Abstract: An integrated circuit includes multiple backside conductive layers disposed over a backside of a substrate. The multiple backside conductive layers each includes conductive segments. The conductive segments in at least one of the backside conductive layers are configured to transmit one or more power signals. The conductive segments of the multiple backside conductive layers cover select areas of the backside of the substrate, thereby leaving other areas of the backside of the substrate exposed.

Abstract: An antenna module includes an antenna box and a first connection wire. The antenna box can include a first antenna, a second antenna, a first connection terminal, a second connection terminal and a housing. The first and second antennas are located in the housing and the housing has a first opening collectively exposing a portion of the first connection terminal and a portion of the second connection terminal. Each of the first and second antennas is adapted to receive or transmit wireless signals according to one of a plurality of wireless communication standards and the first and second antennas are electrically connected to the first and second connection terminals, respectively. The wireless communication standards can be different from each other.

Abstract: An anti-virus chip includes a first connection terminal, a second connection terminal, a detection unit and a processing unit. The first connection terminal and the second connection terminal are respectively coupled to a connection port and a system circuit of an electronic device. The detection unit detects whether the connection port is connected to an external device via the first connection terminal. When the detection unit detects that the connection port is connected to the external device, the processing unit performs a virus-scan program on the external device to determine whether a virus exists in the external device. When determining that a virus does not exist in the external device, the processing unit establishes a first transmission path between the first connection terminal and the second connection terminal. When determining that a virus exists in the external device, the processing unit does not establish the first transmission path.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package includes a molded semiconductor device, a first redistribution structure, and conductive vias. The molded semiconductor device comprises a sensor die with a first surface and a second surface opposite the first surface, wherein the sensor die has an input/output region and a sensing region at the first surface. The first redistribution structure is disposed on the first surface of the sensor die, wherein the first redistribution structure covers the input/output region and exposes the sensing region, and the first redistribution structure comprises a conductive layer having a redistribution pattern and a ring structure. The redistribution pattern is electrically connected with the sensor die. The ring structure surrounds the sensing region and is separated from the redistribution pattern, wherein the ring structure is closer to the sensing region than the redistribution pattern.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: The present disclosure relates to a method for forming a mark, a packaging method for a semiconductor device, and a semiconductor device having the mark, wherein the marking material is a polymer compound and the light transmittance of the marking material is less than 50%, which is suitable for forming the mark on the semiconductor device by laser sintering, and the marking material is sintered to make the resin cross-link and cure to form a cured product. In addition, in one embodiment, the cured product formed by the marking material can be used as a deflector to guide the flow of the underfill and control the flow rate of underfill, so as to effectively solve the problem of uneven flow rate of the underfill.

Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.

Abstract: A fault detection method, includes the following steps. A target sequence is received, the target sequence includes several data. A first moving average operation is performed on the target sequence to establish a first moving average sequence. A second moving average operation is performed on the target sequence to establish a second moving average sequence. A difference operation between the first moving average sequence and the second moving average sequence is performed to obtain a difference sequence, the difference sequence includes several difference values. An upper limit value is set. When one of the difference values is greater than the upper limit value, the target sequence is determines as abnormal.

Abstract: A method of fabricating a device includes providing a fin having an epitaxial layer stack with a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes exposing lateral surfaces of the plurality of semiconductor channel layers and the plurality of dummy layers within a source/drain region of the semiconductor device. In some examples, the method further includes etching the exposed lateral surfaces of the plurality of dummy layers to form recesses and forming an inner spacer within each of the recesses, where the inner spacer includes a sidewall profile having a convex shape. In some cases, and after forming the inner spacer, the method further includes performing a sheet trim process to tune the sidewall profile of the inner spacer such that the convex shape of the sidewall profile becomes a substantially vertical sidewall surface after the sheet trim process.

