Patents by Inventor Shigeru Tahara
Shigeru Tahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240146258Abstract: A power amplifier circuit that includes an external input terminal and an external output terminal; a first power amplifier, a second power amplifier, a third power amplifier, and a fourth power amplifier; a transformer including an input-side coil and an output-side coil; and a first transmission line, the external input terminal being connected to an input terminal of the first and second power amplifiers, an output terminal of the first power amplifier is connected to an input terminal of the third and fourth power amplifiers, output terminals of the third and fourth power amplifiers being connected to a first and second end of the input-side coil respectively, the external output terminal being connected to a first end of the output-side coil, and an output terminal of the second power amplifier being connected to a second end of the output-side coil via the first transmission line.Type: ApplicationFiled: January 9, 2024Publication date: May 2, 2024Applicant: Murata Manufacturing Co., Ltd.Inventors: Kenji TAHARA, Shigeru TSUCHIDA, Kae YAMAMOTO
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Patent number: 11616194Abstract: An etching method includes: preparing a workpiece including a metal multilayer film having a magnetic tunnel junction and a mask formed by an inorganic material on the metal multilayer film; and etching the metal multilayer film by plasma of a mixed gas of ethylene gas and oxygen gas using the mask.Type: GrantFiled: March 15, 2019Date of Patent: March 28, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Ken Ando, Hiroki Maehara, Jun Sato, Kiyoshi Maeda, Shigeru Tahara
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Patent number: 11404283Abstract: A method for etching a ruthenium film includes a first step of etching the ruthenium film by plasma processing using oxygen-containing gas, and a second step of etching the ruthenium film by plasma processing using chlorine-containing gas. The first step and the second step are alternately performed. In the first step and the second step, the ruthenium film is etched at a target control temperature for a target processing time that are determined based on a pre-obtained relation between an etching amount per one cycle including the first step and the second step as a set, a control temperature of the ruthenium film, and processing times of each of the first step and the second step.Type: GrantFiled: September 4, 2020Date of Patent: August 2, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Shigeru Tahara, Nobuaki Seki, Takahiko Kato
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Publication number: 20220199418Abstract: A method for processing a substrate that includes: loading the substrate in a plasma processing chamber; performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: generating a first plasma from a first gas mixture including a fluorosilane and oxygen; performing a deposition step by exposing the substrate to the first plasma to form a passivation film including silicon and fluorine; generating a second plasma from a second gas mixture including a noble gas; and performing an etch step by exposing the substrate to the second plasma.Type: ApplicationFiled: November 9, 2021Publication date: June 23, 2022Inventors: Du Zhang, Hojin Kim, Shigeru Tahara, Kaoru Maekawa, Mingmei Wang, Jacques Faguet, Remi Dussart, Thomas Tillocher, Philippe Lefaucheux, Gaëlle Antoun
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Patent number: 11361945Abstract: A plasma processing apparatus of an embodiment includes a chamber body, a stage, a gas supply system, and a plasma generator. The chamber body provides an inner space thereof as a chamber. The stage is provided in the chamber. In the stage, a flow channel for a refrigerant is formed. The gas supply system is configured to supply a first gas causing capillary condensation thereof in a porous film and a second gas for etching a porous film to the chamber. The plasma generator is configured to generate plasma of a gas supplied to the chamber. The gas supply system provides a first flow passage connecting a source of the second gas to the chamber, a second flow passage connecting a source of the first gas to the first flow passage, and a third flow passage connecting a gas discharging apparatus to the second flow passage.Type: GrantFiled: May 9, 2018Date of Patent: June 14, 2022Assignee: TOKYO ELECTRON LIMITEDInventor: Shigeru Tahara
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Publication number: 20220102160Abstract: An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that the pressure of the first processing gas is smaller than the saturated vapor pressure of the first processing gas with respect to a temperature of an object to be processed while cooling the object to be processed on which the film to be etched is formed; and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.Type: ApplicationFiled: December 10, 2021Publication date: March 31, 2022Applicants: Tokyo Electron Limited, UNIVERSITE D'ORLEANSInventors: Shigeru TAHARA, Jacques FAGUET, Kaoru MAEKAWA, Kumiko ONO, Nagisa SATO, Remi DUSSART, Thomas TILLOCHER, Philippe LEFAUCHEUX, Gaëlle ANTOUN
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Patent number: 11120999Abstract: A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.Type: GrantFiled: December 11, 2018Date of Patent: September 14, 2021Assignees: TOKYO ELECTRON LIMITED, UNIVERSITE D'ORLEANSInventors: Koichi Yatsuda, Kaoru Maekawa, Nagisa Sato, Kumiko Ono, Shigeru Tahara, Jacques Faguet, Remi Dussart, Thomas Tillocher, Philippe Lefaucheux, Gaëlle Antoun
