Patents by Inventor Shih-Hsun Huang
Shih-Hsun Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240170211Abstract: A metal electrode of a ceramic capacitor and a method of forming the same are provided. The method includes mixing metal powders and a barium titanate organic-precursor to obtain precursor powders; adding an adhesive to the precursor powders to obtain a metal slurry; performing a molding process to the metal slurry to obtain a film material; performing a binder burn-out process to the film material to obtain a degumming film; and performing a sintering process to the degumming film to obtain the metal electrode. By mixing specific amount of barium titanate organic-precursor with the metal powders, the barium titanate metallic organic-precursor can be transformed to barium titanate in the following process, and barium titanate can be dispersed between the metals homogeneously. Therefore, electrode continuity can be increased.Type: ApplicationFiled: February 24, 2023Publication date: May 23, 2024Inventors: Hsing-I HSIANG, Fu-Su YEN, Chi-Yuen HUANG, Chun-Te LEE, Kai-Hsun YANG, Shih-Ming WANG
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Publication number: 20240162159Abstract: Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Dies of the pair of dies are disposed side by side. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.Type: ApplicationFiled: January 25, 2024Publication date: May 16, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang WANG, Wei-Ting Chen, Chien-Hsun Chen, Shih-Ya Huang
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Patent number: 11984419Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.Type: GrantFiled: July 26, 2022Date of Patent: May 14, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Hung Chen, Yu-Nu Hsu, Chun-Chen Liu, Heng-Chi Huang, Chien-Chen Li, Shih-Yen Chen, Cheng-Nan Hsieh, Kuo-Chio Liu, Chen-Shien Chen, Chin-Yu Ku, Te-Hsun Pang, Yuan-Feng Wu, Sen-Chi Chiang
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Publication number: 20240154021Abstract: A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine.Type: ApplicationFiled: December 29, 2022Publication date: May 9, 2024Inventors: TING-CHANG CHANG, Wei-Chen Huang, Shih-Kai Lin, Yong-Ci Zhang, Sheng-Yao Chou, Chung-Wei Wu, Po-Hsun Chen
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Publication number: 20240077804Abstract: A method includes forming a test pattern and a reference pattern in an absorption layer of a photomask structure. The test pattern has a first trench and a second trench, the reference pattern has a third trench and a fourth trench, the test pattern and the reference pattern have substantially the same dimension in a top view, and the second trench is deeper than the first trench, the third trench, and the fourth trench. The method further includes emitting a light beam to the test pattern to obtain a first interference pattern reflected from the test pattern, emitting the light beam to the reference pattern to obtain a second interference pattern reflected from the reference pattern; and comparing the first interference pattern with the second interference pattern to obtain a measured complex refractive index of the absorption layer.Type: ApplicationFiled: September 1, 2022Publication date: March 7, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ping-Hsun LIN, Chien-Cheng CHEN, Shih Ju HUANG, Pei-Cheng HSU, Ta-Cheng LIEN, Hsin-Chang LEE
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Patent number: 11923315Abstract: Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Dies of the pair of dies are disposed side by side. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.Type: GrantFiled: July 12, 2021Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang Wang, Wei-Ting Chen, Chien-Hsun Chen, Shih-Ya Huang
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Patent number: 11917230Abstract: A system and method for maximizing bandwidth in an uplink for a 5G communication system is disclosed. Multiple end devices generate image streams. A gateway is coupled to the end devices. The gateway includes a gateway monitor agent collecting utilization rate data of the gateway and an image inspector collecting inspection data from the received image streams. An edge server is coupled to the gateway. The edge server includes an edge server monitor agent collecting utilization rate data of the edge server. An analytics manager is coupled to the gateway and the edge server. The analytics manager is configured to determine an allocation strategy based on the collected utilization rate data from the gateway and the edge server.Type: GrantFiled: October 6, 2021Date of Patent: February 27, 2024Assignee: Quanta Cloud Technology Inc.Inventors: Yi-Neng Zeng, Keng-Cheng Liu, Wei-Ming Huang, Shih-Hsun Lai, Ji-Jeng Lin, Chia-Jui Lee, Liao Jin Xiang
