of the laser. The mesa is formed without etching or exposing the active layer so that formation of interfaces that refract light or shorten laser lifetime are avoided. An increase in COD level of about 20 percent is achieved in the invention.

Abstract: A semiconductor laser particularly adapted for operation in the self-pulsation mode and method for production thereof. A central mesa is formed in the upper cladding layer and normally requires relatively thick sections at either side of the mesa in order to form a waveguide of sufficient thickness to cause self-pulsation operation. In order to control the thickness of the upper cladding layer bounding the mesa, the mesa is first formed by etching the regions bounding the mesa to relatively thin sections capable of ready gauging by optical interferometry. A composite upper cladding layer is then formed by utilizing MOCVD crystal growth techniques to form a buffer layer on the upper cladding layer bounding the mesa, the buffer layer having an aluminum content about the same as the aluminum content of the AlGaAs upper cladding layer.

Abstract: A semiconductor laser includes a first cladding layer having a forward mesa with at least one end at least partially spaced from the adjacent facet of the laser. A current blocking layer buries the mesa at its sides and at least partially at the ends of the mesa so that the ends are at least partially spaced from the facets. The current blocking layer reduces current injection and surface recombination at the facets at least partially spaced from the mesa ends, thereby increasing the catastrophic optical damage level of the laser. The mesa is formed without etching or exposing the active layer so that formation of interfaces that refract light or shorten laser life-time are avoided. An increase in COD level of about 20 percent is achieved in the invention.

Abstract: A P type semiconductor layer is epitaxially grown on an N.sup.+ type semiconductor substrate to form a PN junction between them so as to expose its circumference to the peripheral surface of the substrate. The P type layer is formed into a mesa having a tilted surface to which the circumference of the PN junction is exposed. Then an N.sup.+ type diffusion layer is disposed on the tilted mesa surface to protect the PN junction.

Abstract: An avalanche photodiode comprises a photo-electric conversion region made of a semiconductor having an energy band gap smaller than the photon energy and a carrier multiplying region made of a semiconductor that differs from the semiconductor of the photo-electric conversion region. The different semiconductors for imparting superior functions to the regions are used to improve the quantum efficiency in the photo-electric conversion region and to decrease noise in the carrier multiplying region.

Abstract: A semiconductive body in the form of a rectangular parallelepiped is formed of a semiconductive material, such as gallium arsenide or indium phosphide or Group IV elements, having an electric field-to-current characteristic either including a nonlinear region, such as a negative resistance region; or nonlinear and partly including a saturated region. A dc biasing electric field is applied across two opposite faces of the substrate while an ac input electric field is applied across two opposite faces perpendicular to the first faces of the semiconductive body to form a resultant electric field variable in a portion of the characteristic including the nonlinear or saturated region. This variation in the resultant field causes a current component flowing in the direction of the biasing field through the body to have a frequency equal to a multiple of that of the ac input field.