Patents by Inventor Shih-Jung Tu
Shih-Jung Tu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240096941Abstract: A semiconductor structure includes a substrate with a first surface and a second surface opposite to the first surface, a first and a second shallow trench isolations disposed in the substrate and on the second surface, a deep trench isolation structure in the substrate and coupled to the first shallow trench isolation, a first dielectric layer disposed on the first surface and coupled to the deep trench isolation structure, a second dielectric layer disposed over the first dielectric layer and coupled to the deep trench isolation structure, a third dielectric layer comprising a horizontal portion disposed over the second dielectric layer and a vertical portion coupled to the horizontal portion, and a through substrate via structure penetrating the substrate from the first surface to the second surface and penetrating the second shallow trench isolation.Type: ApplicationFiled: January 11, 2023Publication date: March 21, 2024Inventors: SHIH-JUNG TU, PO-WEI LIU, TSUNG-YU YANG, YUN-CHI WU, CHIEN HUNG LIU
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Publication number: 20230387107Abstract: A method includes: etching a trench on a surface of a substrate; filling the trench with a dielectric material to form a first isolation region; depositing a patterned mask layer on the substrate, the patterned mask layer comprising an opening exposing the substrate; implanting oxygen into the substrate through the opening to form an implant region; generating a second isolation region from the implant region; and forming a transistor on the substrate. The transistor includes a channel laterally surrounding the second isolation region.Type: ApplicationFiled: May 26, 2022Publication date: November 30, 2023Inventors: YUAN-CHENG YANG, YUN-CHI WU, TSU-HSIU PERNG, SHIH-JUNG TU, CHENG-BO SHU, CHIA-CHEN CHANG
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Publication number: 20230299196Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a source region and a drain region arranged over and/or within a substrate. Further, a shallow trench isolation (STI) structure is arranged within the substrate and between the source and drain regions. A gate electrode is arranged over the substrate, over the STI structure, and between the source and drain regions. A portion of the gate electrode extends into the STI structure such that a bottommost surface of the portion of the gate electrode is arranged between a topmost surface of the STI structure and a bottommost surface of the STI structure.Type: ApplicationFiled: May 26, 2023Publication date: September 21, 2023Inventors: Yuan-Cheng Yang, Yun-Chi Wu, Shih-Jung Tu
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Patent number: 11705515Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a source region and a drain region arranged over and/or within a substrate. Further, a shallow trench isolation (STI) structure is arranged within the substrate and between the source and drain regions. A gate electrode is arranged over the substrate, over the STI structure, and between the source and drain regions. A portion of the gate electrode extends into the STI structure such that a bottommost surface of the portion of the gate electrode is arranged between a topmost surface of the STI structure and a bottommost surface of the STI structure.Type: GrantFiled: May 12, 2021Date of Patent: July 18, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yuan-Cheng Yang, Yun-Chi Wu, Shih-Jung Tu
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Publication number: 20220285551Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a source region and a drain region arranged over and/or within a substrate. Further, a shallow trench isolation (STI) structure is arranged within the substrate and between the source and drain regions. A gate electrode is arranged over the substrate, over the STI structure, and between the source and drain regions. A portion of the gate electrode extends into the STI structure such that a bottommost surface of the portion of the gate electrode is arranged between a topmost surface of the STI structure and a bottommost surface of the STI structure.Type: ApplicationFiled: May 12, 2021Publication date: September 8, 2022Inventors: Yuan-Cheng Yang, Yun-Chi Wu, Shih-Jung Tu
