Abstract: According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 ?m or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.

Abstract: According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 ?m or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.

Abstract: According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 ?m or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.

Abstract: An electric cylinder includes: an outer cylinder including, on one end side, a fixing section; a rod configured to be capable of expanding and contracting in an axis direction from an opening on the one end side of the outer cylinder; a bearing provided on the other end side end and on the inside of the outer cylinder; a rotating shaft supported by the bearing and driven to rotate; a screw mechanism configured to convert a rotational motion of the rotating shaft into a linear motion of the rod and transmit the linear motion; and a distortion detecting unit provided on the outer circumference of the outer cylinder. The outer cylinder includes at least two or more division members that can be divided and combined. The distortion detecting unit is provided in one division member among the two or more division members.

Abstract: An electric cylinder system includes: an electric cylinder; and a control section that controls the electric cylinder. The electric cylinder includes: an outer cylinder; a rod configured to be capable of extending and retracting in an axis direction from an opening on one end side of the outer cylinder; a bearing provided on the inside of the outer cylinder; a rotating shaft rotatably supported by the bearing and driven to rotate with driving force of a motor; a screw mechanism that converts a rotary motion of the rotating shaft into a linear motion of the rod and transmits the linear motion; and a load detecting section that detects a load in an axis direction applied to the rod in a position where the load is transmitted from the rod through the screw mechanism. The control section controls the electric cylinder on the basis of a signal from an encoder of the motor and a signal from the load detecting section.

Abstract: A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 ?m and not more than 18 ?m by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 ?m or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.

Abstract: According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 ?m or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.

Abstract: Provided is an electron-emitting device including an insulating member and a gate stacked on a substrate. A cathode is disposed on a side surface of the insulating member. The cathode has a plurality of protrusions provided along a corner of the insulating member. The gate has a plurality of protrusions extending toward the cathode.

Abstract: A semiconductor memory includes: a first memory cell transistor including: a first floating gate electrode provided on and insulated from the substrate; and a first control gate electrode provided on and insulated from the first floating gate electrode; and a second memory cell transistor including: a second floating gate electrode provided on and insulated from the substrate, an upper surface being larger than a lower surface, and the upper surface being lower than an upper surface of the first floating gate electrode; and a second control gate electrode provided on and insulated from the second floating gate electrode.

Abstract: A semiconductor device designing method includes calculating capacitance. The semiconductor device has a semiconductor substrate, an insulator formed on the semiconductor substrate, and an electrode formed on the insulator. The capacitance is calculated under an approximation assuming a portion of the semiconductor substrate, the insulator and a portion of the electrode to be one of a conductor and a dielectric depending on electric characteristics thereof, respectively.

Abstract: A semiconductor device designing method includes calculating capacitance. The semiconductor device has a semiconductor substrate, an insulator formed on the semiconductor substrate, and an electrode formed on the insulator. The capacitance is calculated under an approximation assuming a portion of the semiconductor substrate, the insulator and a portion of the electrode to be one of a conductor and a dielectric depending on electric characteristics thereof, respectively.

Abstract: A method for designing a semiconductor device including a semiconductor substrate and an interconnect on the semiconductor substrate, with X-direction being one direction parallel to the semiconductor substrate, Y-direction being a direction parallel to the semiconductor substrate and perpendicular to the X-direction, and Z-direction being perpendicular to the semiconductor substrate, the method includes: determining a cross-sectional configuration in the X-Z direction; three-dimensionalizing the cross-sectional configuration with a range in the Y-direction being specified; and using the three-dimensionalized configuration as a model.

Abstract: A semiconductor memory includes: a first memory cell transistor including: a first floating gate electrode provided on and insulated from the substrate; and a first control gate electrode provided on and insulated from the first floating gate electrode; and a second memory cell transistor including: a second floating gate electrode provided on and insulated from the substrate, an upper surface being larger than a lower surface, and the upper surface being lower than an upper surface of the first floating gate electrode; and a second control gate electrode provided on and insulated from the second floating gate electrode.

