Abstract: A plasma processing apparatus includes: a processing container; a processing gas supply unit; a mounting table configured to mount a to-be-processed substrate thereon; an upper electrode provided above the mounting table; a plasma generation unit configured to supply a high frequency power to generate plasma of the processing gas; an exhaust flow path formed by a side wall of the processing container and a side surface of the mounting table; a conductive rectification plate configured to adjust a flow of the processing gas discharged to outside of the processing container; a conductor arranged in the exhaust flow path at a position higher than the rectification plate and lower than the to-be-processed substrate to face at least a part of the upper electrode. A distance of the conductor in the height direction in relation to the to-be-processed surface of the substrate is set to be within a predetermined range.

Abstract: There is provided a temperature control mechanism comprising: a plurality of combinations of a heater and a thyristor, wherein at least one combination of the heater and the thyristor is provided on a zone-by-zone basis, and wherein an area of an electrostatic chuck for mounting a substrate is divided into a plurality of zones; a power supply configured to supply current to heaters of the plurality of combinations respectively through the thyristors of the plurality of combinations; a pair of filters disposed at a power supply line for supplying electric power from the power supply to the heaters and configured to eliminate high frequency power applied to the power supply.

Abstract: A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck.

Abstract: Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.

Abstract: A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. The transfer chamber is connected to the first and the second processing chamber and accommodates a transfer unit for transferring the substrate. The frame structure has a pair of column parts and a beam part supported at top portions of the column parts. The elevating part is coupled to the beam part to be moved in a horizontal direction and moves the lid part in the vertical direction. The beam part extends above the first and the second processing chamber and the transfer chamber.

Abstract: Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.

Abstract: There is provided a temperature control mechanism comprising: a plurality of combinations of a heater and a thyristor, wherein at least one combination of the heater and the thyristor is provided on a zone-by-zone basis, and wherein an area of an electrostatic chuck for mounting a substrate is divided into a plurality of zones; a power supply configured to supply current to heaters of the plurality of combinations respectively through the thyristors of the plurality of combinations; a pair of filters disposed at a power supply line for supplying electric power from the power supply to the heaters and configured to eliminate high frequency power applied to the power supply.

Abstract: A plasma processing apparatus includes: a processing container; a processing gas supply unit; a mounting table configured to mount a to-be-processed substrate thereon; an upper electrode provided above the mounting table; a plasma generation unit configured to supply a high frequency power to generate plasma of the processing gas; an exhaust flow path formed by a side wall of the processing container and a side surface of the mounting table; a conductive rectification plate configured to adjust a flow of the processing gas discharged to outside of the processing container; a conductor arranged in the exhaust flow path at a position higher than the rectification plate and lower than the to-be-processed substrate to face at least a part of the upper electrode. A distance of the conductor in the height direction in relation to the to-be-processed surface of the substrate is set to be within a predetermined range.

Abstract: A plasma processing apparatus includes a reaction chamber for performing a plasma process on a substrate. A pedestal to receive the substrate thereon is provided in the reaction chamber. The reaction chamber includes an area A to generate the plasma therein, an exhaust area, and an area B provided between the area A and the exhaust area. The plasma is generated in the area B. An inner wall of the area A is covered with a first gasifying material. A plurality of partition members made of a second gasifying material is provided downstream of a surface of the substrate on the pedestal so as to divide an inside of the chamber into the area A and the area B to prevent a first particle present in the area B from diffusing into the area A.

Abstract: A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. The transfer chamber is connected to the first and the second processing chamber and accommodates a transfer unit for transferring the substrate. The frame structure has a pair of column parts and a beam part supported at top portions of the column parts. The elevating part is coupled to the beam part to be moved in a horizontal direction and moves the lid part in the vertical direction. The beam part extends above the first and the second processing chamber and the transfer chamber.

Abstract: To provide a method for producing a filtration filter that can simplify the process for providing clean water or freshwater. By etching silicon substrate 1 using masking film formed on a surface of substrate 1 and having numerous openings to expose portions of the surface, numerous circular holes 2 with an approximate diameter of 100 nm are formed in substrate 1. Diameter (D1) at minimum-diameter portions 4 near the openings of circular holes 2 to be reduced by silica film 3 is adjusted to be 1 nm˜100 nm by depositing silica film 3 on the inner surfaces of circular holes 2.