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Patent number: 9947678Abstract: A flash memory device is disposed on a semiconductor substrate. The flash memory device includes flash memory cells arranged in rows and columns. Respective flash memory cells include respective access transistors and respective floating gate transistors. The respective access transistors have respective access gates, and the respective floating gate transistors have respective control gates arranged over respective floating gates. First and second wordlines extend substantially in parallel with one another and correspond to first and second rows which neighbor one another. The first wordline is coupled to access gates of access transistors along the first row. The second wordline is coupled to access gates of access transistors along the second row. Nearest edges of the first and second wordlines include at least one wing which extends laterally outward from a sidewall of one of the first and second wordlines towards a sidewall the other of the first and second wordlines.Type: GrantFiled: August 16, 2016Date of Patent: April 17, 2018Assignee: Taiwan Semiductor Manufacturing Co., Ltd.Inventors: Chia-Ta Hsieh, Chi-Wei Ho, Kao-Chao Lin, Josh Lin, Nai-Chao Su, Shih-Jung Tu, Po-Kai Hsu, Shih-Ching Lee, Chen-Ming Huang
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Patent number: 9761687Abstract: A method of forming a gate dielectric layer for a MOS transistor includes the following steps. A gate dielectric layer is formed on a substrate. A nitridation process is performed on the gate dielectric layer. A multi-step post nitridation annealing process including two oxygen-containing annealing steps with different respective annealing temperatures is performed on the gate dielectric layer.Type: GrantFiled: January 4, 2015Date of Patent: September 12, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: Han-Lin Hsu, Po-Lun Cheng, Chun-Liang Chen, Meng-Che Yeh, Shih-Jung Tu
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Publication number: 20170186607Abstract: The method of forming a semiconductor device is provided. A substrate having an exposed oxide layer is provided. A nitridation process is performed for the oxide layer. After the nitridation process, a plasma treatment containing an inert gas is performed for the oxide layer. A conductive layer is formed on the oxide layer.Type: ApplicationFiled: December 28, 2015Publication date: June 29, 2017Inventors: Yi-Ting Kuo, Shih-Jung Tu, Chun-Liang Chen, Po-Lun Cheng
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Publication number: 20160358930Abstract: A flash memory device is disposed on a semiconductor substrate. The flash memory device includes flash memory cells arranged in rows and columns. Respective flash memory cells include respective access transistors and respective floating gate transistors. The respective access transistors have respective access gates, and the respective floating gate transistors have respective control gates arranged over respective floating gates. First and second wordlines extend substantially in parallel with one another and correspond to first and second rows which neighbor one another. The first wordline is coupled to access gates of access transistors along the first row. The second wordline is coupled to access gates of access transistors along the second row. Nearest edges of the first and second wordlines include at least one wing which extends laterally outward from a sidewall of one of the first and second wordlines towards a sidewall the other of the first and second wordlines.Type: ApplicationFiled: August 16, 2016Publication date: December 8, 2016Inventors: Chia-Ta Hsieh, Chi-Wei Ho, Kao-Chao Lin, Josh Lin, Nai-Chao Su, Shih-Jung Tu, Po-Kai Hsu, Shih-Ching Lee, Chen-Ming Huang
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Patent number: 9437603Abstract: A flash memory device is disposed on a semiconductor substrate. The flash memory device includes flash memory cells arranged in rows and columns. Respective flash memory cells include respective access transistors and respective floating gate transistors. The respective access transistors have respective access gates, and the respective floating gate transistors have respective control gates arranged over respective floating gates. First and second wordlines extend substantially in parallel with one another and correspond to first and second rows which neighbor one another. The first wordline is coupled to access gates of access transistors along the first row. The second wordline is coupled to access gates of access transistors along the second row. Nearest edges of the first and second wordlines include at least one wing which extends laterally outward from a sidewall of one of the first and second wordlines towards a sidewall the other of the first and second wordlines.Type: GrantFiled: October 29, 2014Date of Patent: September 6, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Ta Hsieh, Chi-Wei Ho, Kao-Chao Lin, Josh Lin, Nai-Chao Su, Shih-Jung Tu, Po-Kai Hsu, Shih-Ching Lee, Chen-Ming Huang