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Publication number: 20230072388Abstract: An organic light-emitting diode (OLED) display device and an operating method thereof are disclosed. The OLED display device includes an OLED panel, a non-volatile memory and a volatile memory. The non-volatile memory is coupled to the OLED panel and used for storing accumulated current data from the OLED panel. The volatile memory is coupled between the non-volatile memory and the OLED panel and used for storing a compensation value generated according to the accumulated current data stored in the non-volatile memory. When the OLED panel is directly compensated with the compensation value, the non-volatile memory receives and stores updated accumulated current data of the OLED panel.Type: ApplicationFiled: August 31, 2022Publication date: March 9, 2023Inventors: YUHE CHIOU, SHIH HSUN HUANG, SHAO-PING HUNG
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Patent number: 11143937Abstract: Examples of shutter assembly are described herein. In an example, the shutter assembly includes an opening having a magnetic rubber-based shutter disposed in the opening. The magnetic rubber-based shutter is slidable along a length of the opening to selectively cover and expose the camera.Type: GrantFiled: December 15, 2017Date of Patent: October 12, 2021Assignee: Hewlett-Packard Development Company, L.P.Inventors: Ya-Ting Yeh, Kuan-Ting Wu, Shih-Hsun Huang
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Publication number: 20210286234Abstract: Examples of shutter assembly are described herein. In an example, the shutter assembly includes an opening having a magnetic rubber-based shutter disposed in the opening. The magnetic rubber-based shutter is slidable along a length of the opening to selectively cover and expose the camera.Type: ApplicationFiled: December 15, 2017Publication date: September 16, 2021Inventors: Ya-Ting Yeh, Kuan-Ting Wu, Shih-Hsun Huang
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Publication number: 20210165465Abstract: In one example, a hinge assembly may include a first hinge member and a second hinge member. The first hinge member may include a first hinge base and a first hinge bracket pivotally connected to the first hinge base. The second hinge member may include a second hinge base and a second hinge bracket pivotally connected to the second hinge base. Further, the hinge assembly may include a hydraulic unit connected between the first hinge member and the second hinge member to provide synchronous movements between the first hinge bracket and the second hinge bracket.Type: ApplicationFiled: June 6, 2018Publication date: June 3, 2021Applicant: Hewlett-Packard Development Company, L.P.Inventors: Shih-Hsun Huang, Ya-Ting Yeh
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Publication number: 20200192429Abstract: In one example, a kickstand for a portable electronic device is disclosed which includes a body portion rotatably connected to the portable electronic device. The body portion defines at least one recess. Further, the kickstand includes at least one rubber magnet disposed within the at least one recess. The at least one rubber magnet, when located in close proximity to the portable electronic device, interacts magnetically with at least one magnetic material included within the portable electronic device.Type: ApplicationFiled: July 4, 2017Publication date: June 18, 2020Inventors: KUAN-TING WU, YA-TING YEH, SHIH-HSUN HUANG
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Publication number: 20200110447Abstract: Electronic devices comprising a substrate at least partially enclosed by an energy absorbing material are disclosed herein. The energy absorbing material can integrally or removably attach to the substrate. The substrate can be carbon fiber, glass, ceramic, metal, composite, or mixtures thereof. The energy absorbing material can comprise at least one thermoplastic polymer.Type: ApplicationFiled: April 14, 2017Publication date: April 9, 2020Applicant: Hewlett-Packard Development Company, L.P.Inventors: Kuan-Ting Wu, Ya-Ting Yeh, Shih-Hsun Huang
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Publication number: 20190256984Abstract: Examples relating to coating an alloy substrate are described. For example, techniques for coating a surface of the alloy substrate with a coating layer and an exterior coat include anodizing an alloy substrate to form a metal oxide layer on surface of the alloy substrate and obtain an anodized alloy substrate. The alloy substrate is a metal alloy and the anodized alloy substrate has irregularities on surface. Thereafter, a coating layer is applied on the surface of the alloy substrate to smoothen the surface by providing a uniform covering on the irregularities of the surface. After applying the coating layer, an exterior coat is deposited on the surface of the alloy substrate.Type: ApplicationFiled: October 26, 2016Publication date: August 22, 2019Inventors: YA-TING YEH, KUAN-TING WU, SHIH-HSUN HUANG
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Publication number: 20120172232Abstract: The present invention relates to a nanorod-containing precursor powder, a nanorod-containing superconductor bulk and a method for manufacturing the same. The method for manufacturing a nanorod-containing precursor powder includes the following steps: providing a precursor powder; and forming a plurality of nanorods on particle surfaces of the precursor powder. Accordingly, the present invention can significantly enhance critical current density and pinning force.Type: ApplicationFiled: July 6, 2011Publication date: July 5, 2012Applicant: National Cheng Kung UniversityInventors: In-Gann Chen, Chun-Chih Wang, Shih-Hsun Huang