Abstract: A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine.

Abstract: A continuous type wastewater purifying device includes a wastewater tank defining a predetermined level of wastewater received in the wastewater tank. A purifying piping unit is mounted on a base and includes a wastewater pipe, a purified water pipe, and at least one heat conduction pipe having an inlet end and an outlet end respectively connected to and in communication with the wastewater pipe and the purified water pipe. The wastewater pipe has a first height from a mounting portion of the base in a height direction. The purified water pipe has a second height from the mounting portion in the height direction. The second height is greater than the first height. The inlet end and the outlet end of the at least one heat conduction pipe has a height difference therebetween. The outlet end of the at least one heat conduction pipe is higher than the predetermined level.

Abstract: An inrush current restraining circuit (100) includes a power source (Vcc), a charging/discharging circuit (11), a switching circuit (13), a first impedance component (Z1), a second impedance component (Z2), and a controller (10). The charging/discharging circuit is connected to the power source. An input of the switching circuit is connected to the charging/discharging circuit, and an output of the switching circuit is defined as an output of the inrush current restraining circuit. One end of the first impedance component is connected to the power source. The second impedance component is connected between the other end of the first impedance and the switching circuit. The controller is connected a joint of the first impedance component and the second impedance component, for providing a control signal.

Abstract: An inrush current restraining circuit (100) includes a power source (Vcc), a charging/discharging circuit (11), a switching circuit (13), a first impedance component (Z1), a second impedance component (Z2), and a controller (10). The charging/discharging circuit is connected to the power source. An input of the switching circuit is connected to the charging/discharging circuit, and an output of the switching circuit is defined as an output of the inrush current restraining circuit. One end of the first impedance component is connected to the power source. The second impedance component is connected between the other end of the first impedance and the switching circuit. The controller is connected a joint of the first impedance component and the second impedance component, for providing a control signal.