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Publication number: 20160196971Abstract: A method of forming a gate dielectric layer for a MOS transistor includes the following steps. A gate dielectric layer is formed on a substrate. A nitrdation process is performed on the gate dielectric layer. A multi-step post nitridation annealing process including two oxygen-containing annealing steps with different respective annealing temperatures is performed on the gate dielectric layer.Type: ApplicationFiled: January 4, 2015Publication date: July 7, 2016Inventors: Han-Lin Hsu, Po-Lun Cheng, Chun-Liang Chen, Meng-Che Yeh, Shih-Jung Tu
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Publication number: 20160104713Abstract: A flash memory device is disposed on a semiconductor substrate. The flash memory device includes flash memory cells arranged in rows and columns. Respective flash memory cells include respective access transistors and respective floating gate transistors. The respective access transistors have respective access gates, and the respective floating gate transistors have respective control gates arranged over respective floating gates. First and second wordlines extend substantially in parallel with one another and correspond to first and second rows which neighbor one another. The first wordline is coupled to access gates of access transistors along the first row. The second wordline is coupled to access gates of access transistors along the second row. Nearest edges of the first and second wordlines include at least one wing which extends laterally outward from a sidewall of one of the first and second wordlines towards a sidewall the other of the first and second wordlines.Type: ApplicationFiled: October 29, 2014Publication date: April 14, 2016Inventors: Chia-Ta Hsieh, Chi-Wei Ho, Kao-Chao Lin, Josh Lin, Nai-Chao Su, Shih-Jung Tu, Po-Kai Hsu, Shih-Ching Lee, Chen-Ming Huang
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Patent number: 7875520Abstract: A method of forming CMOS transistor is disclosed. A CMOS transistor having a first active area and a second active area is provided. In order to maintain the concentration of the dopants in the second active area, according to the method of the present invention an ion implantation process is performed to form a lightly doped drain (LDD) in the second active area after an epitaxial layer is formed in the first active area. On the other hand, the ion implantation process is performed to form the respective LDD of the first active area and the second active area. After the epitaxial layer in the first active area is formed, another ion implantation process is performed to implant dopants into the LDD of the second active area again.Type: GrantFiled: March 27, 2008Date of Patent: January 25, 2011Assignee: United Microelectronics Corp.Inventors: Meng-Yi Wu, Cheng-Tung Huang, Wen-Han Hung, Shyh-Fann Ting, Kun-Hsien Lee, Li-Shian Jeng, Shih-Jung Tu, Yu-Ming Lin, Yao-Chin Cheng
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Publication number: 20090246922Abstract: A method of forming CMOS transistor is disclosed. A CMOS transistor having a first active area and a second active area is provided. In order to maintain the concentration of the dopants in the second active area, according to the method of the present invention an ion implantation process is performed to form a lightly doped drain (LDD) in the second active area after an epitaxial layer is formed in the first active area. On the other hand, the ion implantation process is performed to form the respective LDD of the first active area and the second active area. After the epitaxial layer in the first active area is formed, another ion implantation process is performed to implant dopants into the LDD of the second active area again.Type: ApplicationFiled: March 27, 2008Publication date: October 1, 2009Inventors: Meng-Yi Wu, Cheng-Tung Huang, Wen-Han Hung, Shyh-Fann Ting, Kun-Hsien Lee, Li-Shian Jeng, Shih-Jung Tu, Yu-Ming Lin, Yao-Chin Cheng
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Publication number: 20090186475Abstract: A method of manufacturing a MOS transistor, in which, a tri-layer photo resist layer is used to form a patterned hard mask layer having a sound shape and a small size, and the patterned hard mask layer is used to form a gate. Thereafter, by forming and defining a cap layer, a recess is formed through etching in the substrate. The patterned hard mask is removed after epitaxial layers are formed in the recesses. Accordingly, a conventional poly bump issue and an STI oxide loss issue leading to contact bridge can be avoided.Type: ApplicationFiled: January 21, 2008Publication date: July 23, 2009Inventors: Shyh-Fann Ting, Cheng-Tung Huang, Shih-Chieh Hsu, Chih-Chiang Wu, Meng-Yi Wu, Li-Shian Jeng, Chung-Min Shih, Kun-Hsien Lee, Wen-Han Hung, Yao-Chin Cheng, Chi-Sheng Tseng, Yu-Ming Lin, Shih-Jung Tu, Tzyy-Ming Cheng