Abstract: In an embodiment, a device includes: an integrated circuit die; a through via adjacent the integrated circuit die; a molding compound encapsulating the integrated circuit die and the through via; and a redistribution structure including: a first conductive via extending through a first dielectric layer, the first conductive via electrically connected to the integrated circuit die, the first dielectric layer being over the integrated circuit die, the through via, and the molding compound; and a first conductive line over the first dielectric layer and the first conductive via, the first conductive via extending into the first conductive line.

Abstract: The present application discloses an inertial sensor comprising a proof mass, an anchor, a flexible member and several sensing electrodes. The anchor is positioned on one side of the sensing, mass block in a first axis. The flexible member is connected to the anchor point and extends along the first axis towards the proof mass to connect the proof mass, in which the several sensing electrodes are provided. In this way, the present application can effectively solve the problems of high difficulty in the production and assembly of inertial sensors and poor product reliability thereof.

Abstract: A manufacturing method of a semiconductor package includes the following steps. An integrated circuit structure is provided, wherein the integrated circuit structure includes an integrated circuit and a metallization layer covering a back surface of the integrated circuit. An encapsulation material is provided to laterally encapsulate the integrated circuit structure. A redistribution structure is provided over the integrated circuit structure and the encapsulation material, wherein the redistribution structure includes a thermal metal layer furthermost from the integrated circuit structure, wherein the thermal metal layer is thermally coupled to the metallization layer. A solder layer is provided over the thermal metal layer, wherein the solder layer is thermally coupled to the thermal metal layer.

Abstract: A manufacturing method of a semiconductor package including the following steps is provided. A redistribution structure is formed over an encapsulated semiconductor device carried by a carrier, wherein the redistribution structure includes an organic polymer layer and a redistribution circuit layer electrically connected to the semiconductor device. An inorganic protection layer is formed to entirely cover an upper surface of the redistribution structure, wherein an oxygen and/or water vapor permeability of the inorganic protection layer is substantially lower than an oxygen and/or vapor permeability of the organic polymer layer. An adhesive is formed on the inorganic protection layer. An insulating cover is adhered on the inorganic protection layer through the adhesive.

Abstract: A semiconductor package includes a first integrated circuit structure, a first encapsulation material laterally encapsulating the first integrated circuit structure, a first redistribution structure, a solder layer, a second integrated circuit structure, a second encapsulation material second laterally encapsulating the second integrated circuit structure and a second redistribution structure. The first integrated circuit structure includes a first metallization layer. The first redistribution structure is disposed over the first integrated circuit structure and first encapsulation material. The first metallization layer faces away from the first redistribution structure and thermally coupled to the first redistribution structure. The solder layer is dispose over the first redistribution structure. The second integrated circuit structure is disposed on the first redistribution structure and includes a second metallization layer in contact with the solder layer.

Abstract: A semiconductor package includes a first integrated circuit, a first passivation layer, a second passivation layer, a thermal pattern, an adhesive layer and a second integrated circuit. The first integrated circuit is encapsulated by an encapsulant. The first passivation layer is disposed over the first integrated circuit and the encapsulant. The second passivation layer is disposed over the first passivation layer. The thermal pattern is disposed in the first passivation layer and the second passivation layer. The adhesive layer is disposed over the second passivation layer and in direct contact with the thermal pattern. The second integrated circuit is adhered to the first integrated circuit through the adhesive layer.

Abstract: A manufacturing method of a semiconductor package including the following steps is provided. A redistribution structure is formed over an encapsulated semiconductor device carried by a carrier, wherein the redistribution structure includes an organic polymer layer and a redistribution circuit layer electrically connected to the semiconductor device. An inorganic protection layer is formed to entirely cover an upper surface of the redistribution structure, wherein an oxygen and/or water vapor permeability of the inorganic protection layer is substantially lower than an oxygen and/or vapor permeability of the organic polymer layer. An adhesive is formed on the inorganic protection layer. An insulating cover is adhered on the inorganic protection layer through the adhesive.

Abstract: A semiconductor package includes a first integrated circuit structure, a first encapsulation material laterally encapsulating the first integrated circuit structure, a first redistribution structure, a solder layer, a second integrated circuit structure, a second encapsulation material second laterally encapsulating the second integrated circuit structure and a second redistribution structure. The first integrated circuit structure includes a first metallization layer. The first redistribution structure is disposed over the first integrated circuit structure and first encapsulation material. The first metallization layer faces away from the first redistribution structure and thermally coupled to the first redistribution structure. The solder layer is dispose over the first redistribution structure. The second integrated circuit structure is disposed on the first redistribution structure and includes a second metallization layer in contact with the solder layer.

Abstract: In an embodiment, a device includes: an integrated circuit die; a through via adjacent the integrated circuit die; a molding compound encapsulating the integrated circuit die and the through via; and a redistribution structure including: a first conductive via extending through a first dielectric layer, the first conductive via electrically connected to the integrated circuit die, the first dielectric layer being over the integrated circuit die, the through via, and the molding compound; and a first conductive line over the first dielectric layer and the first conductive via, the first conductive via extending into the first conductive line.

Abstract: A semiconductor package includes an encapsulated semiconductor device, a redistribution structure, and a protection layer. The encapsulated semiconductor device includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. The redistribution structure is disposed on the encapsulated semiconductor device and includes a dielectric layer and a redistribution circuit layer electrically connected to the semiconductor device. The protection layer at least covers the dielectric layer, wherein an oxygen permeability or a water vapor permeability of the protection layer is substantially lower than an oxygen permeability or a vapor permeability of the dielectric layer.

