Abstract: The present invention relates to a metal wiring, to be formed on a flexible substrate, including a sintered body of silver particles. The sintered body constituting the metal wiring has a volume resistivity of 20 ??·cm or less, hardness of 0.38 GPa or less, and a Young's modulus of 7.0 GPa or less. A conductive sheet provided with the metal wiring can be produced by applying/calcinating, on a substrate, a metal paste containing, as a solid content, silver particles having prescribed particle size and particle size distribution, and further containing, as a conditioner, an ethyl cellulose having a number average molecular weight of 10,000 or more and 90,000 or less. The metal wiring of the present invention is excellent in bending resistance with change in electrical characteristics suppressed even through repetitive bending deformation.

Abstract: The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L1) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand L1 is represented by the following Formula 2: wherein a substituent R of the ligand L1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

Abstract: The present invention relates to a method for forming a metal pattern on a pattern formation section set on a base material. In the present invention, a substrate provided with a fluorine-containing resin layer on a surface of the base material including the pattern formation section is used. The present inventive method for forming a metal pattern includes steps of: forming a functional group on the pattern formation section; and applying a metal ink including an amine compound and a fatty acid as protective agents to the base material surface to fix the metal particles on the pattern formation section. In the present invention, a fluorine-containing resin having a surface free energy measured by the Owens-Wendt method of 13 mN/m or more and 20 mN/m or less is applied as the fluorine-containing resin layer. Further, a metal ink including ethyl cellulose as an additive is applied as the metal ink.

Abstract: The present invention relates to an organoruthenium compound raw material for a chemical deposition method. An organoruthenium compound is represented by the following Formula 1 in which a trimethylenemethane-based ligand (L1), and two carbonyl ligands and a ligand X coordinate to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand (L1) is represented by the following Formula 2. Besides, the ligand X is any one of an isocyanide ligand, a pyridine ligand, an amine ligand, an imidazole ligand, a pyridazine ligand, a pyrimidine ligand, and a pyrazine ligand. wherein a substituent R of the ligand L1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

Abstract: The present invention relates to a metal wiring, to be formed on a flexible substrate, including a sintered body of silver particles. The sintered body constituting the metal wiring has a volume resistivity of 20 ??·cm or less, hardness of 0.38 GPa or less, and a Young's modulus of 7.0 GPa or less. A conductive sheet provided with the metal wiring can be produced by applying/calcinating, on a substrate, a metal paste containing, as a solid content, silver particles having prescribed particle size and particle size distribution, and further containing, as a conditioner, an ethyl cellulose having a number average molecular weight of 10,000 or more and 90,000 or less. The metal wiring of the present invention is excellent in bending resistance with change in electrical characteristics suppressed even through repetitive bending deformation.

Abstract: The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L1) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand L1 is represented by the following Formula 2: wherein a substituent R of the ligand L1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

Abstract: The present invention relates to a raw material for chemical deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, containing a ruthenium complex represented by the following Chemical Formula 1. In Chemical Formula 1, ligands L1 and L2 coordinated to ruthenium are represented by the following Chemical Formula 2. The raw material for chemical deposition according to the present invention can be formed into a high quality thin film even if a reaction gas containing an oxygen atom is not used. wherein R1 to R12, which are substituents of the ligands L1 and L2, are each independently any one of a hydrogen atom, and a linear or branched alkyl group having a carbon number of 1 or more and 4 or less.

Abstract: The present invention relates to a method for forming a metal pattern on a pattern formation section set on a base material. In the present invention, a substrate provided with a fluorine-containing resin layer on a surface of the base material including the pattern formation section is used. The present inventive method for forming a metal pattern includes steps of: forming a functional group on the pattern formation section; and applying a metal ink including an amine compound and a fatty acid as protective agents to the base material surface to fix the metal particles on the pattern formation section. In the present invention, a fluorine-containing resin having a surface free energy measured by the Owens-Wendt method of 13 mN/m or more and 20 mN/m or less is applied as the fluorine-containing resin layer. Further, a metal ink including ethyl cellulose as an additive is applied as the metal ink.

Abstract: The present invention relates to a raw material for chemical deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, containing a ruthenium complex represented by the following Chemical Formula 1. In Chemical Formula 1, ligands L1 and L2 coordinated to ruthenium are represented by the following Chemical Formula 2. The raw material for chemical deposition according to the present invention can be formed into a high quality thin film even if a reaction gas containing an oxygen atom is not used. wherein R1 to R12, which are substituents of the ligands L1 and L2, are each independently any one of a hydrogen atom, and a linear or branched alkyl group having a carbon number of 1 or more and 4 or less.

Abstract: A raw material for vapor deposition for producing a platinum thin film or a platinum compound thin film by a vapor deposition method. The raw material for vapor deposition includes an organoplatinum compound represented by the following formula, in which a cyclopentene-amine ligand and an alkyl ligand are coordinated to divalent platinum. The organoplatinum compound of the present invention has moderate thermal stability and can respond flexibly to severe film formation conditions, including a wider film formation area, higher throughput, and the like. (In the formula, R1, R2, and R3 are each any one of a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an amino group, an imino group, a cyano group, and an isocyano group, each having 4 or less carbon atoms, and R4 and R5 are each an alkyl group having 1 or more and 3 or less carbon atoms.

Abstract: A raw material for vapor deposition for producing a platinum thin film or a platinum compound thin film by a vapor deposition method. The raw material for vapor deposition includes an organoplatinum compound represented by the following formula, in which a cyclopentene-amine ligand and an alkyl ligand are coordinated to divalent platinum. The organoplatinum compound of the present invention has moderate thermal stability and can respond flexibly to severe film formation conditions, including a wider film formation area, higher throughput, and the like. (In the formula, R1, R2, and R3 are each any one of a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an amino group, an imino group, a cyano group, and an isocyano group, each having 4 or less carbon atoms, and R4 and R5 are each an alkyl group having 1 or more and 3 or less carbon atoms.