Abstract: The present disclosure provides a semiconductor structure with having a source/drain feature with a central cavity, and a source/drain contact feature formed in central cavity of the source/drain region, wherein the source/drain contact feature is nearly wrapped around by the source/drain region. The source/drain contact feature may extend to a lower most of a plurality semiconductor layers.

Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.

Abstract: A semiconductor device includes a single-layered dielectric layer, a conductive line, a conductive via and a conductive pad. The conductive line and the conductive via are disposed in the single-layered dielectric layer. The conductive pad is extended into the single-layered dielectric layer to electrically connected to the conductive line.

Abstract: Antibodies that specifically bind to CD47 and antibodies that specifically bind to PD-L1 are provided, as well as CD47/PD-L1 bispecific antibodies. Also provided are uses of these antibodies, and related compositions and methods.

Abstract: The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.

Abstract: A device includes a pair of gate spacers on a substrate, and a gate structure on the substrate and between the gate spacers. The gate structure includes an interfacial layer, a metal oxide layer, a nitride-containing layer, a tungsten-containing layer, and a metal compound layer. The interfacial layer is over the substrate. The metal oxide layer is over the interfacial layer. The nitride-containing layer is over the metal oxide layer. The tungsten-containing layer is over the nitride-containing layer. The metal compound layer is over the tungsten-containing layer. The metal compound layer has a different material than a material of the tungsten-containing layer.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes channel structures vertically stacked over a substrate and a source/drain structure laterally attached to the channel structures in the first direction. The semiconductor structure also includes a dielectric wall structure laterally attached to the channel structures in the second direction. The second direction is different from the first direction. In addition, the dielectric wall structure includes a bottom portion and a cap layer formed over the bottom portion. The semiconductor structure also includes an isolation feature vertically overlapping the cap layer of the dielectric wall structure and a gate structure formed around the channel structures and covering a sidewall of the isolation feature.

Abstract: A semiconductor device includes a substrate, a stack of semiconductor nanosheets, a dielectric wall, and a gate structure. The substrate includes a nanosheet mesa, and the stack of semiconductor nanosheets is disposed on the nanosheet mesa. The dielectric wall crosses through the nanosheet mesa and the stack of semiconductor nanosheets. The gate structure wraps the stack of semiconductor nanosheets and crosses over the dielectric wall, wherein a top of the dielectric wall has a recess.

Abstract: A method includes forming a test pattern and a reference pattern in an absorption layer of a photomask structure. The test pattern has a first trench and a second trench, the reference pattern has a third trench and a fourth trench, the test pattern and the reference pattern have substantially the same dimension in a top view, and the second trench is deeper than the first trench, the third trench, and the fourth trench. The method further includes emitting a light beam to the test pattern to obtain a first interference pattern reflected from the test pattern, emitting the light beam to the reference pattern to obtain a second interference pattern reflected from the reference pattern; and comparing the first interference pattern with the second interference pattern to obtain a measured complex refractive index of the absorption layer.

Abstract: A character recognition method includes the following operations: determining that the image of character to be identified corresponds to a matching character of several registered characters according to several vector distances to be identified between a vector of an image of character to be identified and several vectors of several registered character images of several registered characters, and storing a matching vector distance between the vector of the image of character to be identified and a vector of the matching character by a processor; and storing a data of the matching character according to the image of character to be identified when the matching vector distance is less than a vector distance threshold by the processor.

Abstract: Provided herein are, inter alia, compounds inhibiting poly(ADP-ribose) Glycohydrolase (PARG) in a cancer cell and methods of treating cancer using compounds of the invention.

Abstract: Antibodies that specifically bind to CD47 and antibodies that specifically bind to PD-L1 are provided, as well as CD47/PD-L1 bispecific antibodies. Also provided are uses of these antibodies, and related compositions and methods.

Abstract: An intelligent expanding similar word model system and a method thereof are provided. The system is operated in a database system host and includes: a character analysis unit, configured to combine a plurality of key word acoustic models with an interference sound key word test set into a key word forward test module; a candidate word generation unit, configured to generate a plurality of candidate word temporary acoustic models; a recognition rate processing unit, configured to generate a first candidate word acoustic model; a false waking-up rate processing unit, configured to generate a second candidate word acoustic model; and an adjustment unit, configured to combine the plurality of key word acoustic models with the second candidate word acoustic model into a similar word acoustic model.

Abstract: The present disclosure describes combination therapies and uses thereof for the treatment of cancer. The combinations therapies include at least a first therapeutic agent and a second therapeutic agent.

Abstract: Provided herein are, inter alia, compounds inhibiting poly(ADP-ribose) Glycohydrolase (PARG) in a cancer cell and methods of treating cancer using compounds of the invention.

Abstract: Provided herein are, inter alia, methods of treating cancer using compounds of the invention.

Abstract: Antibodies that specifically bind to CD47 and antibodies that specifically bind to PD-L1 are provided, as well as CD47/PD-L1 bispecific antibodies. Also provided are uses of these antibodies, and related compositions and methods.

Abstract: A manufacturing method of a high entropy alloy (HEA) coating is provided. The manufacturing method of the HEA coating includes: melting a HEA material, wherein the HEA material comprises at least four metal elements, and the at least four elements are contained in the HEA material with substantially the same content; performing a gas atomization process on the molten HEA material to form HEA powders; and performing a plasma spray process to heat the HEA powders, and spray the heated HEA powders onto a target substrate.

Abstract: A method for fast locating a decipherable pattern in an input image, which is characterized in utilizing an overly downscaled binary image to not only reduce computation time but also facilitate extraction of skeletons for fast and accurately locating pattern, is disclosed. First, a pre-process is applied to an input image to acquire a binary image downscaled n times, from which at least one skeleton corresponding to a decipherable pattern is extracted. Coordinate values of at least one pixel of each skeleton are respectively enlarged n1/2 times and used as the central points on the original image plane for establishing a plurality of detecting blocks with the identical size. Subsequently, a grading mechanism is employed to determine the corresponding detecting blocks of the decipherable pattern.

Abstract: A method for fast locating a decipherable pattern in an input image, which is characterized in utilizing an overly downscaled binary image to not only reduce computation time but also facilitate extraction of skeletons for fast and accurately locating pattern, is disclosed. First, a pre-process is applied to an input image to acquire a binary image downscaled n times, from which at least one skeleton corresponding to a decipherable pattern is extracted. Coordinate values of at least one pixel of each skeleton are respectively enlarged n1/2 times and used as the central points on the original image plane for establishing a plurality of detecting blocks with the identical size. Subsequently, a grading mechanism is employed to determine the corresponding detecting blocks of the decipherable pattern.