Abstract: A semiconductor structure comprises a substrate, an adhesion layer, arranged on the substrate, a first release layer, arranged on the adhesion layer and a first semiconductor device, comprising a semiconductor epitaxial stack, and a conducting layer directly connected to the first release layer, wherein the first semiconductor device is not electrically connected to the substrate by the adhesion layer and the first release layer.

Abstract: A device includes a fin extending from a substrate, a gate stack over and along sidewalls of the fin, a gate spacer along a sidewall of the gate stack, and an epitaxial source/drain region in the fin and adjacent the gate spacer. The epitaxial source/drain region includes a first epitaxial layer on the fin, the first epitaxial layer including silicon, germanium, and arsenic, and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin. The epitaxial source/drain region further includes a third epitaxial layer on the second epitaxial layer, the third epitaxial layer including silicon, germanium, and phosphorus.

Abstract: An integrated circuit is disclosed. The integrated circuit is coupled to a circuit board. The circuit board includes several signal pair channels. The integrated circuit includes several output terminals and a control circuit. The control circuit is configured to configure several output signals output to several signal pair channels by several output terminals, so that a first signal pair channel and a second signal pair channel of several signal pair channels receive and output several output signals, so that a third signal pair channel of several signal pair channels shields an interference between the first signal pair channel and the second signal pair channel. The third signal pair channel is adjacent to the first signal pair channel and the second signal pair channel, and the third signal pair channel is located between the first signal pair channel and the second signal pair channel.

Abstract: A method of manufacturing a plurality of via structures includes providing an integrated circuit (IC) photo mask including via features and assist features positioned exclusively along alternating diagonal grid lines of a grid, aligning the IC photo mask with first metal segments of a first metal layer of a semiconductor substrate, the first metal segments having a first spacing corresponding to a first pitch of the grid, performing one or more photolithography processes including the IC photo mask, thereby defining via structure locations corresponding to the via features, and forming via structures at the defined via structure locations.

Abstract: A method of wireless communication locator station to be disposed at specific location includes: detecting rotation angle information of client-based portable device, carried or worn by user, according to specific wireless communication standard between wireless communication locator station and client-based portable device when client-based portable device is within signal range of wireless communication locator station; generating head pose direction estimation according to calculated rotation angle information; and when head pose direction estimation indicates that a user turns face towards wireless communication locator station, sending packet signal from wireless communication locator station to server-based portable device, successfully paired with and security-connected with client-based portable device, so that server-based portable device can transfer packet signal to client-based portable device after receiving packet signal.

Abstract: A device includes a fin extending from a substrate, a gate stack over and along sidewalls of the fin, a gate spacer along a sidewall of the gate stack, and an epitaxial source/drain region in the fin and adjacent the gate spacer. The epitaxial source/drain region includes a first epitaxial layer on the fin, the first epitaxial layer including silicon, germanium, and arsenic, and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin. The epitaxial source/drain region further includes a third epitaxial layer on the second epitaxial layer, the third epitaxial layer including silicon, germanium, and phosphorus.

Abstract: Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

Abstract: A method of applying a protective coating to a substrate includes applying a surface treatment to edges of the substrate to increase surface wettability of the edges and/or preheating the substrate. A curable coating material is applied to the edges. Then, the substrate is spun to adjust a thickness and uniformity of the curable coating material applied on the substrate edges. The curable coating material is cured to form the protective coating on the substrate edges.

Abstract: A method of edge coating a batch of glass articles includes printing masks on surfaces of a glass sheet, where at least one of the masks is a patterned mask defining a network of separation paths. The glass sheet with the printed masks is divided into multiple glass articles along the separation paths. For at least a batch of the glass articles, the edges of the glass articles in the batch are finished to reduce roughness at the edges. Each finished edge is then etched with an etching medium to reduce and/or blunt flaws in the finished edge. A curable coating is simultaneously applied to the etched edges. The curable coatings are pre-cured. Then, the printed masks are removed from the glass articles with the curable coatings. After removing the printed masks, the pre-cured curable coatings are post-cured.