Abstract: The present disclosure provides a dual-lens movement control method, which includes steps as follows. The tracking target is detected through the wide-angle lens, and the final tracking range is calculated; the magnification and the position are determined according to the final tracking range; the separate mode or the alignment mode is determined according to the magnification and the position.

Abstract: A package structure is provided. The package structure includes a through substrate via structure, a first stacked die package structure, an underfill layer, and a package layer. The through substrate via structure is formed over a substrate. The first stacked die package structure is over the through substrate via structure, wherein the first stacked die package structure comprises a plurality of memory dies. The underfill layer is over the first stacked die package structure. the package layer is over the underfill layer, wherein the package layer has a protruding portion that extends below a top surface of the through substrate via structure.

Abstract: A method for generating a random number, applied in a random number generator coupled to a flash memory is disclosed. the method comprises: selecting a plurality of cells from the flash memory; initializing the selecting cells of the flash memory; programming the selecting cells to obtain a plurality of first potential values of the selecting cells; re-initializing the selecting cells of the flash memory; re-programming the selecting cells to obtain a plurality of second potential values of the selecting cells; and processing the first potential values and the second potential values according to a predetermined algorithm to generating the random number.

Abstract: An electronic device includes: a storage device containing a target block having multiple word lines and multiple bit lines; a transmission interface configured to operably receive data to be written into the storage device; and a controller circuit including: an access circuit; and a flash memory control circuit configured to operably control the access circuit to write a first data into one or more pages connected with a first word line in the target block using a first program scheme, and to operably control the access circuit to write a second data into one or more pages connected with a second word line in the target block using a second program scheme, so that the first data and the second data are stored in the target block at the same time.

Abstract: A memory controller includes: an interface configured to operably communicate with a host device; a temperature detecting circuit configured to operably detect an ambient temperature, wherein when the ambient temperature is beyond a predetermined temperature range, the temperature detecting circuit generates a control signal; and a processing circuit coupled to the interface and the temperature detecting circuit, for selecting one of a plurality of data program schemes to program data into a first storage block of a flash memory according to the control signal.

Abstract: A memory controller includes: an interface configured to operably communicate with a host device; a temperature detecting circuit configured to operably detect an ambient temperature, wherein when the ambient temperature is beyond a predetermined temperature range, the temperature detecting circuit generates a control signal; and a processing circuit coupled to the interface and the temperature detecting circuit, for selecting one of a plurality of data program schemes to program data into a first storage block of a flash memory according to the control signal.

Abstract: An electronic device includes: a storage device containing a target block having multiple word lines and multiple bit lines; a transmission interface configured to operably receive data to be written into the storage device; and a controller circuit including: an access circuit; and a flash memory control circuit configured to operably control the access circuit to write a first data into one or more pages connected with a first word line in the target block using a first program scheme, and to operably control the access circuit to write a second data into one or more pages connected with a second word line in the target block using a second program scheme, so that the first data and the second data are stored in the target block at the same time.

Abstract: A method for generating a security feature of a flash memory includes determining a memory block from a plurality of memory blocks in the flash memory; erasing data of the determined memory block of the flash memory; providing a predetermined voltage to the determined memory block to obtain a plurality of corresponding threshold voltages of a plurality of cells in the determined memory block, wherein each of the corresponding threshold voltages corresponds to a characteristic of each cell in the determined memory block; and establishing a security feature based on the plurality of corresponding threshold voltages.

Abstract: A flash memory controller is suitable for a NAND flash memory and a voltage supply circuit. The voltage supply circuit supplies a current to the flash memory. The flash memory controller includes a flash control circuit, a current sensing circuit, and a processor. The flash control circuit is configured to control an operation of the flash memory. The current sensing circuit is configured to measure the current consumed by the flash memory during its operation, and output a current value. The processor is configured to output a control signal based on the current value. Therefore, the flash memory controller can instantly obtain a current value consumed during the operation of flash memory, and determine, based on the current value, whether the flash memory runs normally. A storage apparatus having the flash memory controller can instantly determine whether the flash memory runs normally.

Abstract: A circuit board includes a first conductive circuit layer, a cover layer, and a second conductive circuit layer. The cover layer includes an adhesive layer and a base film. The first conductive circuit layer is embedded within the adhesive layer. One side of the first conductive circuit layer is revealed from the adhesive layer. The second conductive circuit layer is located on a side of the base film facing away from the adhesive layer. The cover layer defines a first through hole and a second through hole passing through the cover layer. A diameter of the first through hole is greater than a diameter of the second through hole. The first through hole is filled with a copper post adjacent to the first conductive circuit layer and an electroplating layer adjacent to the second conductive circuit layer. The second through hole is filled with the electroplating layer.

Abstract: A method for generating a random number, applied in a random number generator coupled to a flash memory is disclosed. the method comprises: selecting a plurality of cells from the flash memory; initializing the selecting cells of the flash memory; programming the selecting cells to obtain a plurality of first potential values of the selecting cells; re-initializing the selecting cells of the flash memory; re-programming the selecting cells to obtain a plurality of second potential values of the selecting cells; and processing the first potential values and the second potential values according to a predetermined algorithm to generating the random number.