Abstract: A dry processing apparatus includes a lower electrode for holding a substrate to be processed in a chamber, a shower head, provided to face a surface of the lower electrode, on which the substrate to be processed is placed, for supplying a process gas to the substrate to be processed, placed on the lower electrode, and a pumping channel formed to surround an outer circumference of the lower electrode, wherein a pumping gap portion for communicating a processing space formed between the lower electrode and the shower head, and the pumping channel with each other, is made such that a width of the gap portion differs between an exhaust pump side where the pumping channel is connected to an exhaust pump, and an opposite side thereto.

Abstract: A plasma processing apparatus according to the present invention includes a microwave guide for introducing a microwave, an air-tight chamber for internally setting an object to be processed, for generating a plasma by introducing the microwave introduced by the microwave guide and by supplying a reaction gas, and for processing the object by an active species generated by the plasma, a dielectric window provided between the microwave guide and the air-tight chamber, for enclosing the air-tight chamber, a top plate provided with a microwave guide port arranged with a gap maintained from the dielectric window, and cooling means provided for the top plate, for cooling heat caused by generation of the plasma, e.g., a cooling means for causing a cooling gas to flow in the gap between the dielectric window and the top plate.

Abstract: An apparatus for setting a gap of a glass panel (W) having two glass substrates (20, 21) is disclosed. It includes an annular spacer (12) for surrounding the glass panel (W), a supporting plate (11) for supporting the glass panel and the annular spacer, the width of the supporting plate being greater than that of the annular spacer, a pair of opposing columns (2, 2A) for receiving the supporting plate (11), a flexible sheet (14) disposed on the annular spacer, the width of the sheet being greater than that of the annular spacer so as to be associated with the supporting plate to enclose the glass panel, means (13, 15, 16) for defining a closed space between the supporting plate (11) and the flexible sheet (14), a passage (8) in fluid communication with the closed space, and means (9) connected to the passage for evacuating the closed space.

Abstract: An apparatus for setting a gap between glass substrates (13, 14) of a glass panel (P), wherein the glass panel is clamped by a constant force regardless of its thickness. The apparatus includes a flexible and annular movable plate (4) biased by coil springs (5, 5) toward an annular immovable plate (1) so as to clamp the glass panel (P). The immovable and movable plates (1, 4) have a first gasket (3) and a second gasket (6) respectively to clamp the glass panel (P). At an outward part of the first and second gasket a third gasket (8) is disposed between the immovable and movable plates at a level such that the distance between the bottom of the second gasket (6) and the top of the first gasket (3) before the glass panel is placed between the first and second gaskets (3, 6) is smaller than the thickness of the glass panel when the biased movable plate (4) presses the third gasket (8).

Abstract: Etching selectivity is improved in a semiconductor process using a fluorocarbon gas. An energy incident to a substrate is controlled to have a value to cause transition from etching to deposition on a silicon nitride film, ions having (CF.sub.2).sub.n.sup.+ as a major component are guided onto the substrate to perform selective etching of a silicon oxide film against the silicon nitride film.

Abstract: In a stability compensating mechanism of an electro-hydraulic servo system which includes a load-displacement detecting unit for detecting a displacement of a piston of actuator or a displacement of a load connected to the piston, and a control valve for supplying a hadraulic oil to the actuator to drive the load and in which a piston-displacement detection signal of the load-displacement detecting unit is fed as a feedback signal back to a forward circuit and the control valve is operated by a deviation signal between the feedback signal and a command signal, the stability compensating mechanism comprising a valve-displacement detecting unit for detecting a valve displacement of the control valve and outputting a valve-displacement detection signal representative of the valve displacement, and a load-pressure computing unit for computing a load pressure that is acted on the actuator due to the load, on the basis of the piston-displacement detection signal of the load-displacement detecting unit and the valve