Abstract: The present invention is directed to the provision of a novel liquid crystalline organic semiconductor material that is highly stable under an film forming environment and, at the same time, can easily form a film, for example, by coating.

Abstract: The present invention is directed to the provision of a liquid crystalline organic semiconductor material, which is highly stable under a film forming environment and, at the same time, can easily form a film, for example, by coating. The liquid crystalline organic semiconductor material comprises: a thiophene skeleton comprising 3 to 6 thiophenes linearly connected to each other; and an identical alkyl group having 1 to 20 carbon atoms located on both sides of the thiophene skeleton, wherein acetylene skeletons each have been introduced into between the thiophene skeleton and the alkyl group, or acetylene skeletons have been introduced symmetrically into the thiophene skeleton.

Abstract: The main object of the invention is to provide an organic semiconductor material whose material designing is easy, and is capable to secure satisfying purity, so that it can be easily used industrially. And further, also to provide an organic semiconductor structure and an organic semiconductor device using the organic semiconductor material.

Abstract: An organic semiconductor material characterized by having a structure represented by chemical formula 1, the planarity of a main chain A1-X-A2 being disintegrated by steric hindrance between B1 and X and steric hindrance between B2 and X, the organic semiconductor material having a number average molecular weight of about 2,000 to about 200,000: wherein A1, A2, B1, B2 and X each have a skeleton structure comprising L 6 ? electron rings, M 8 ? electron rings, N 10 ? electron rings, O 12 ? electron rings, P 14 ? electron rings, Q 16 ? electron rings, R 18 ? electron rings, S 20 ? electron rings, T 22 ? electron rings, U 24 ? electron rings, and V 26 ? electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6; and B1 and B2 have an alkyl group.

Abstract: An organic semiconductor material, enabling to exhibit liquid crystal phase at wide temperature range including at least ordinary temperature and to exhibit high charge carrier mobility, and an organic semiconductor structure and organic semiconductor device formed from the organic semiconductor material. The organic semiconductor material has a quaterthiophene skeleton as shown in a following chemical formula 1, wherein R1 in the chemical formula 1 is an alkyl group of C1 to C20 or a hydrogen, and R2 is an alkyl group of C1 to C20 or a hydrogen.

Abstract: This invention is directed to the provision of a method for organic semiconductor layer formation that can easily form a uniform thin film, by coating, which has good charge mobility and a high level of alignment. The method for organic semiconductor layer formation is characterized by comprising the steps of: forming a coating film in a mixed liquid crystal state using a mixture, which can exhibit a thermotropic mixed liquid crystal phase, prepared by mixing an organic semiconductor material with a solvent; and either cooling the coating film to a temperature at which the coating film does not exhibit any mixed liquid crystal state, or removing the solvent while cooling the coating film, to form an organic semiconductor layer comprising a smectic liquid crystal phase or a crystal phase of the organic semiconductor material.

Abstract: The present invention is directed to the provision of a novel liquid crystalline organic semiconductor material that is highly stable under an film forming environment and, at the same time, can easily form a film, for example, by coating.

Abstract: An organic semiconductor material characterized by having a structure represented by chemical formula 1, the planarity of a main chain A1-X-A2 being disintegrated by steric hindrance between B1 and X and steric hindrance between B2 and X, the organic semiconductor material having a number average molecular weight of about 2,000 to about 200,000: wherein A1, A2, B1, B2 and X each have a skeleton structure comprising L 6 ? electron rings, M 8 ? electron rings, N 10 ? electron rings, O 12 ? electron rings, P 14 ? electron rings, Q 16 ? electron rings, R 18 ? electron rings, S 20 ? electron rings, T 22 ? electron rings, U 24 ? electron rings, and V 26 ? electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6; and B1 and B2 have an alkyl group.

Abstract: The present invention is directed to the provision of a liquid crystalline organic semiconductor material, which is highly stable under a film forming environment and, at the same time, can easily form a film, for example, by coating. The liquid crystalline organic semiconductor material comprises: a thiophene skeleton comprising 3 to 6 thiophenes linearly connected to each other; and an identical alkyl group having 1 to 20 carbon atoms located on both sides of the thiophene skeleton, wherein acetylene skeletons each have been introduced into between the thiophene skeleton and the alkyl group, or acetylene skeletons have been introduced symmetrically into the thiophene skeleton.

Abstract: An electron gun assembly that emits three electron beams, which are arranged in line, toward a phosphor screen includes three cathodes arranged in line, three first grids arranged to face the associated cathodes, and a second grid with an integral structure that is disposed to face a phosphor screen side of the first grids. Each of the first grids is formed of a cup-shaped electrode body having an electron beam passage hole. The electron gun assembly further includes an insulation member through which the three first grids penetrate, the insulation member thus integrally holding the three first grids, a cylindrical member that surrounds the insulation member and has an implant part, and an insulating support member that supports the implant part of the cylindrical member.

Abstract: The object is to provide an organic semiconductor material, enabling to exhibit liquid crystal phase at wide temperature range including at least ordinary temperature and to exhibit high charge carrier mobility, and an organic semiconductor structure and organic semiconductor device formed from the organic semiconductor material. To achieve the object, the present invention provides an organic semiconductor material comprising a quaterthiophene skeleton shown in a following chemical formula 1, wherein R1 in the chemical formula 1 is an alkyl group of C1 to C20 or a hydrogen, and R2 is an alkyl group of C1 to C20 or a hydrogen.

