Abstract: A semiconductor laser device includes a submount and an edge-emitting semiconductor laser chip mounted to the submount by a junction-down method. The semiconductor laser chip includes a semiconductor substrate, a stacked growth layer in which m (m?1) laser resonators are formed, m P electrodes, and an N electrode. When a beam emission direction is denoted as a z-axis, a direction of the thickness of the semiconductor substrate as a y-axis, and a direction orthogonal to the z-axis and the y-axis as an x-axis, the m laser resonators are located in an area of the stacked growth layer except directly under a center of the second face of the semiconductor substrate in the x-axis direction. More preferably, the m laser resonators are located on the side opposite to the center of the second face of the semiconductor substrate when viewed from the center of the first face thereof.

Abstract: A multi-beam semiconductor laser device includes an edge-emitting first semiconductor laser chip and an edge-emitting second semiconductor laser chip. The first semiconductor laser chip and the second semiconductor laser chip are located adjacently to each other in a first direction. The first and second semiconductor laser chips each include a semiconductor substrate and a stacked growth layer including a first conductive cladding layer, a light-emitting layer, and a second conductive cladding layer formed on the semiconductor substrate. The first and second semiconductor laser chips include m (m?1) and n (n?1) laser resonators extending in a second direction orthogonal to the first direction, respectively. The m laser resonators of the first semiconductor laser chip are disposed at a position closer to a side where the second semiconductor laser chip is located adjacently than a side where the second semiconductor laser chip is not located adjacently.

Abstract: An edge-emitting multi-beam semiconductor laser device includes a layered structure including a substrate, an n-type cladding layer, a light-emitting layer, and a p-type cladding layer. The layered structure has m regions (m?2) that are adjacent in a first direction, and a sum of a height of the substrate and a height of the first conductive cladding layer is different in each of the m regions, n laser resonators (2?n?m) each having a ridge stripe structure extending in a second direction orthogonal to the first direction are formed in the n regions among the m regions, and at least two of the n laser resonators have different oscillation wavelengths among the n laser resonators.