Abstract: In an embodiment, a device includes: an integrated circuit die; a through via adjacent the integrated circuit die; a molding compound encapsulating the integrated circuit die and the through via; and a redistribution structure including: a first conductive via extending through a first dielectric layer, the first conductive via electrically connected to the integrated circuit die, the first dielectric layer being over the integrated circuit die, the through via, and the molding compound; and a first conductive line over the first dielectric layer and the first conductive via, the first conductive via extending into the first conductive line.

Abstract: A semiconductor package includes an encapsulated semiconductor device, a redistribution structure, and a protection layer. The encapsulated semiconductor device includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. The redistribution structure is disposed on the encapsulated semiconductor device and includes a dielectric layer and a redistribution circuit layer electrically connected to the semiconductor device. The protection layer at least covers the dielectric layer, wherein an oxygen permeability or a water vapor permeability of the protection layer is substantially lower than an oxygen permeability or a vapor permeability of the dielectric layer.

Abstract: Concepts and technologies disclosed herein are directed to routing stability in a hybrid software-defined networking (“SDN”) network in which control plane functionality is shared between a centralized SDN controller and a plurality of local routers. The controller can collect data plane messages from the plurality of local routers, extract information corresponding to source nodes and edges of a graph representative of the hybrid SDN network, and store the information as entries in a table. The controller can identify any outdated entries and remove any outdated entries from the table. The controller can obtain recovered information missing from the information collected from the data plane messages. The controller also can calculate an effective capacity of the edges. The controller can then generate a stable routing pattern based upon the recovered information and the effective capacity. The controller can deploy the stable routing pattern in the hybrid SDN network.

Abstract: A semiconductor package includes an encapsulated semiconductor device, a redistribution structure, and a protection layer. The encapsulated semiconductor device includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. The redistribution structure is disposed on the encapsulated semiconductor device and includes a dielectric layer and a redistribution circuit layer electrically connected to the semiconductor device. The protection layer at least covers the dielectric layer, wherein an oxygen permeability or a water vapor permeability of the protection layer is substantially lower than an oxygen permeability or a vapor permeability of the dielectric layer.

Abstract: Concepts and technologies disclosed herein are directed to routing stability in a hybrid software-defined networking (“SDN”) network in which control plane functionality is shared between a centralized SDN controller and a plurality of local routers. The controller can collect data plane messages from the plurality of local routers, extract information corresponding to source nodes and edges of a graph representative of the hybrid SDN network, and store the information as entries in a table. The controller can identify any outdated entries and remove any outdated entries from the table. The controller can obtain recovered information missing from the information collected from the data plane messages. The controller also can calculate an effective capacity of the edges. The controller can then generate a stable routing pattern based upon the recovered information and the effective capacity. The controller can deploy the stable routing pattern in the hybrid SDN network.

Abstract: A semiconductor package includes an encapsulated semiconductor device, a redistribution structure, and a protection layer. The encapsulated semiconductor device includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. The redistribution structure is disposed on the encapsulated semiconductor device and includes a dielectric layer and a redistribution circuit layer electrically connected to the semiconductor device. The protection layer at least covers the dielectric layer, wherein an oxygen permeability or a water vapor permeability of the protection layer is substantially lower than an oxygen permeability or a vapor permeability of the dielectric layer.

Abstract: In an embodiment, a device includes: an integrated circuit die; a through via adjacent the integrated circuit die; a molding compound encapsulating the integrated circuit die and the through via; and a redistribution structure including: a first conductive via extending through a first dielectric layer, the first conductive via electrically connected to the integrated circuit die, the first dielectric layer being over the integrated circuit die, the through via, and the molding compound; and a first conductive line over the first dielectric layer and the first conductive via, the first conductive via extending into the first conductive line.

Abstract: A bore-variable leadpipe includes a mouthpiece receiver integrally formed on a tube body of a brass instrument and a mouthpiece adaptor detachably assembled to the mouthpiece receiver. The mouthpiece receiver internally defines a first bore, in which an assembling section, a tapered section and an air-guiding section are sequentially formed. The mouthpiece adaptor has a receiving end for receiving a mouthpiece therein and an assembling end for engaging with the assembling section, and internally defines a second bore between the two ends. When the mouthpiece adaptor is assembled to the mouthpiece receiver, the second and the first bore are aligned and communicable with each other to form a conical passage and a cylindrical passage. The leadpipe can be changed in its bore size by assembling a mouthpiece adaptor of a different bore size to the mouthpiece receiver, so that the same brass instrument can be used with differently sized mouthpieces.

Abstract: A bore-variable leadpipe includes a mouthpiece receiver integrally formed on a tube body of a brass instrument and a mouthpiece adaptor detachably assembled to the mouthpiece receiver. The mouthpiece receiver internally defines a first bore, in which an assembling section, a tapered section and an air-guiding section are sequentially formed. The mouthpiece adaptor has a receiving end for receiving a mouthpiece therein and an assembling end for engaging with the assembling section, and internally defines a second bore between the two ends. When the mouthpiece adaptor is assembled to the mouthpiece receiver, the second and the first bore are aligned and communicable with each other to form a conical passage and a cylindrical passage. The leadpipe can be changed in its bore size by assembling a mouthpiece adaptor of a different bore size to the mouthpiece receiver, so that the same brass instrument can be used with differently sized mouthpieces.

Abstract: A display device includes a display panel and at least one driving chip. The display panel has a display region and a non-display region and includes a pixel array, a plurality of pads, a passivation layer, and a plurality of conductive patterns. The pixel array is located in the display region. The pads are located in the non-display region and electrically connected to the pixel array. The passivation layer is located on the pads and has a plurality of through holes. Each of the conductive patterns covers one of the pads and is electrically connected to the pad through at least one of the through holes. A material of the conductive patterns includes a polymer conductive material. The driving chip is located on the display panel and electrically connected to the pads of the display panel.