Abstract: Disclosed is a method for removing metal contamination present on an inner wall of a fluorine-based resin used in a chemical liquid supply line that supplies a chemical liquid to a workpiece. The method includes bringing some or all of a cleaning material reactive to a metal forming the metal contamination into a gaseous state; supplying the gaseous cleaning material to the chemical liquid supply line; and removing the metal contamination by reacting the gaseous cleaning material with the metal contamination present on the inner wall of the fluorine-based resin used in the chemical liquid supply line.

Abstract: Disclosed is a method for removing metal contamination present on an inner wall of a fluorine-based resin used in a chemical liquid supply line that supplies a chemical liquid to a workpiece. The method includes bringing some or all of a cleaning material reactive to a metal forming the metal contamination into a gaseous state; supplying the gaseous cleaning material to the chemical liquid supply line; and removing the metal contamination by reacting the gaseous cleaning material with the metal contamination present on the inner wall of the fluorine-based resin used in the chemical liquid supply line.

Abstract: A substrate processing apparatus comprises a heating process chamber in which a heating process is performed for a wafer, a load lock chamber, connected to the heating process chamber, for controlling at least oxygen concentration and pressure, a transferring arm transferring the wafer between the heating process chamber and the load lock chamber, and a gate valve shielding the heating process chamber from the load lock chamber. Thus, an insulation film with high quality can be formed. In addition, the wafer is temporarily placed in the load lock chamber adjacent to the heating process chamber without need to be transferred to another unit. Thus, the transferring time period for the wafer can be shortened. In addition, footprints can be decreased.

Abstract: Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the aforesaid formation of both of the first insulating film and the second insulating film by the spin coating method can provide favorable low dielectric constant properties and good adhesion of the first insulating film and the second insulating film.

Abstract: Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the aforesaid formation of both of the first insulating film and the second insulating film by the spin coating method can provide favorable low dielectric constant properties and good adhesion of the first insulating film and the second insulating film.

Abstract: Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the aforesaid formation of both of the first insulating film and the second insulating film by the spin coating method can provide favorable low dielectric constant properties and good adhesion of the first insulating film and the second insulating film.

Abstract: A substrate processing apparatus comprises a heating process chamber in which a heating process is performed for a wafer, a load lock chamber, connected to the heating process chamber, for controlling at least oxygen concentration and pressure, a transferring arm transferring the wafer between the heating process chamber and the load lock chamber, and a gate valve shielding the heating process chamber from the load lock chamber. Thus, an insulation film with high quality can be formed. In addition, the wafer is temporarily placed in the load lock chamber adjacent to the heating process chamber without need to be transferred to another unit. Thus, the transferring time period for the wafer can be shortened. In addition, footprints can be decreased.