Patents by Inventor Shih-Chung Chou

Shih-Chung Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240088154
    Abstract: The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed directly on an upper surface of the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Inventors: Yi-Huan Chen, Chien-Chih Chou, Alexander Kalnitsky, Kong-Beng Thei, Ming Chyi Liu, Shih-Chung Hsiao, Jhih-Bin Chen
  • Patent number: 11103776
    Abstract: An external control device for a game controller is provided, including a casing, a second adapter, a mode selector, a memory, and a conversion circuit. The second adapter is provided for being connected to the first adapter of the game controller. The mode selector is provided for outputting one of selection signals. The memory stores different encode data. The conversion circuit selects encode data according to the selection signals output from the mode selector, and encodes and converts the button signal into a pre-formatted wireless signal according to the selected encode data, and then sends the pre-formatted wireless signal through a wireless signal transmitting circuit. Thus, the button signal of the game controller is converted into a wireless signal corresponding to another game console providing another game control device integrating the game controller with the external control device, which has the same effect.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: August 31, 2021
    Assignee: Zeroplus Technology CO., LTD.
    Inventors: Wen-Chung Chang, Shih-Chung Chou, Yi-Chun Shih, Tsung-Chih Huang
  • Publication number: 20200222799
    Abstract: An external control device for a game controller is provided, including a casing, a second adapter, a mode selector, a memory, and a conversion circuit. The second adapter is provided for being connected to the first adapter of the game controller. The mode selector is provided for outputting one of selection signals. The memory stores different encode data. The conversion circuit selects encode data according to the selection signals output from the mode selector, and encodes and converts the button signal into a pre-formatted wireless signal according to the selected encode data, and then sends the pre-formatted wireless signal through a wireless signal transmitting circuit. Thus, the button signal of the game controller is converted into a wireless signal corresponding to another game console providing another game control device integrating the game controller with the external control device, which has the same effect.
    Type: Application
    Filed: January 13, 2020
    Publication date: July 16, 2020
    Applicant: ZEROPLUS TECHNOLOGY CO., LTD.
    Inventors: WEN-CHUNG CHANG, SHIH-CHUNG CHOU, YI-CHUN SHIH, TSUNG-CHIH HUANG
  • Publication number: 20190219220
    Abstract: A supporting device including: a fixing arm, a first elastic member, a interlock member, an operating arm, a carrying assembly, and a second elastic member. One end of the fixing arm is pivotally connected to the interlock member, the other end of the fixing arm is connected to one end of the first elastic member, and the other end of the first elastic member is connected to the interlock member. Two ends of the operating arm are respectively pivotally connected to the carrying assembly and the interlock member. Two ends of the second elastic member are respectively fixed to the carrying assembly and the fixing arm. When the carrying assembly is carries an object to be carried, the first elastic member and the second elastic member are respectively stretched.
    Type: Application
    Filed: January 12, 2018
    Publication date: July 18, 2019
    Inventor: SHIH-CHUNG CHOU
  • Patent number: 6953723
    Abstract: Disclosed is a method for forming a bottle shaped trench. The method of the present invention includes steps of providing a substrate; forming a plurality of operation layers on the substrate; forming a photoresist layer on the operation layers to define a predetermined position; forming a trench according to the predetermined position; implanting predetermined ions, which reduces oxidizing rate of the sidewall of the trench, into the upper sidewall of the trench; oxidizing the sidewall of the trench to form an oxide layer, in which the portion of the oxide layer formed at the portion of the sidewall implanted with the ions is thin, while the portion of the oxide layer formed at the portion of the sidewall not implanted with the ions is thick; and removing the oxide layer to form a bottle shaped trench.
    Type: Grant
    Filed: February 2, 2004
    Date of Patent: October 11, 2005
    Assignee: NANYA Technology Corporation
    Inventors: Shih-Chung Chou, Yi-Nan Chen
  • Patent number: 6946344
    Abstract: A method for forming a trench capacitor. A semiconductor substrate with a trench is provided, and a trench capacitor is formed in the trench with a storage node and a node dielectric layer. The top portion of the trench is ion implanted to a predetermined angle to form an ion doped area on a sidewall of the top portion of the trench and a top surface of the trench capacitor. The ion doped area is oxidized to form an oxide layer. A sidewall semiconductor layer is formed on another sidewall using the oxide layer as a mask, and then the oxide layer is removed. A barrier layer is conformally formed on the surface of the trench, and the trench is filled with a conducting layer.
    Type: Grant
    Filed: July 16, 2003
    Date of Patent: September 20, 2005
    Assignee: Nanya Technology Corporation
    Inventors: Shih-Chung Chou, Yi-Nan Chen, Tzu-Ching Tsai
  • Publication number: 20050170581
    Abstract: Disclosed is a method for forming a bottle shaped trench. The method of the present invention includes steps of providing a substrate; forming a plurality of operation layers on the substrate; forming a photoresist layer on the operation layers to define a predetermined position; forming a trench according to the predetermined position; implanting predetermined ions, which reduces oxidizing rate of the sidewall of the trench, into the upper sidewall of the trench; oxidizing the sidewall of the trench to form an oxide layer, in which the portion of the oxide layer formed at the portion of the sidewall implanted with the ions is thin, while the portion of the oxide layer formed at the portion of the sidewall not implanted with the ions is thick; and removing the oxide layer to form a bottle shaped trench.
    Type: Application
    Filed: February 2, 2004
    Publication date: August 4, 2005
    Applicant: Nanya Technology Corporation
    Inventors: Shih-Chung Chou, Yi-Nan Chen
  • Patent number: 6852590
    Abstract: A method of fabricating a deep trench capacitor is described. A substrate having a deep trench therein is provided. A doped region is formed in the substrate at the bottom of the deep trench, a dielectric layer is formed on the bottom surface of the deep trench, and a first conductive layer is formed on the dielectric layer. A collar oxide layer is formed on sidewalls of the deep trench that are not covered by the first conductive layer. A material layer is formed covering the first conductive layer and exposing a portion of the collar oxide layer. The exposed collar oxide layer is removed to expose the substrate. Then, the material layer is removed, and a second conductive layer is formed in the deep trench covering the first conductive layer and the collar oxide layer. In this invention, only the second conductive layer is formed on the first conductive layer for electrically connecting the capacitor and an active device, hence the method is more simple.
    Type: Grant
    Filed: June 7, 2004
    Date of Patent: February 8, 2005
    Assignee: Nanya Technology Corporation
    Inventors: Tzu-Ching Tsai, Shih-Chung Chou
  • Publication number: 20040250392
    Abstract: A method for forming a trench capacitor. A semiconductor substrate with a trench is provided, and a trench capacitor is formed in the trench with a storage node and a node dielectric layer. The top portion of the trench is ion implanted to a predetermined angle to form an ion doped area on a sidewall of the top portion of the trench and a top surface of the trench capacitor. The ion doped area is oxidized to form an oxide layer. A sidewall semiconductor layer is formed on another sidewall using the oxide layer as a mask, and then the oxide layer is removed. A barrier layer is conformally formed on the surface of the trench, and the trench is filled with a conducting layer.
    Type: Application
    Filed: July 16, 2003
    Publication date: December 16, 2004
    Applicant: Nanya Technology Corporation
    Inventors: Shih-Chung Chou, Yi-Nan Chen, Tzu-Ching Tsai
  • Patent number: D870106
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: December 17, 2019
    Assignee: ZEROPLUS TECHNOLOGY CO., LTD.
    Inventors: Tsung-Chih Huang, Tsan-Hsing Pai, Shih-Chung Chou