Abstract: A semiconductor device includes a substrate, two source/drain features over the substrate, channel layers connecting the two source/drain features, and a gate structure wrapping around each of the channel layers. Each of the two source/drain features include a first epitaxial layer, a second epitaxial layer over the first epitaxial layer, and a third epitaxial layer on inner surfaces of the second epitaxial layer. The channel layers directly interface with the second epitaxial layers and are separated from the third epitaxial layers by the second epitaxial layers. The first epitaxial layers include a first semiconductor material with a first dopant. The second epitaxial layers include the first semiconductor material with a second dopant. The second dopant has a higher mobility than the first dopant.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a device region and a seal ring region surrounding the device region. The semiconductor device structure includes a seal ring structure over the seal ring region. The seal ring structure surrounds the device region. The semiconductor device structure includes a bonding film over the seal ring structure and the substrate. The semiconductor device structure includes a bonding pad embedded in the bonding film. The bonding pad overlaps the seal ring structure along an axis perpendicular to a first top surface of the substrate, and a second top surface of the bonding pad is substantially level with a third top surface of the bonding film.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

Abstract: The present invention provides a novel compound for effectively preventing nerve damage and protecting nerves, and a preparation method thereof. Besides, the present invention also provides a pharmaceutical composition comprising the novel compound, and a use of the novel compound for preventing nerve damage and protecting nerves.

Abstract: A flexible charging pad and a manufacturing method thereof are provided. The manufacturing method of the flexible charging pad includes: providing a double-sided tape to form an adhesion layer, one of two isolation papers is attached on the first adhesion surface, and another of the two isolation papers is attached on the second adhesion surface; removing the isolation paper attached on the first adhesion surface, and attaching a conductor on the first adhesion surface; attaching a first pad layer on the first adhesion surface to cover the conductor, the conductor is disposed between the first pad layer and the adhesion layer; disposing an adhesive to cover the conductor and the first pad layer, and to form a molded layer.

Abstract: The present disclosure provides an electronic device. The electronic device includes a first transceiving element, a second transceiving element disposed over the first transceiving element, and a radiating structure configured to radiate a first EM wave having a lower frequency and a second EM wave having a higher frequency. The first transceiving element and the second transceiving element are collectively configured to provide a higher gain or bandwidth for the first EM wave than for the second EM wave.

Abstract: A method of manufacturing a plurality of via structures includes providing an integrated circuit (IC) photo mask including via features and assist features positioned exclusively along alternating diagonal grid lines of a grid, aligning the IC photo mask with first metal segments of a first metal layer of a semiconductor substrate, the first metal segments having a first spacing corresponding to a first pitch of the grid, performing one or more photolithography processes including the IC photo mask, thereby defining via structure locations corresponding to the via features, and forming via structures at the defined via structure locations.

Abstract: Methods for determining a signal quality index for bioinformation measurement are disclosed herein. The method can include detecting a light intensity when the transmitter module is in an off state. The method can include comparing the light intensity to a first threshold. The method can include decreasing the gain of the receiver module when the light intensity is greater than the first threshold. The method can include comparing the light intensity to a second threshold when the light intensity is less than the first threshold. The method can include decreasing the gain of the receiver module when the light intensity is greater than the second threshold. The method can include comparing the light intensity to a third threshold when the light intensity is less than the second threshold. The method can include increasing the gain of the receiver module when the light intensity is less than the third threshold.

Abstract: A device die including a first semiconductor die, a second semiconductor die, an anti-arcing layer and a first insulating encapsulant is provided. The second semiconductor die is stacked over and electrically connected to the first semiconductor die. The anti-arcing layer is in contact with the second semiconductor die. The first insulating encapsulant is disposed over the first semiconductor die and laterally encapsulates the second semiconductor die. Furthermore, methods for fabricating device dies are provided.

Abstract: A method of manufacturing a semiconductor device, including: forming a plurality of gate strips, wherein each gate strip is arranged to be a gate terminal of a transistor; forming a plurality of first metal strips above the plurality of gate strips; and forming a plurality of second metal strips above the plurality of first metal strips, wherein the plurality of second metal strips are co-planar, and each second metal strip and one of the first metal strips are crisscrossed from top view; wherein a length between two adjacent gate strips is twice as a length between two adjacent second metal strips, and a length of said one of the first metal strips is smaller than two and a half times as the length between two adjacent gate strips.

Abstract: Video processing methods and apparatuses in a video encoding or decoding system for processing out-of-bounds nodes in a current picture. An out-of-bounds node is a coding tree node with a block region across a current picture boundary. The video processing method or apparatus determines an inferred splitting type, applies the inferred splitting type to split the out-of-bounds node into child blocks, adaptively splits each child block into one or multiple leaf blocks, and encodes or decodes the leaf blocks in the out-of-bounds node inside the current picture. The inferred splitting type for partitioning out-of-bounds nodes in an inter slice, picture, or tile is the same as the inferred splitting type for partitioning out-of-bounds nodes in an intra slice, picture, or tile.