Abstract: A semiconductor structure, integrated circuit device, and method of forming semiconductor structure are provided. In various embodiments, the semiconductor structure includes a substrate containing a high topography region and a low topography region, an outer protection wall on an outer peripheral portion of the high topography region next to the low topography region, and an anti-reflective coating over the outer protection wall, the high topography region, and the low topography region.

Abstract: A semiconductor structure, integrated circuit device, and method of forming semiconductor structure are provided. In various embodiments, the semiconductor structure includes a substrate containing a high topography region and a low topography region, an outer protection wall on an outer peripheral portion of the high topography region next to the low topography region, and an anti-reflective coating over the outer protection wall, the high topography region, and the low topography region.

Abstract: A semiconductor structure, integrated circuit device, and method of forming semiconductor structure are provided. In various embodiments, the semiconductor structure includes a substrate containing a high topography region and a low topography region, an outer protection wall on an outer peripheral portion of the high topography region next to the low topography region, and an anti-reflective coating over the outer protection wall, the high topography region, and the low topography region.

Abstract: A semiconductor structure, integrated circuit device, and method of forming semiconductor structure are provided. In various embodiments, the semiconductor structure includes a substrate containing a high topography region and a low topography region, an outer protection wall on an outer peripheral portion of the high topography region next to the low topography region, and an anti-reflective coating over the outer protection wall, the high topography region, and the low topography region.

Abstract: A semiconductor structure, integrated circuit device, and method of forming semiconductor structure are provided. In various embodiments, the semiconductor structure includes a substrate containing a high topography region and a low topography region, an outer protection wall on an outer peripheral portion of the high topography region next to the low topography region, and an anti-reflective coating over the outer protection wall, the high topography region, and the low topography region.

Abstract: A semiconductor structure, integrated circuit device, and method of forming semiconductor structure are provided. In various embodiments, the semiconductor structure includes a substrate containing a high topography region and a low topography region, an outer protection wall on an outer peripheral portion of the high topography region next to the low topography region, and an anti-reflective coating over the outer protection wall, the high topography region, and the low topography region.

Abstract: A capacitive touch panel including a transparent substrate, a plurality of first metal wires, an insulation layer, a plurality of first sensing units, a plurality of second sensing units and a plurality of second metal wires are provided. The transparent substrate has a substrate surface on which the first metal wires, the first sensing units and the second sensing units are formed. The insulation layer can cover a portion of each first metal wire, which is connected to two of the first sensing units, wherein each second metal wire is connected to two of the second sensing units.

Abstract: A capacitive touch panel is provided. The capacitive touch panel includes a transparent substrate, a plurality of first sensing wires, a plurality of second sensing units, an insulation layer, a plurality of second sensing wires and a plurality of fourth sensing units. The transparent substrate has a substrate surface on which the insulation layer is disposed. The insulation layer covers the first sensing wires and the second sensing wires. A plurality of third sensing units of the second sensing wires is disposed on the insulation layer along a second axial direction. The fourth sensing units are disposed on the insulation layer along a first axial direction. The third sensing units and the fourth sensing units are adjacently arranged.

Abstract: A capacitive touch panel including a transparent substrate, a plurality of first sensing wires, a plurality of second sensing wires and an insulation layer is provided. The transparent substrate has a substrate surface. The first sensing wires are disposed on the substrate surface along a first axis direction. The second sensing wires include a plurality of bridge wires and a plurality of sensing units. The sensing units are disposed on the substrate surface along the second axis direction. The insulation layer is disposed on the substrate surface, covers the first sensing wires, and has a plurality of through holes. The through holes correspondingly expose the sensing units. Each bridge wire strides the insulation layer to electrically connect two of the sensing units.

Abstract: An optical recording medium is provided with inorganic bi-layer films that were prepared by magnetic sputtering. A first recording layer containing an element selected from Si or Ge, and a second recording layer contacts with the first recording layer and containing a primary component selected from Ta, Ni or Mo. This optical media can record information by way of microscopic structure changing of bi-layer recording films after laser irradiation.

Abstract: A method for improving read stability of optical recording medium is disclosed. In the method, the thickness of a recording layer of an optical recording medium is adjusted to control the disc absorptivity, and the recording layer thickness is matched with a power difference between a laser write power (Pw) and a laser erase power (Pe), so as to control the optimal laser power for irradiating and accordingly changing the optical properties of the recording layer. It is found that by using properly increased recording layer thickness corresponding to a given disc absorptivity, and properly matching the recording layer thickness with a properly increased power difference, the read stability and recording characteristics of the optical recording media can be improved without significantly changing the layer structure and writing strategy of the optical recording medium.

Abstract: A recording material of Ag1-xSbx (x=10.8˜25.5 at. %) films for WORM optical disk recording media is invented. The thermal analysis shows that the phase change temperature of AgSb film is between 250 and 270?. The optical property analysis shows that all the as deposited films have good optical absorption and high reflectivity. The X-ray Diffraction analysis shows that the as deposited film and the annealed film are kept at ??-AgSb crystalline phase. The TEM analysis shows that the grain size of the Ag80.9Sb19.1 film will grow after annealing. The dynamic test shows that the carrier-to-noise ratio (CNR) of the Ag80.9Sb19.1 optical disc is about 45 dB with ?=657 nm, NA=0.65 and a linear velocity of 3.5 m/s. These Ag1-xSbx films have good optical absorption, high reflectivity and good carrier-to-noise ratio. It can be used as the WORM optical disk recording film.

Abstract: An optical recording medium is provided with inorganic bi-layer films that were prepared by magnetic sputtering. A first recording layer containing an element selected from Si or Ge, and a second recording layer contacts with the first recording layer and containing a primary component selected from Ta, Ni or Mo. This optical media can record information by way of microscopic structure changing of bi-layer recording films after laser irradiation.