Patents by Inventor Shih-Chang Lin
Shih-Chang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145298Abstract: Structures with doping free connections and methods of fabrication are provided. An exemplary structure includes a substrate; a first region of a first conductivity type formed in the substrate; an overlying layer located over the substrate; a well region of a second conductivity type formed in the overlying layer; a conductive plug laterally adjacent to the well region and extending through the overlying layer to electrically contact with the first region; and a passivation layer located between the conductive plug and the well region.Type: ApplicationFiled: February 17, 2023Publication date: May 2, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Min Huang, Tzu-Jui Wang, Jung-I Lin, Hung-Chang Chien, Kuan-Chieh Huang, Tzu-Hsuan Hsu, Chen-Jong Wang
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Patent number: 11967594Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a stack of semiconductor layers spaced apart from and aligned with each other, a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers, and a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature. The second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers. The structure further includes a first dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature and a first liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The first liner is in contact with the first source/drain epitaxial feature and the first dielectric material.Type: GrantFiled: August 10, 2022Date of Patent: April 23, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Cheng Chen, Zhi-Chang Lin, Jung-Hung Chang, Lo Heng Chang, Chien Ning Yao, Kuo-Cheng Chiang, Chih-Hao Wang
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Publication number: 20240127754Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.Type: ApplicationFiled: December 7, 2023Publication date: April 18, 2024Inventors: Chin-Wei Lin, Hung Sheng Lin, Shih Chang Chang, Shinya Ono
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Patent number: 11940388Abstract: Example methods are provided to improve placement of an adaptor (210,220) to a mobile computing device (100) to measure a test strip (221) coupled to the adaptor (220) with a camera (104) and a screen (108) on a face of the mobile computing device (100). The method may include displaying a light area on a first portion of the screen (108). The first portion may be adjacent to the camera (104). The light area and the camera (104) may be aligned with a key area of the test strip (221) so that the camera (104) is configured to capture an image of the key area. The method may further include providing first guiding information for a user to place the adaptor (210,220) to the mobile computing device (100) according to a position of the light area on the screen (108).Type: GrantFiled: March 16, 2018Date of Patent: March 26, 2024Assignee: IXENSOR CO., LTD.Inventors: Yenyu Chen, An Cheng Chang, Tai I Chen, Su Tung Yang, Chih Jung Hsu, Chun Cheng Lin, Min Han Wang, Shih Hao Chiu
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Publication number: 20240096895Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.Type: ApplicationFiled: November 29, 2023Publication date: March 21, 2024Inventors: Jui-Chien Huang, Shih-Cheng Chen, Chih-Hao Wang, Kuo-Cheng Chiang, Zhi-Chang Lin, Jung-Hung Chang, Lo-Heng Chang, Shi Ning Ju, Guan-Lin Chen
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Patent number: 11935981Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.Type: GrantFiled: June 30, 2021Date of Patent: March 19, 2024Assignee: EPISTAR CORPORATIONInventors: Chu-Jih Su, Chia-Hsiang Chou, Wei-Chih Peng, Wen-Luh Liao, Chao-Shun Huang, Hsuan-Le Lin, Shih-Chang Lee, Mei Chun Liu, Chen Ou
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Patent number: 11934027Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.Type: GrantFiled: June 21, 2022Date of Patent: March 19, 2024Assignee: TDK TAIWAN CORP.Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
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Patent number: 11935969Abstract: A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.Type: GrantFiled: November 9, 2020Date of Patent: March 19, 2024Assignee: EPISTAR CORPORATIONInventors: Shih-Chang Lee, Shiuan-Leh Lin, I-Hung Chen, Chu-Jih Su, Chao-Shun Huang
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Patent number: 11929287Abstract: The present disclosure describes a semiconductor structure with a dielectric liner. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a stacked fin structure, a fin bottom portion below the stacked fin structure, and an isolation layer between the stacked fin structure and the bottom fin portion. The semiconductor structure further includes a dielectric liner in contact with an end of the stacked fin structure and a spacer structure in contact with the dielectric liner.Type: GrantFiled: April 23, 2021Date of Patent: March 12, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Zhi-Chang Lin, Shih-Cheng Chen, Kuo-Cheng Chiang, Kuan-Ting Pan, Jung-Hung Chang, Lo-Heng Chang, Chien Ning Yao
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Publication number: 20240079524Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.Type: ApplicationFiled: September 6, 2023Publication date: March 7, 2024Inventors: Wei-Jen HSUEH, Shih-Chang LEE, Kuo-Feng HUANG, Wen-Luh LIAO, Jiong-Chaso SU, Yi-Chieh LIN, Hsuan-Le LIN
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Publication number: 20240077804Abstract: A method includes forming a test pattern and a reference pattern in an absorption layer of a photomask structure. The test pattern has a first trench and a second trench, the reference pattern has a third trench and a fourth trench, the test pattern and the reference pattern have substantially the same dimension in a top view, and the second trench is deeper than the first trench, the third trench, and the fourth trench. The method further includes emitting a light beam to the test pattern to obtain a first interference pattern reflected from the test pattern, emitting the light beam to the reference pattern to obtain a second interference pattern reflected from the reference pattern; and comparing the first interference pattern with the second interference pattern to obtain a measured complex refractive index of the absorption layer.Type: ApplicationFiled: September 1, 2022Publication date: March 7, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ping-Hsun LIN, Chien-Cheng CHEN, Shih Ju HUANG, Pei-Cheng HSU, Ta-Cheng LIEN, Hsin-Chang LEE
