Abstract: In a conventional bistable liquid crystal device, switching characteristics fluctuate among panels and there is a problem in mass productivity. As an intermediate layer, an uneven film is inserted between a low anchoring layer and ITO. The uneven film has an average surface roughness of 2 nm or less, which is measured by an atomic force microscope. In this manner, the low anchoring layer is not affected by the surface shape of the ITO film which differs among panels, and the switching characteristics are stabilized.

Abstract: In a conventional bistable liquid crystal device, switching characteristics fluctuate among panels and there is a problem in mass productivity. As an intermediate layer, an uneven film is inserted between a low anchoring layer and ITO. The uneven film has an average surface roughness of 2 nm or less, which is measured by an atomic force microscope. In this manner, the low anchoring layer is not affected by the surface shape of the ITO film which differs among panels, and the switching characteristics are stabilized.

Abstract: In an EL element including a light emitting layer sandwiched between upper and lower electrodes, of light emitted therefrom, light totally reflected at a light emitting layer interface is not taken out, so there is a problem in that light emission efficiency reduces. Therefore, a light scattering layer in which metal particles are dispersed is provided between an electrode and the light emitting layer. According to such a structure, the light from the light emitting layer can be scattered by the metal particles and taken out, thereby improving the light emission efficiency. When plasmon is excited in the metal particles, light confined in the light emitting layer or each layer adjacent thereto can be used, thereby improving light use efficiency.

Abstract: In an EL element including a light emitting layer sandwiched between upper and lower electrodes, of light emitted therefrom, light totally reflected at a light emitting layer interface is not taken out, so there is a problem in that light emission efficiency reduces. Therefore, a light scattering layer in which metal particles are dispersed is provided between an electrode and the light emitting layer. According to such a structure, the light from the light emitting layer can be scattered by the metal particles and taken out, thereby improving the light emission efficiency. When plasmon is excited in the metal particles, light confined in the light emitting layer or each layer adjacent thereto can be used, thereby improving light use efficiency.

Abstract: A difficulty has been given, that is, in a condition that an electrostatic chuck having an oxide layer as a dielectric layer is set in catalytic chemical vapor deposition apparatus, as a silicon thin film is repeatedly deposited on a workpiece held by the electrostatic chuck, adsorbing power of the electrostatic chuck is gradually decreased, and finally the chuck does not adsorb a substrate at all. Thus, a dielectric layer on a surface of the electrostatic chuck is covered with an insulating film containing silicon nitride or silicon oxide. Thus, since damage to a chuck surface can be prevented, the damage being due to hydrogen radicals generated during depositing the silicon film by the catalytic chemical vapor deposition apparatus, even if the silicon film is repeatedly deposited, power for adsorbing the substrate is not decreased, and consequently substrate temperature is stabilized during depositing the silicon film.

Abstract: Provided is a technique for producing a double-sided display device using a self light emitting display element in which a thickness thereof is small, a contrast is high, and a privacy is kept. A first polarization layer and a second polarization layer are provided so as to sandwich the self light emitting display element and it is set such that the transmission axis of the first polarization layer and the transmission axis of the second polarization layer are orthogonal to each other.

Abstract: Provided is a technique for producing a double-sided display device using a self light emitting display element in which a thickness thereof is small, a contrast is high, and a privacy is kept. A first polarization layer and a second polarization layer are provided so as to sandwich the self light emitting display element and it is set such that the transmission axis of the first polarization layer and the transmission axis of the second polarization layer are orthogonal to each other.

Abstract: In order to reduce drive power of a lighting device for liquid crystal display, the lighting device is composed of a semi-transmission reflecting layer in which a reflection portion and a transmission portion are formed and a light emitting element formed to a region corresponding to the transmission portion, and light emitted from the light emitting element is outputted through the transmission portion.

Abstract: A reflective type liquid crystal display device has a first transparent substrate, a second transparent substrate, and a light scattering liquid crystal layer disposed between the first and second transparent substrates. A solar cell is disposed on the second transparent substrate. A portion of the solar cell comprises an active element for driving the light scattering liquid crystal layer.

