Abstract: Structures with doping free connections and methods of fabrication are provided. An exemplary structure includes a substrate; a first region of a first conductivity type formed in the substrate; an overlying layer located over the substrate; a well region of a second conductivity type formed in the overlying layer; a conductive plug laterally adjacent to the well region and extending through the overlying layer to electrically contact with the first region; and a passivation layer located between the conductive plug and the well region.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a stack of semiconductor layers spaced apart from and aligned with each other, a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers, and a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature. The second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers. The structure further includes a first dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature and a first liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The first liner is in contact with the first source/drain epitaxial feature and the first dielectric material.

Abstract: Example methods are provided to improve placement of an adaptor (210,220) to a mobile computing device (100) to measure a test strip (221) coupled to the adaptor (220) with a camera (104) and a screen (108) on a face of the mobile computing device (100). The method may include displaying a light area on a first portion of the screen (108). The first portion may be adjacent to the camera (104). The light area and the camera (104) may be aligned with a key area of the test strip (221) so that the camera (104) is configured to capture an image of the key area. The method may further include providing first guiding information for a user to place the adaptor (210,220) to the mobile computing device (100) according to a position of the light area on the screen (108).

Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A method of qualifying semiconductor wafer processing includes: illuminating a semiconductor wafer simultaneously with source light having wavelengths in a plurality of wavebands, including at least a first waveband and a second waveband, the second waveband being different from the first waveband; separating light reflected from the semiconductor wafer as a result of said illuminating, the separating dividing the reflected light according to waveband; generating a first image of the semiconductor wafer based on reflected light separated into the first waveband; and, generating a second image of the semiconductor wafer base on reflected light separated into the second waveband.

Abstract: A system configured to detect defects on a wafer is provided. The system includes an inspection subsystem configured to acquire scan data of a target region on the wafer. The target region comprises a plurality of circuit layout streaming data on the wafer and the defects in proximity to the circuit layout streaming data or in the circuit layout streaming data. A graphic design subsystem (GDS) is configured to store a map of circuit layout streaming data of the wafer. A software tool for designing electronic systems is configured to label the scan data with attributes from the map of circuit layout streaming data. A decision subsystem is configured to qualify the process based on a predetermined defect level from the labeled scan data by using a multi-dimension clustering method, wherein the predetermined defect level is an accumulated defect formed on the semiconductor wafer during processing.

Abstract: A wide area atmospheric pressure plasma device includes a metal casing, a metal electrode, and a dielectric layer. The metal casing includes a chamber, at least one gas channel, and a plasma jet channel, in which the plasma jet channel is located under the chamber. The metal electrode is disposed within the chamber, is adjacent to the plasma jet channel, and extends along a length direction of the plasma jet channel. An outlet of the gas channel is adjacent to a bottom of the metal electrode, such that a working gas in the gas channel is sprayed towards the bottom of the metal electrode. The dielectric layer wraps the metal electrode.

Abstract: A light distribution module configured to control a light distribution of a light source is provided. The light distribution module includes a lens and an optical cover. The lens has a first light-incident surface, a first light-emitting surface opposite to the first light-incident surface, and an accommodating recess located at a side of the first light-incident surface, wherein the accommodating recess is configured to contain the light source. The optical cover covers the lens and has a second light-incident surface and a second light-emitting surface opposite to the second light-incident surface, wherein the second light-incident surface is located between the first light-emitting surface and the second light-emitting surface, and the second light-incident surface has a plurality of sub-curved surfaces. Boundaries between adjacent sub-curved surfaces are bent-shaped with respect to the adjacent sub-curved surfaces.

Abstract: A light distribution module configured to control a light distribution of a light source is provided. The light distribution module includes a lens and an optical cover. The lens has a first light-incident surface, a first light-emitting surface opposite to the first light-incident surface, and an accommodating recess located at a side of the first light-incident surface, wherein the accommodating recess is configured to contain the light source. The optical cover covers the lens and has a second light-incident surface and a second light-emitting surface opposite to the second light-incident surface, wherein the second light-incident surface is located between the first light-emitting surface and the second light-emitting surface, and the second light-incident surface has a plurality of sub-curved surfaces. Boundaries between adjacent sub-curved surfaces are bent-shaped with respect to the adjacent sub-curved surfaces.

