Abstract: A semiconductor device is provided. The semiconductor device comprises a first semiconductor die comprising a first capacitor, and a second semiconductor die in contact with the first semiconductor die and comprises a diode. The first semiconductor die and the second semiconductor die are arranged along a first direction, and a diode is configured to direct electrons accumulated at the first capacitor to a ground.

Abstract: Some embodiments relate an integrated circuit (IC) including a first substrate. An interconnect structure is disposed over the first substrate. The interconnect structure includes a plurality of metal features that are stacked over one another. A lowermost metal feature of the plurality of metal features is closest to the first substrate, an uppermost metal feature of the plurality of metal features is furthest from the first substrate, and intermediate metal features are disposed between the lowermost metal feature and the uppermost metal feature. A recess extends into the interconnect structure and terminates at a bond pad. A lower surface of the bond pad directly contacts an upper surface of the lowermost metal feature.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.

Abstract: A semiconductor device structure includes a source/drain feature comprising a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface. The structure also includes a dielectric layer having a continuous surface in contact with the entire second surface of the source/drain feature, a semiconductor layer having a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface, wherein the sidewall of the semiconductor layer is in contact with the sidewall of the source/drain feature. The structure also includes a gate dielectric layer in contact with the continuous surface of the dielectric layer and the second surface of the semiconductor layer, and a gate electrode layer surrounding a portion of the semiconductor layer.

Abstract: A semiconductor device is provided. The semiconductor device comprises a first semiconductor die comprising a first capacitor, and a second semiconductor die in contact with the first semiconductor die and comprises a diode. The first semiconductor die and the second semiconductor die are arranged along a first direction, and a diode is configured to direct electrons accumulated at the first capacitor to a ground.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: A rapid shaping and aseptically filling device has an extrusion mold head, two mold mechanisms, and at least one filling needle. The extrusion mold head has an annular outlet, a needle passing through hole, and a shaping area defined below the annular outlet. The annular outlet forms a plastic blank. The two mold mechanisms are respectively located in two sides of the shaping area. Each of the two mold mechanisms is annular and has multiple molds. The molds are capable of moving circularly and sequentially passing the shaping area to engage with each other and tightly clamp the plastic blank. The at least one filling needle is mounted in the needle passing through hole and is located in a center of the plastic blank. A bottom end of the at least one filling needle is located above top two of the molds which engage with each other.

Abstract: A method for performing image processing is provided. In the method, an input image is obtained. A detection of at least one human is performed based on the input image. In a case that only one human is detected based on the input image, a determination of an output region within the input image is performed based on a face orientation of the only one human detected, and an output image is generated based on the output region within the input image. In addition, an image processing device and a non-transitory computer-readable medium using the method are also provided.

Abstract: The disclosed system has particular applications to image archives and reediting. Given an image of an article having graphic objects including texts and pictures, the disclosed system first distinguishes graphic objects from the background by segmenting the image so as to produce an object image comprising a foreground, wherein the foreground corresponds to the graphic objects in the image. With respect to the foreground, the disclosed system “repaints” those spaces previously occupied by the graphic objects, referred to as object spaces, with the background color in the image as such the background continuity is preserved when the graphic objects are rendered and subsequently superimposed onto the repainted background. To account for various backgrounds, the disclosed system uses a point-wise patching approach followed by a one-dimensional patching approach if the object spaces contain two different colors.

Abstract: The disclosed system has particular applications to image archives and reediting. Given an image of an article having graphic objects including texts and pictures, the disclosed system first distinguishes graphic objects from the background by segmenting the image so as to produce an object image comprising a foreground, wherein the foreground corresponds to the graphic objects in the image. With respect to the foreground, the disclosed system “repaints” those spaces previously occupied by the graphic objects, referred to as object spaces, with the background color in the image as such the background continuity is preserved when the graphic objects are rendered and subsequently superimposed onto the repainted background. To account for various backgrounds, the disclosed system uses a point-wise patching approach followed by a one-dimensional patching approach if the object spaces contain two different colors.