Abstract: A ceramic substrate has a base material composed of an amorphous phase and particles composed of a crystalline phase and dispersed in the base material. Some of the particles are permitted to protrude from at least one surface of the base material. The amorphous phase can contain glass and the crystalline phase can contain a crystalline filler.

Abstract: An electrical testing substrate unit includes a multi-layer ceramic substrate formed of mullite and a borosilicate glass as predominant ceramic components. In the multi-layer ceramic substrate, the borosilicate glass contains an alkali metal oxide in an amount of 0.5 to 1.5 mass %. The multi-layer ceramic substrate has a mean coefficient of linear thermal expansion having a value of 3.0 to 4.0 ppm/° C. between ?50° C. and 150° C. A thermal expansion coefficient, ?1, of the multi-layer ceramic substrate as determined at a particular temperature and a thermal expansion coefficient, ?2, of a to-be-tested silicon wafer as determined at the same temperature silicon satisfy a relation: 0 ppm/° C.<?1??2?2.5 ppm/° C. through the temperature range of ?50° C. to 150° C. Electrodes are formed on a surface of the multi-layer ceramic substrate.

Abstract: A ceramic substrate has a base material composed of an amorphous phase and particles composed of a crystalline phase and dispersed in the base material. Some of the particles are permitted to protrude from at least one surface of the base material.

Abstract: An electrical testing substrate unit includes a multi-layer ceramic substrate formed of mullite and a borosilicate glass as predominant ceramic components. In the multi-layer ceramic substrate, the borosilicate glass contains an alkali metal oxide in an amount of 0.5 to 1.5 mass %. The multi-layer ceramic substrate has a mean coefficient of linear thermal expansion having a value of 3.0 to 4.0 ppm/° C. between ?50° C. and 150° C. A thermal expansion coefficient, ?1, of the multi-layer ceramic substrate as determined at a particular temperature and a thermal expansion coefficient, ?2, of a to-be-tested silicon wafer as determined at the same temperature silicon satisfy a relation: 0 ppm/° C.<?1??2?2.5 ppm/° C. through the temperature range of ?50° C. to 150° C. Electrodes are formed on a surface of the multi-layer ceramic substrate.

Abstract: A wiring board including a laminate comprising: a low-temperature fired layer comprising ceramic particles ? and a glass component; and a ceramic layer comprising ceramic particles ? that do not sinter at the firing temperature of the low-temperature fired layer and a glass component, wherein the ceramic particles ? have a mean particle size larger than that of the ceramic particles ? and a specific surface area smaller than that of the ceramic particles ?.

Abstract: A wiring board including a laminate comprising: a low-temperature fired layer comprising ceramic particles &agr; and a glass component; and a ceramic layer comprising ceramic particles &bgr; that do not sinter at the firing temperature of the low-temperature fired layer and a glass component, wherein the ceramic particles &bgr; have a mean particle size larger than that of the ceramic particles &agr; and a specific surface area smaller than that of the ceramic particles &agr;.

Abstract: A ceramic printed circuit substrate includes a glass ceramic substrate and a surface circuit pattern, which is formed on the substrate by use of a conductive paste. The conductive paste contains conductive components of silver and platinum and filler components of molybdenum, tungsten, manganese dioxide, silicon dioxide and copper oxide. A ceramic green sheet and a surface circuit pattern formed thereon by use of the conductive paste are simultaneously fired at a temperature not higher than 1000° C., thereby yielding the ceramic printed circuit substrate.

Abstract: In the glass-ceramic composition, a weight ratio of a glass and a ceramic is 40 to 60:60 to 40. The glass is composed of 40 to 60 wt % of SiO2, 5 to 9 wt % of Al2O3, 1 to 10 wt % of B2O3, 3 to 5 wt % of Na2O+K2O, 3 to 15 wt % of CaO+MgO+ZnO, and 15 to 40 wt % of PbO, and does not contain Li2O. A softening point of the glass is 650 to 780° C. The circuit substrate includes a laminate substrate formed by laminating insulating substrates, and a conductor circuit formed on a surface of each insulating substrate. The insulating substrate is formed of the glass-ceramic composition. A wiring layer and a via hole conductor are provided inside the laminate substrate.

Abstract: A ceramic wiring board having a metalized part. The metalized part contains 100 parts by weight of an electrical-conduction imparting material made of at least one metal selected from the group consisting of Ag, Pd, Au and Pt; 3 to 5 parts by weight of a W and/or Mo compound, calculated in terms of metal W and/or metal Mo; and 1 to 10 parts by weight of a glass composition. The W compound includes WO.sub.3 and/or WSi.sub.2, while the Mo compound includes MoSi.sub.2. In the ceramic wiring board, the shrinkage behavior on sintering of the wiring material can be made similar to that of the ceramic material, so that warping and deformation of the wiring board are minimized.