Abstract: A light distribution module configured to control a light distribution of a light source is provided. The light distribution module includes a lens and an optical cover. The lens has a first light-incident surface, a first light-emitting surface opposite to the first light-incident surface, and an accommodating recess located at a side of the first light-incident surface, wherein the accommodating recess is configured to contain the light source. The optical cover covers the lens and has a second light-incident surface and a second light-emitting surface opposite to the second light-incident surface, wherein the second light-incident surface is located between the first light-emitting surface and the second light-emitting surface, and the second light-incident surface has a plurality of sub-curved surfaces. Boundaries between adjacent sub-curved surfaces are bent-shaped with respect to the adjacent sub-curved surfaces.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: Disclosed is a drive integrated circuit for controlling a traffic light. The drive IC comprises an input end and an output end, an input low-voltage control circuit, a gain control circuit, a driving circuit, an impedance loop and a phase detection circuit. The input low-voltage control circuit connects to the input end of the drive IC, and receives a first external signal. The gain control circuit connects to the input low-voltage control circuit. The driving circuit connects to the gain control circuit. The impedance loop connects to the input end to detect whether the traffic light is damaged. The phase detection circuit connects to the input end to detect a phase difference of the driving signal. By integrating circuits having different detection and control functions in one single chip, the cost of the drive IC decreases and the traffic light can have a less thick structure.

Abstract: A light distribution module configured to control a light distribution of a light source is provided. The light distribution module includes a lens and an optical cover. The lens has a first light-incident surface, a first light-emitting surface opposite to the first light-incident surface, and an accommodating recess located at a side of the first light-incident surface, wherein the accommodating recess is configured to contain the light source. The optical cover covers the lens and has a second light-incident surface and a second light-emitting surface opposite to the second light-incident surface, wherein the second light-incident surface is located between the first light-emitting surface and the second light-emitting surface, and the second light-incident surface has a plurality of sub-curved surfaces. Boundaries between adjacent sub-curved surfaces are bent-shaped with respect to the adjacent sub-curved surfaces.

Abstract: A lighting device including an upper casing, a light emitting diode (LED) light source, a first reflective plate and a packaging lens is disclosed. The upper casing includes a supporting member. The LED light source is disposed on the supporting member. The first reflective plate is disposed on the supporting member and is separated from the LED light source by a first distance. The first reflective plate and a normal line of a supporting surface of the supporting member form a first angle which is greater than 0° and smaller than 40°. The packaging lens is disposed on the supporting member and covers the LED light source and the first reflective plate.

Abstract: An optical modeling method and an electronic apparatus for building a target lens model are provided. The optical modeling method includes: calculating and generating a first lens model according to a spatial intensity distribution of a light source and a first target intensity distribution; introducing an external shape of the light source and calculating a first intensity distribution according to the spatial intensity distribution and the first lens model; obtaining a first difference level by comparing the first target intensity distribution and the first intensity distribution; taking the first lens model as the target lens model if the first difference level is not greater than preset threshold; otherwise, correcting the first target intensity distribution to a second target intensity distribution according to the first difference level, and calculating and generating a second lens model according to the spatial intensity distribution of the light source and the second target intensity distribution.

Abstract: A lighting device including an upper casing, a light emitting diode (LED) light source, a first reflective plate and a packaging lens is disclosed. The upper casing includes a supporting member. The LED light source is disposed on the supporting member. The first reflective plate is disposed on the supporting member and is separated from the LED light source by a first distance. The first reflective plate and a normal line of a supporting surface of the supporting member form a first angle which is greater than 0° and smaller than 40°. The packaging lens is disposed on the supporting member and covers the LED light source and the first reflective plate.