Abstract: A method of in situ reactive gas plasma treatment is disclosed. The method is capable of removing a residue remained in a metal etching chamber after the metal etching process to improve the yield of the wafer and the particle performance of the metal etching chamber. The method includes the steps of (a) vactuating the metal etching chamber after the metal etching process, (b) introducing a reactive gas to the metal etching chamber, and (c) applying an electromagnetic power to the metal etching chamber for producing a plasma derived from the reactive gas to remove the residue inside the metal etching chamber and/or on the wafer.

Abstract: An EPROM cell and a method that includes a gate structure having a sidewall spacer. The sidewall spacer is made by way of an amorphous or polycrystalline silicon layer, which is converted into an insulating layer such as silicon dioxide. Deposition of the amorphous or polycrystalline silicon layer is more accurate and produces a more uniform layer than conventional dielectric layer deposition.

Abstract: A method for polysilicon etching with HBr, He and He/O2 as reactive gas source is disclosed. A chamber pressure greater than 30 mTorr is held to achieve high selectivity to polysilicon over silicon oxide. A total flow rate of HBr and He greater than 420 sccm is provided. Under this condition of the total flow rate of HBr and He, the flow rates of HBr and He are respectively held in the range of about 180-280 sccm, and the flow rate of He/O2 is at about 5-10 sccm.

Abstract: A method for preventing corrosion and particulate in a load-lock chamber is disclosed. The load-lock chamber is adjourning with an etching chamber and a wafer transferred module, each time a wafer in the cassette is transferred into the etching chamber for etching by a transfer arm. After that, the etched wafer is withdrawn by the same way to the cassette. The load-lock chamber comprising an outlet of N2-purge tube therein for venting the vacuum in the load-lock chamber to the surrounding. The method comprising at least a step of coupling heating means to the N2-purge tube, or heating N2 gases before injecting into the N2-purge tube so that the temperature of the N2-purge tube will at least not lower than the temperature of an environment within the load-lock chamber.

Abstract: A gas ring with curved surface on the edge of the gas-guiding trench of a gas ring apparatus is disclosed. The apparatus includes a ring-shaped body located on bottom of an etch chamber, wherein the ring-shaped body has a ring-shaped gas-guiding trench formed on the bottom surface and inside of the ring-shaped body, and wherein the intersection of sidewall of the ring-shaped gas-guiding trench and the bottom surface of the ring-shaped body has a curved bending surface. At least one gas hole extends from the top surface of the ring-shaped body to the ring-shaped gas-guiding trench. The apparatus also includes a first ring-shaped seal and a second ring-shaped seal situated on the bottom surface of the ring-shaped body. A blocking layer is formed to cover the surface of the ring-shaped body.

Abstract: A method of forming a trench power metal-oxide semiconductor (MOS) transistor over a semiconductor substrate is proposed in the present invention. First, a pad oxide layer is formed on said substrate, a masking layer is then formed on the pad oxide layer. Next, the masking layer and the pad oxide layer are defined the trench pattern, and the substrate is etched to form the trench structure. A gate oxide layer is formed on the outer surface of the trench structure. Then, a conducting layer is fill into said trench structure for serving as a gate structure. The doped areas are formed in the substrate to serve as source structures. Next, the sidewall spacers are formed on sidewalls of the masking layer and the pad oxide layer. A field oxide layer is then formed on the conducting layer.