Abstract: A method of crystallizing a semiconductor film including splitting a pulse laser beam oscillated from a laser oscillator, and synthesizing the split pulse laser beams after the split pulse laser beams have propagated through optical paths different in optical path length, modulating the synthesized pulse laser beam into a pulse laser beam by a phase modulating element, and irradiating a non-single-crystal film formed on a substrate with the laser beam to crystallize the non-single-crystal film. Splitting the pulse laser beam and synthesizing the split pulse laser beams are performed using at least three optical splitting/synthesizing units arranged in order, and include sequentially splitting one pulse laser beam split by one optical splitting/synthesizing unit by succeeding splitting/synthesizing unit, and synthesizing the other pulse laser beam split by one optical splitting/synthesizing unit with the other pulse laser beam split by preceding splitting/synthesizing unit.

Abstract: A crystal silicon array includes a crystallized unit region obtained by crystallizing at least a part of a non-single crystal semiconductor film. The crystallized unit region includes at least one square two-dimensional crystal portion having a size of 7 ?m square or more, and at least one needle crystal portion having a grain length of 3.5 ?m or more.

Abstract: A method of crystallizing a semiconductor film including splitting a pulse laser beam oscillated from a laser oscillator, and synthesizing the split pulse laser beams after the split pulse laser beams have propagated through optical paths different in optical path length, modulating the synthesized pulse laser beam into a pulse laser beam by a phase modulating element, and irradiating a non-single-crystal film formed on a substrate with the laser beam to crystallize the non-single-crystal film. Splitting the pulse laser beam and synthesizing the split pulse laser beams are performed using at least three optical splitting/synthesizing units arranged in order, and include sequentially splitting one pulse laser beam split by one optical splitting/synthesizing unit by succeeding splitting/synthesizing unit, and synthesizing the other pulse laser beam split by one optical splitting/synthesizing unit with the other pulse laser beam split by preceding splitting/synthesizing unit.

Abstract: A method of manufacturing an array substrate comprising; depositing an amorphous material on a transparent substrate; and changing the amorphous material to a polycrystalline material by irradiation of energy beams through a photo mask, the mask including a transparent region permitting the energy beams to pass through and a shutoff region surrounding the transparent region and interrupting the energy beams, wherein changing the amorphous material to the polycrystalline material includes: moving the transparent substrate by a constant distance perpendicularly to the lengthwise direction of a flat pattern projected onto the surface of the amorphous material when energy beams passing through the transparent region are irradiated onto the amorphous material; and irradiating the energy beams onto the amorphous material every time when the transparent substrate is moved.

Abstract: A method of manufacturing an array substrate comprising; depositing an amorphous material on a transparent substrate; and changing said amorphous material to a polycrystalline material by irradiation of energy beams through a photo mask, said mask including a transparent region permitting said energy beams to pass through and a shutoff region surrounding said transparent region and interrupting said energy beams, said transparent region being defined by first and second lengthwise direction lines extending substantially in parallel to each other, first and second slanting direction lines which extend from opposed ends of said lengthwise direction lines after declining by angles larger than 90 degrees to join with each other; and third and fourth slanting direction lines which extend from the other opposed ends of said lengthwise direction lines after declining by angles larger than 90 degrees to join with each other, said transparent region having a length in the extending direction of said first and second l