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Publication number: 20210242036Abstract: A method for etching an oxide semiconductor film includes: providing a substrate including a mask of a silicon-containing film on an oxide semiconductor film containing at least indium (In), gallium (Ga), and zinc (Zn); supplying a processing gas containing a bromine (Br)-containing gas or an iodine (I)-containing gas; and etching the oxide semiconductor film by plasma generated from the processing gas.Type: ApplicationFiled: January 29, 2021Publication date: August 5, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Masahiro YAMAZAKI, Shigeru Tahara
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Publication number: 20210028356Abstract: An etching method includes: preparing a workpiece including a metal multilayer film having a magnetic tunnel junction and a mask formed by an inorganic material on the metal multilayer film; and etching the metal multilayer film by plasma of a mixed gas of ethylene gas and oxygen gas using the mask.Type: ApplicationFiled: March 15, 2019Publication date: January 28, 2021Inventors: Ken ANDO, Hiroki MAEHARA, Jun SATO, Kiyoshi MAEDA, Shigeru TAHARA
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Publication number: 20200411293Abstract: A plasma processing apparatus of an embodiment includes a chamber body, a stage, a gas supply system, and a plasma generator. The chamber body provides an inner space thereof as a chamber. The stage is provided in the chamber. In the stage, a flow channel for a refrigerant is formed. The gas supply system is configured to supply a first gas causing capillary condensation thereof in a porous film and a second gas for etching a porous film to the chamber. The plasma generator is configured to generate plasma of a gas supplied to the chamber. The gas supply system provides a first flow passage connecting a source of the second gas to the chamber, a second flow passage connecting a source of the first gas to the first flow passage, and a third flow passage connecting a gas discharging apparatus to the second flow passage.Type: ApplicationFiled: May 9, 2018Publication date: December 31, 2020Applicant: Tokyo Electron LimitedInventor: Shigeru TAHARA
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Publication number: 20200402814Abstract: A method for etching a ruthenium film includes a first step of etching the ruthenium film by plasma processing using oxygen-containing gas, and a second step of etching the ruthenium film by plasma processing using chlorine-containing gas. The first step and the second step are alternately performed. In the first step and the second step, the ruthenium film is etched at a target control temperature for a target processing time that are determined based on a pre-obtained relation between an etching amount per one cycle including the first step and the second step as a set, a control temperature of the ruthenium film, and processing times of each of the first step and the second step.Type: ApplicationFiled: September 4, 2020Publication date: December 24, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Shigeru Tahara, Nobuaki Seki, Takahiko Kato
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Publication number: 20200395221Abstract: A method of an embodiment includes (i) a step of supplying a first gas to a chamber, wherein the first gas is perfiuorotetraglyme gas, and (ii) a step of generating plasma of a second gas for etching of a porous film in order to etch the porous film at the same time as the step of supplying a first gas or after the step of supplying a first gas. Partial pressure of the first gas in the chamber or pressure of the first gas in the chamber when only the first gas is supplied to the chamber is higher than critical pressure causing capillary condensation of the first gas in the porous film and is lower than saturated vapor pressure of the first gas at a temperature of the workpiece during execution of the step of supplying a first gas.Type: ApplicationFiled: May 9, 2018Publication date: December 17, 2020Applicants: Tokyo Electron Limited, L'Air Liquide Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude, UNIVERSITE D'ORLEANS, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEInventors: Shigeru TAHARA, Keiichiro URABE, Peng SHEN, Christian DUSSARRAT, Jean-Francois DE MARNEFFE, Remi DUSSART, Thomas TILLOCHER
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Patent number: 10861678Abstract: A plasma etching apparatus includes a second electrode configured to support a target substrate thereon, a second RF power supply unit configured to apply a second RF power for providing a bias for ion attraction to the second electrode, and a control system including and an RF controller. The RF controller is configured to switch the second RF power supply unit between a continuous mode that executes continuous supply of the second RF power at a constant power level and a power modulation mode that executes modulation of the second RF power between a first power and a second power larger than the first power. The RF controller is preset to control the second RF power supply unit such that the second RF power supply unit is first operated in the continuous mode for plasma ignition and then is switched into the power modulation mode.Type: GrantFiled: December 21, 2018Date of Patent: December 8, 2020Assignee: Tokyo Electron LimitedInventors: Akira Koshiishi, Noriyuki Kobayashi, Shigeru Yoneda, Kenichi Hanawa, Shigeru Tahara, Masaru Sugimoto
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Publication number: 20200381264Abstract: A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.Type: ApplicationFiled: December 11, 2018Publication date: December 3, 2020Applicants: TOKYO ELECTRON LIMITED, UNIVERSITE D'ORLEANSInventors: Koichi YATSUDA, Kaoru MAEKAWA, Nagisa SATO, Kumiko ONO, Shigeru TAHARA, Jacques FAGUET, Remi DUSSART, Thomas TILLOCHER, Philippe LEFAUCHEUX, Gaëlle ANTOUN