Abstract: A method for generating a security feature of a flash memory includes determining a memory block from a plurality of memory blocks in the flash memory; erasing data of the determined memory block of the flash memory; providing a predetermined voltage to the determined memory block to obtain a plurality of corresponding threshold voltages of a plurality of cells in the determined memory block, wherein each of the corresponding threshold voltages corresponds to a characteristic of each cell in the determined memory block; and establishing a security feature based on the plurality of corresponding threshold voltages.

Abstract: A flash memory controller is suitable for a NAND flash memory and a voltage supply circuit. The voltage supply circuit supplies a current to the flash memory. The flash memory controller includes a flash control circuit, a current sensing circuit, and a processor. The flash control circuit is configured to control an operation of the flash memory. The current sensing circuit is configured to measure the current consumed by the flash memory during its operation, and output a current value. The processor is configured to output a control signal based on the current value. Therefore, the flash memory controller can instantly obtain a current value consumed during the operation of flash memory, and determine, based on the current value, whether the flash memory runs normally. A storage apparatus having the flash memory controller can instantly determine whether the flash memory runs normally.

Abstract: The lighting module includes a light emitter, a hood and a cover. The light emitter is mounted on an end of the hood. The cover is disposed in the hood and has a conic reflecting surface. When the light emitter is lit up, the lights are emitted into the hood and reflected by the conic reflecting surface and then further reflected by the hood to be projected outward.

Abstract: A package carrier includes: (1) a dielectric layer; (2) a first electrically conductive pattern, embedded in the dielectric layer and disposed adjacent to a first surface of the dielectric layer, and including a plurality of first pads; (3) a plurality of first electrically conductive posts, extending through the dielectric layer, wherein each of the first electrically conductive posts includes a first electrically conductive post segment connected to at least one of the first pads and a second electrically conductive post segment connected to the first electrically conductive post segment, and a lateral extent of the first electrically conductive post segment is different from a lateral extent of the second electrically conductive post segment; and (4) a second electrically conductive pattern, disposed adjacent to a second surface of the dielectric layer, and including a plurality of second pads connected to respective ones of the second electrically conductive post segments.

Abstract: A test method tests a memory device including a memory array having a plurality of symmetric memory cells, a plurality of word lines and a plurality of bit lines. In testing a first word line, a first bit line is charged to test a single bit of a first half of an adjacent first symmetric memory cell; and a second bit line is charged to test a single bit of a second half of an adjacent second symmetric memory cell. In testing a second word line, the first bit line is charged to test a single bit of the second half of an adjacent third symmetric memory cell; and the second bit line is charged to test a single bit of the first half of an adjacent fourth symmetric memory cell. In testing each of the word lines, each of the bit lines is charged once.

Abstract: An embedded component device includes an electronic component including an electrical contact, an upper patterned conductive layer, a dielectric layer between the upper patterned conductive layer and the electronic component, a first electrical interconnect, a lower patterned conductive layer, a conductive via, and a second electrical interconnect. The dielectric layer has a first opening exposing the electrical contact, and a second opening extending from the lower patterned conductive layer to the upper patterned conductive layer. The first electrical interconnect extends from the electrical contact to the upper patterned conductive layer, and fills the first opening. The second opening has an upper portion exposing the upper patterned conductive layer and a lower portion exposing the lower patterned conductive layer. The conductive via is located at the lower portion of the second opening. The second electrical interconnect fills the upper portion of the second opening.

Abstract: A package carrier includes: (1) a dielectric layer; (2) a first electrically conductive pattern, embedded in the dielectric layer and disposed adjacent to a first surface of the dielectric layer, and including a plurality of first pads; (3) a plurality of first electrically conductive posts, extending through the dielectric layer, wherein each of the first electrically conductive posts includes a first electrically conductive post segment connected to at least one of the first pads and a second electrically conductive post segment connected to the first electrically conductive post segment, and a lateral extent of the first electrically conductive post segment is different from a lateral extent of the second electrically conductive post segment; and (4) a second electrically conductive pattern, disposed adjacent to a second surface of the dielectric layer, and including a plurality of second pads connected to respective ones of the second electrically conductive post segments.

Abstract: Operation methods for a memory device is provided. An operation method for the memory device comprises programming the memory device as described in follows. Data are provided. The data comprise a plurality of codes. Each number of the codes is counted. Then, a mapping rule is generated according to each number of the codes. In the mapping rule, each of the codes is mapped to one of a plurality of verifying voltage levels which are sequentially arranged from low to high. After that, the data are programmed into the memory device according to the mapping rule.

Abstract: A test method tests a memory device including a memory array having a plurality of symmetric memory cells, a plurality of word lines and a plurality of bit lines. In testing a first word line, a first bit line is charged to test a single bit of a first half of an adjacent first symmetric memory cell; and a second bit line is charged to test a single bit of a second half of an adjacent second symmetric memory cell. In testing a second word line, the first bit line is charged to test a single bit of the second half of an adjacent third symmetric memory cell; and the second bit line is charged to test a single bit of the first half of an adjacent fourth symmetric memory cell. In testing each of the word lines, each of the bit lines is charged once.