Abstract: The main object of the invention is to provide an organic semiconductor material whose material designing is easy, and is capable to secure satisfying purity, so that it can be easily used industrially. And further, also to provide an organic semiconductor structure and an organic semiconductor device using the organic semiconductor material.

Abstract: A prefocus lens section in an electron gun assembly includes a second grid that is disposed on an electron beam generating section side, a third grid that is disposed on a main lens section side, and a shield grid that is disposed between the second grid and the third grid. The shield grid is a cup-shaped electrode with a side wall that surrounds an outer peripheral part of the third grid, which part is located on the second grid side, and extends in parallel to a tube axis. The shield grid has a bottom surface disposed to face the second grid and has an open end disposed to face the third grid. A relationship, Ec<Vf<Er, is established, where Ec is a potential applied to the second grid, Vf is a potential applied to the shield grid, and Er is a potential applied to the third grid.

Abstract: With a view to providing a conjuring tool which is simple in construction and operation, an interior of a case main body 2 is divided by a partition plate 5 into two portions such as a coin accommodating portion 6 for accommodating coins 20 in a state in which coins are stacked one on another vertically in advance and a coin introducing portion 7 for introducing coins 20a during a play, the partition plate 5 is fixed to an interior surface of a top wall of the case main body 2, and a slit 5a is formed between a lower end of the partition plate 5 and a bottom wall of the case main body 2 for allowing coins 20 accommodated within the coin accommodating portion 6 to pass therethrough into the coin introducing portion 7 one by one.

Abstract: A resistor for an electron gun assembly is configured to apply a voltage, which is divided with a predetermined resistance division ratio, to an electrode provided in the electron gun assembly. The resistor includes an insulating substrate, an electrode element provided in association with each of a plurality of terminal portions on the insulating substrate, a resistor element having a pattern for connecting the electrode elements and obtaining a predetermined resistance value, and an insulating coating layer that covers the resistor element. In at least one terminal portion B, the electrode element is disposed spaced apart from the insulating coating layer, and an intermediate resistor element is disposed between the electrode element and the insulating coating layer. The intermediate resistor element has a resistance value that is different from a resistance value of the electrode element.

Abstract: A resistor for an electron gun assembly is configured to apply a voltage, which is divided with a predetermined resistance division ratio, to an electrode provided in the electron gun assembly. The resistor includes an insulating substrate, an electrode element provided in association with each of a plurality of terminal portions on the insulating substrate, a resistor element having a pattern for connecting the electrode elements and obtaining a predetermined resistance value, and an insulating coating layer that covers the resistor element. In at least one terminal portion B, the electrode element is disposed spaced apart from the insulating coating layer, and an intermediate resistor element is disposed between the electrode element and the insulating coating layer. The intermediate resistor element has a resistance value that is different from a resistance value of the electrode element.

Abstract: With a view to providing a conjuring tool which is simple in construction and operation, an interior of a case main body 2 is divided by a partition plate 5 into two portions such as a coin accommodating portion 6 for accommodating coins 20 in a state in which coins are stacked one on another vertically in advance and a coin introducing portion 7 for introducing coins 20a during a play, the partition plate 5 is fixed to an interior surface of a top wall of the case main body 2, and a slit 5a is formed between a lower end of the partition plate 5 and a bottom wall of the case main body 2 for allowing coins 20 accommodated within the coin accommodating portion 6 to pass therethrough into the coin introducing portion 7 one by one.

Abstract: An electron gun assembly that emits three electron beams, which are arranged in line, toward a phosphor screen includes three cathodes arranged in line, three first grids arranged to face the associated cathodes, and a second grid with an integral structure that is disposed to face a phosphor screen side of the first grids. Each of the first grids is formed of a cup-shaped electrode body having an electron beam passage hole. The electron gun assembly further includes an insulation member through which the three first grids penetrate, the insulation member thus integrally holding the three first grids, a cylindrical member that surrounds the insulation member and has an implant part, and an insulating support member that supports the implant part of the cylindrical member.

Abstract: A prefocus lens section in an electron gun assembly includes a second grid that is disposed on an electron beam generating section side, a third grid that is disposed on a main lens section side, and a shield grid that is disposed between the second grid and the third grid. The shield grid is a cup-shaped electrode with a side wall that surrounds an outer peripheral part of the third grid, which part is located on the second grid side, and extends in parallel to a tube axis. The shield grid has a bottom surface disposed to face the second grid and has an open end disposed to face the third grid. A relationship, Ec<Vf<Er, is established, where Ec is a potential applied to the second grid, Vf is a potential applied to the shield grid, and Er is a potential applied to the third grid.

Abstract: A cathode-ray tube includes a glass envelope having a panel with an inner surface formed with a phosphor screen, and a cylindrical neck extending substantially coaxially with a tube axis. An electron gun is arranged in the neck, and a stem is welded to an end of the neck. The stem has a substantially circular disk-like flare made of glass and having an outer peripheral portion welded to the end of the neck, and a plurality of stem pins attached to the flare. The end of the neck and the flare of the stem are welded to each other such that a glass portion of the flare surrounds a glass portion of the end of the neck from outside.