Abstract: The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed directly on an upper surface of the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.

Abstract: An external control device for a game controller is provided, including a casing, a second adapter, a mode selector, a memory, and a conversion circuit. The second adapter is provided for being connected to the first adapter of the game controller. The mode selector is provided for outputting one of selection signals. The memory stores different encode data. The conversion circuit selects encode data according to the selection signals output from the mode selector, and encodes and converts the button signal into a pre-formatted wireless signal according to the selected encode data, and then sends the pre-formatted wireless signal through a wireless signal transmitting circuit. Thus, the button signal of the game controller is converted into a wireless signal corresponding to another game console providing another game control device integrating the game controller with the external control device, which has the same effect.

Abstract: An external control device for a game controller is provided, including a casing, a second adapter, a mode selector, a memory, and a conversion circuit. The second adapter is provided for being connected to the first adapter of the game controller. The mode selector is provided for outputting one of selection signals. The memory stores different encode data. The conversion circuit selects encode data according to the selection signals output from the mode selector, and encodes and converts the button signal into a pre-formatted wireless signal according to the selected encode data, and then sends the pre-formatted wireless signal through a wireless signal transmitting circuit. Thus, the button signal of the game controller is converted into a wireless signal corresponding to another game console providing another game control device integrating the game controller with the external control device, which has the same effect.

Abstract: A supporting device including: a fixing arm, a first elastic member, a interlock member, an operating arm, a carrying assembly, and a second elastic member. One end of the fixing arm is pivotally connected to the interlock member, the other end of the fixing arm is connected to one end of the first elastic member, and the other end of the first elastic member is connected to the interlock member. Two ends of the operating arm are respectively pivotally connected to the carrying assembly and the interlock member. Two ends of the second elastic member are respectively fixed to the carrying assembly and the fixing arm. When the carrying assembly is carries an object to be carried, the first elastic member and the second elastic member are respectively stretched.

Abstract: Disclosed is a method for forming a bottle shaped trench. The method of the present invention includes steps of providing a substrate; forming a plurality of operation layers on the substrate; forming a photoresist layer on the operation layers to define a predetermined position; forming a trench according to the predetermined position; implanting predetermined ions, which reduces oxidizing rate of the sidewall of the trench, into the upper sidewall of the trench; oxidizing the sidewall of the trench to form an oxide layer, in which the portion of the oxide layer formed at the portion of the sidewall implanted with the ions is thin, while the portion of the oxide layer formed at the portion of the sidewall not implanted with the ions is thick; and removing the oxide layer to form a bottle shaped trench.

Abstract: A method for forming a trench capacitor. A semiconductor substrate with a trench is provided, and a trench capacitor is formed in the trench with a storage node and a node dielectric layer. The top portion of the trench is ion implanted to a predetermined angle to form an ion doped area on a sidewall of the top portion of the trench and a top surface of the trench capacitor. The ion doped area is oxidized to form an oxide layer. A sidewall semiconductor layer is formed on another sidewall using the oxide layer as a mask, and then the oxide layer is removed. A barrier layer is conformally formed on the surface of the trench, and the trench is filled with a conducting layer.

Abstract: Disclosed is a method for forming a bottle shaped trench. The method of the present invention includes steps of providing a substrate; forming a plurality of operation layers on the substrate; forming a photoresist layer on the operation layers to define a predetermined position; forming a trench according to the predetermined position; implanting predetermined ions, which reduces oxidizing rate of the sidewall of the trench, into the upper sidewall of the trench; oxidizing the sidewall of the trench to form an oxide layer, in which the portion of the oxide layer formed at the portion of the sidewall implanted with the ions is thin, while the portion of the oxide layer formed at the portion of the sidewall not implanted with the ions is thick; and removing the oxide layer to form a bottle shaped trench.

Abstract: A method of fabricating a deep trench capacitor is described. A substrate having a deep trench therein is provided. A doped region is formed in the substrate at the bottom of the deep trench, a dielectric layer is formed on the bottom surface of the deep trench, and a first conductive layer is formed on the dielectric layer. A collar oxide layer is formed on sidewalls of the deep trench that are not covered by the first conductive layer. A material layer is formed covering the first conductive layer and exposing a portion of the collar oxide layer. The exposed collar oxide layer is removed to expose the substrate. Then, the material layer is removed, and a second conductive layer is formed in the deep trench covering the first conductive layer and the collar oxide layer. In this invention, only the second conductive layer is formed on the first conductive layer for electrically connecting the capacitor and an active device, hence the method is more simple.

Abstract: A method for forming a trench capacitor. A semiconductor substrate with a trench is provided, and a trench capacitor is formed in the trench with a storage node and a node dielectric layer. The top portion of the trench is ion implanted to a predetermined angle to form an ion doped area on a sidewall of the top portion of the trench and a top surface of the trench capacitor. The ion doped area is oxidized to form an oxide layer. A sidewall semiconductor layer is formed on another sidewall using the oxide layer as a mask, and then the oxide layer is removed. A barrier layer is conformally formed on the surface of the trench, and the trench is filled with a conducting layer.