Abstract: Provided is a water treatment device with which organic substances contained in raw water to be treated are decomposed to thereby alleviate the load to be imposed on a downstream filter and with which it is possible to avoid corrosion of the piping or the like.

Abstract: A light shielding mask 24 opposing to an entrance surface of a fly eye lens 23 is provided, and a transparent portion 25 is made open corresponding to each of lens portions 23b, respectively. Each transparent portion 25 is divided to be formed into a first transparent portion 25a allowing light for forming a projected image 101a on an upper stage of an illuminated surface 100a to enter the lens portions 23b and a second transparent portion 25b allowing light for forming a projected image 101b on an lower stage of the illuminated surface 100b to enter the lens portions 23b, and these are individually set, thereby a difference between an irradiation distance to each of the illuminated surface 100a, 100b due to a step can be complemented, individually.

Abstract: There is provided a lighting system simple in configuration and capable of irradiating an irradiation image with less distortion onto an irradiation surface. For this reason, light shielding masks 24 causing light from an LED 12 to be incident on lens units 23b are arranged oppositely to a fly-eye lens 23. The opening shape of a light shielding unit 24b arranged on the light shielding mask 24 is set according to the state where the fly-eye lens 23 opposes an irradiation surface 100, and the light shielding unit 24b prohibits light in a range distorting the shape of an irradiation image on the irradiation surface 100 from being incident on the lens units 23b.

Abstract: A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unit 106 structuring a ceiling portion of a processing chamber 102 of an etching device 100 is structured from a lower assembly 128 at a processing chamber 102 side including an upper electrode 130, and an upper assembly 128 at a power supply side including an electro-body 144. A lock mechanism 156 is released, and after the upper assembly 126 is independently raised and removed by a lift mechanism 164, maintenance of the upper assembly 126 and/or the lower assembly 128 is carried out. The lock mechanism 156 is locked, and after the upper and lower assemblies 126, 128 are integrally raised and removed by the lift mechanism 164, maintenance of an interior of the processing chamber 102 is carried out.

Abstract: A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unit 106 structuring a ceiling portion of a processing chamber 102 of an etching device 100 is structured from a lower assembly 128 at a processing chamber 102 side including an upper electrode 130, and an upper assembly 128 at a power supply side including an electro-body 144. A lock mechanism 156 is released, and after the upper assembly 126 is independently raised and removed by a lift mechanism 164, maintenance of the upper assembly 126 and/or the lower assembly 128 is carried out. The lock mechanism 156 is locked, and after the upper and lower assemblies 126, 128 are integrally raised and removed by the lift mechanism 164, maintenance of an interior of the processing chamber 102 is carried out.

Abstract: A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unit 106 structuring a ceiling portion of a processing chamber 102 of an etching device 100 is structured from a lower assembly 128 at a processing chamber 102 side including an upper electrode 130, and an upper assembly 126 at a power supply side including an electro-body 144. A lock mechanism 156 is released, and after the upper assembly 126 is independently raised and removed by a lift mechanism 164, maintenance of the upper assembly 126 and/or the lower assembly 128 is carried out. The lock mechanism 156 is locked, and after the upper and lower assemblies 126, 128 are integrally raised and removed by the lift mechanism 164, maintenance of an interior of the processing chamber 102 is carried out.

Abstract: A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unit 106 structuring a ceiling portion of a processing chamber 102 of an etching device 100 is structured from a lower assembly 128 at a processing chamber 102 side including an upper electrode 130, and an upper assembly 128 at a power supply side including an electro-body 144. A lock mechanism 156 is released, and after the upper assembly 126 is independently raised and removed by a lift mechanism 164, maintenance of the upper assembly 126 and/or the lower assembly 128 is carried out. The lock mechanism 156 is locked, and after the upper and lower assemblies 126, 128 are integrally raised and removed by the lift mechanism 164, maintenance of an interior of the processing chamber 102 is carried out.