Abstract: A semiconductor device includes a first metal layer, a second metal layer, and an inter-metal dielectric layer disposed between the first metal layer and the second metal layer. The inter-metal dielectric layer includes: a first dielectric layer disposed on the first metal layer and in direct contact with the first metal layer, wherein the first dielectric layer has a stress value less than 0; a second dielectric layer disposed on the first dielectric layer, wherein the second dielectric layer has a stress value greater than 0; and a third dielectric layer disposed on the second dielectric layer, wherein the third dielectric layer has a stress value less than 0. A thickness of the third dielectric layer is greater than a thickness of the second dielectric layer, and the thickness of the second dielectric layer is greater than a thickness of the first dielectric layer.

Abstract: The present invention relates to a combination type of floating cylinder for swimming and storing articles comprising at least at least a base floating cylinder, and a secondary floating cylinder, both being with a hollow interior, and a plurality of fins. The surrounding surface of the floating cylinder is provided with at least a dovetailing seat. One end of the floating cylinder is provided with a hook, and the other end is provided with a removable cap body which can be opened and shut for the storage of articles or articles within the interior of the base floating cylinder or the secondary floating cylinder. A plurality of dovetailing seats are provided along the surrounding surface of a cylindrical base, one end of the dovetailing seat being an urging cap which can tightly fasten the dovetailing seats, and the other end of the dovetailing seat is provided with a hook.