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Publication number: 20240070582Abstract: An apparatus for estimating a fair value of a SPP includes a sunshine simulation system for generating a peak sun hour; a photovoltaic (PV) yield system for measuring a total power loss rate and generating an estimated energy-production-hours database; and a financial pricing system for generating a series of cash flows and discount factors. The financial pricing system computes a series of present values which are the product of the cash flows and the discount factors, and sums up all the present values to obtain an estimated value of the SPP. Since the apparatus for estimating SPP value takes the real power generation condition of the SPP and the real market economic condition into consideration, so that the apparatus can generate a pricing result even closer to the real market.Type: ApplicationFiled: August 26, 2022Publication date: February 29, 2024Applicant: Guang Teng Renewable Energy Co., Ltd.Inventors: An-Hsing CHANG, Ming-Che CHUANG, Shih-Kuei LIN, Che-Yi YIN
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Patent number: 11916122Abstract: A method for forming a gate all around transistor includes forming a plurality of semiconductor nanosheets. The method includes forming a cladding inner spacer between a source region of the transistor and a gate region of the transistor. The method includes forming sheet inner spacers between the semiconductor nanosheets in a separate deposition process from the cladding inner spacer.Type: GrantFiled: July 8, 2021Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Zhi-Chang Lin, Kuan-Ting Pan, Shih-Cheng Chen, Jung-Hung Chang, Lo-Heng Chang, Chien-Ning Yao, Kuo-Cheng Chiang
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Publication number: 20190163061Abstract: The present invention relates to a polyimide precursor and a lithography pattern formed by the same. The polyimide precursor has a repeating unit having a structure of formula (I): in the formula (I), Ar represents a tetravalent group derivated from a tetracarboxylic dianhydride compound; R1 represents a divalent group derivated from a diamine compound; and R2 independently represent a thermal-crosslinking group, a photosensitive-crosslinking group, or a hydrogen atom. The polyimide precursor has an excellent pattern-forming ability.Type: ApplicationFiled: February 28, 2018Publication date: May 30, 2019Inventors: Chi-Shian CHEN, Bin-Ling TSAI, Yu-Pei CHEN, Chiao-Pei CHEN, Yu-Fu LIAO, Shih-Chang LIN, Chen-Ni CHEN, Tsung-Tai HUNG, Chiu-Feng CHEN
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Patent number: 10130042Abstract: A control device of a cutting tool formed by a first component and a second component pivotally connected to each other is pivotally connected to the second component. The control device can be pushed to act on the second component. The cutting tool performs multi-stage or one-time cutting according to the control device being pushed to the required position. Moreover, the first component and the second component are close to or away from each other under control of the control device.Type: GrantFiled: January 29, 2016Date of Patent: November 20, 2018Assignee: BOR SHENG INDUSTRIAL CO., LTD.Inventor: Shih-Chang Lin
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Publication number: 20180188651Abstract: A photosensitive composition is provided. The photosensitive composition includes a composition for forming polyimide, a photoinitiator, a photo cross-linking agent, and a thermal cross-linking agent. The composition for forming polyimide includes a diamine monomer component, an anhydride monomer component, and a polyimide modifier. The diamine monomer component includes a long-chain aliphatic diamine monomer, a carboxylic acid-containing diamine monomer, and a triazole compound. The anhydride monomer component includes a dianhydride monomer and a monoanhydride monomer. The polyimide modifier has a double bond and an epoxy group.Type: ApplicationFiled: March 6, 2017Publication date: July 5, 2018Applicant: TAIFLEX Scientific Co., Ltd.Inventors: Shih-Chang Lin, Yi-Ming Chen, Chiu-Feng Chen, Chun-Yi Kuo
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Patent number: 9848539Abstract: A control device of a cutting tool is revealed. For performing cutting, opening and closing, the cutting tool includes a pair of handles pivotally connected to each other and each handle having a blade. The control device is set on the handle and involved in opening or closing of the blades of the cutting tool. The control device includes a first component and a second component. The first and the second components are connected to and locked with each other tightly by a fastening structure. The control device is disposed on the handle closely, without loosening from the handle.Type: GrantFiled: December 30, 2015Date of Patent: December 26, 2017Assignee: BOR SHENG INDUSTRIAL CO., LTD.Inventor: Shih-Chang Lin
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Publication number: 20170215346Abstract: A control device of a cutting tool for general use or gardening is revealed. The cutting tool, formed by a first component and a second component pivotally connected to each other, can be opened or closed gradually for cutting. The control device is pivotally connected to the second component. The control device can be pushed to act on the second component. The cutting tool performs multi-stage or one-time cutting according to the control device being pushed to the required position. Moreover, the first component and the second component are close to or away from each other under control of the control device.Type: ApplicationFiled: January 29, 2016Publication date: August 3, 2017Inventor: Shih-Chang Lin
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Publication number: 20170171971Abstract: A polyimide is provided. The polyimide includes a repeating unit represented by formula 1: wherein Ar is a tetravalent residue obtainable from an aromatic tetracarboxylic dianhydride; and A includes wherein R17 is a single bond or a C1-C18 divalent linking group.Type: ApplicationFiled: March 1, 2016Publication date: June 15, 2017Inventors: Shih-Chang Lin, Chiu-Feng Chen, Sheng-Chin Lin, Ching-Hung Huang, Kuang-Ting Hsueh
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Patent number: D815501Type: GrantFiled: January 29, 2016Date of Patent: April 17, 2018Assignee: BOR SHENG INDUSTRIAL CO., LTD.Inventors: Hsueh Hsin Huang, Shih-Chang Lin