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Patent number: 10825688Abstract: A method MT in an embodiment is a method for etching an etching target layer EL which is included in a wafer W and contains copper. The wafer W includes the etching target layer EL, and a mask MK provided on the etching target layer EL. In the method MT, the etching target layer EL is etched by repeatedly executing a sequence SQ including a first step of generating a plasma of a first gas in a processing container 12 of a plasma processing apparatus 10 in which the wafer W is accommodated, a second step of generating a plasma of a second gas in the processing container 12, and a third step of generating a plasma of a third gas in the processing container 12. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a mixed gas of a rare gas and hydrogen gas, and the third gas contains hydrogen gas.Type: GrantFiled: June 7, 2017Date of Patent: November 3, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Shigeru Tahara, Daisuke Urayama, Kenji Matsumoto, Hidenori Miyoshi
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Patent number: 10770308Abstract: A method for etching a ruthenium film includes a first step of etching the ruthenium film by plasma processing using oxygen-containing gas, and a second step of etching the ruthenium film by plasma processing using chlorine-containing gas. The first step and the second step are alternately performed. In the first step and the second step, the ruthenium film is etched at a target control temperature for a target processing time that are determined based on a pre-obtained relation between an etching amount per one cycle including the first step and the second step as a set, a control temperature of the ruthenium film, and processing times of each of the first step and the second step.Type: GrantFiled: March 21, 2019Date of Patent: September 8, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Shigeru Tahara, Nobuaki Seki, Takahiko Kato
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Patent number: 10626498Abstract: There is provided a method of processing a target object to be processed including a porous film and a mask. The method include supplying a first gas into a processing chamber of a plasma processing apparatus in which the target object including the porous film is accommodated, and generating a plasma of a second gas in the processing chamber to remove the mask. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the target object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas supplied into the processing chamber is greater than or equal to 20% of the saturated vapor pressure.Type: GrantFiled: April 18, 2016Date of Patent: April 21, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Shigeru Tahara, Eiichi Nishimura
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Publication number: 20200010630Abstract: A porous film sealing method and porous film sealing material are provided to seal an object to be sealed that has a porous film. The porous film sealing method of the present invention is characterized by including a first step that supplies a first material to a treatment vessel in which is stored an object to be treated that has a porous film, and the first material includes a non-aromatic fluorocarbon having 6 or more carbon atoms.Type: ApplicationFiled: March 1, 2018Publication date: January 9, 2020Inventors: Keiichiro URABE, Peng SHEN, Christian DUSSARRAT, Taiki HATTORI, Shigeru TAHARA
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Publication number: 20190295856Abstract: A method for etching a ruthenium film includes a first step of etching the ruthenium film by plasma processing using oxygen-containing gas, and a second step of etching the ruthenium film by plasma processing using chlorine-containing gas. The first step and the second step are alternately performed. In the first step and the second step, the ruthenium film is etched at a target control temperature for a target processing time that are determined based on a pre-obtained relation between an etching amount per one cycle including the first step and the second step as a set, a control temperature of the ruthenium film, and processing times of each of the first step and the second step.Type: ApplicationFiled: March 21, 2019Publication date: September 26, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Shigeru TAHARA, Nobuaki SEKI, Takahiko KATO
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Publication number: 20190272997Abstract: A method MT in an embodiment is a method for etching an etching target layer EL which is included in a wafer W and contains copper. The wafer W includes the etching target layer EL, and a mask MK provided on the etching target layer EL. In the method MT, the etching target layer EL is etched by repeatedly executing a sequence SQ including a first step of generating a plasma of a first gas in a processing container 12 of a plasma processing apparatus 10 in which the wafer W is accommodated, a second step of generating a plasma of a second gas in the processing container 12, and a third step of generating a plasma of a third gas in the processing container 12. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a mixed gas of a rare gas and hydrogen gas, and the third gas contains hydrogen gas.Type: ApplicationFiled: June 7, 2017Publication date: September 5, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Shigeru TAHARA, Daisuke URAYAMA, Kenji MATSUMOTO, Hidenori MIYOSHI