Abstract: A reflection type liquid crystal display device according to the present invention is constructed to include: a light modulation layer having a light scattering state changed when a voltage is applied between electrode faces; at least one kind of color separation layer arranged at the back of the liquid crystal; and a reflection layer arranged at the back of the color separation layer. The light modulation layer is a polymer network type polymer scattered liquid crystal layer or a phase conversion type liquid crystal layer, and the color separation mirror is a cholesteric liquid crystal polymer layer or a dielectric multi-layered thin film characterized to reflect a light within a predetermined wavelength range in the visible light region selectively. A reflection preventing layer and an ultraviolet ray cut-off layer are further arranged on the surfaces of the electrode faces.

Abstract: A reflection type liquid crystal display device comprises a pair of substrates having electrodes, a light scattering type liquid crystal layer interposed between the substrates, a reflection layer disposed over a rear surface of the light scattering type liquid crystal layer, and a light absorbing layer disposed over a rear surface of the reflection layer for absorbing a light passed through the reflection layer. The light scattering type liquid crystal layer changes into a scattering state or a transparent state in accordance with a change in a voltage level between the electrodes, and transmits 60% or more of incident light irrespective of the change in the voltage level between the electrodes. The reflection layer has a reflectivity within a range of 10 to 50% for reflecting a forward scattered light passed through the light scattering type liquid crystal layer.

Abstract: A liquid crystal display panel comprises first and second substrates each having a transparent electrode and an orientation plane, a nematic liquid crystal material disposed between the first and second substrates, a polarizer disposed over the first substrate and the nematic liquid crystal material, and a simplex polymer film comprised of a single optically anisotropic substance disposed between the first substrate and the polarizer. The nematic liquid crystal material has a positive anisotropy of refractive index, a retardation of 0.55 .mu.m to 1.75 .mu.m, and molecules twisted at a high degree with a twist angle of 180.degree. to 270.degree.. The simplex polymer film has a retardation of 20 nm to 200 nm.

Abstract: A semiconductor substrate is provided which has a semiconductor on insulator structure but in which can be formed a thin film integrated circuit having electrical characteristics and microstructure equal to or of greater density than a silicon integrated circuit formed using a bulk single crystal silicon wafer. The semiconductor substrate has a structure which is formed of a sequentially layered single crystal silicon thin film sandwiched between a thermally oxidized silicon film and a silicon oxide or silicon nitride film, an element smoothing layer, a fluoro-epoxy series resin adhesive layer, and a supporting substrate. The single crystal silicon thin film can have integrated circuit devices formed in a sub-micron geometry similar to that of a bulk single crystal silicon. A transparent glass or a bulk single crystal silicon wafer can be used as a supporting substrate.

Abstract: The liquid crystal display device is comprised of a matrix panel 1, a common driver 2 and a segment driver 3. A liquid crystal layer is interposed between rows of the scanning electrodes 4 and columns of signal electrodes 5. A frame memory 6 stores an inputted dot data each frame. An orthonormal signal generator 7 generates a set of orthonormal signals to sequentially feed the same in a desired combination pattern to the common driver 2 to concurrently drive a multiple of the scanning electrodes 4 to effect group sequential scanning according to the combination pattern. A dot product computation unit 8 executes dot product computation between a set of the dot data and the set of the orthonormal signals, the result of which is fed to the segment driver 3 to drive the columns of the signal electrodes 5. The group sequential scanning is repeated several times within one cycle to display a picture. The orthonormal signals are horizontally or vertically shifted to improve the quality of the displayed picture.

Abstract: A thin film semiconductor substrate for a display device includes a thin film semiconductor circuit layer formed on a single crystal semiconductor substrate and a support substrate formed over the thin film semiconductor circuit layer. An adhesive layer made of a fluorine-containing epoxy family adhesive is provided between the insulating layer and the support substrate. When the single crystal semiconductor substrate is removed, the yield rate in production of the thin film semiconductor substrate is greatly improved.