Abstract: A method of forming a semiconductor structure is provided, and includes trimming a first substrate to form a recess on a sidewall of the first substrate. A conductive structure is formed in the first substrate. The method includes bonding the first substrate to a carrier. The method includes thinning down the first substrate. The method also includes forming a dielectric material in the recess and over a top surface of the thinned first substrate. The method further includes performing a planarization process to remove the dielectric material and expose the conductive structure over the top surface. In addition, the method includes removing the carrier from the first substrate.

Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: A method for forming a semiconductor package is provided. The method includes forming a first alignment mark in a first substrate of a first wafer and forming a first bonding structure over the first substrate. The method also includes forming a second bonding structure over a second substrate of a second wafer and trimming the second substrate, so that a first width of the first substrate is greater than a second width of the second substrate. The method further includes attaching the second wafer to the first wafer via the first bonding structure and the second bonding structure, thinning the second wafer until a through-substrate via in the second substrate is exposed, and performing a photolithography process on the second wafer using the first alignment mark.

Abstract: A sprayer, comprising: a container, configured to contain liquid; a passage, comprising a first opening, a second opening, a resonator and a mesh, when the liquid is passed through the resonator, the liquid is emitted as a gas; a first optical sensor, configured to sense first optical data of at least portion of the mesh or at least portion of a surface of the container; and a processing circuit, configured to compute a foaming level of the mesh or of the surface according to the first optical data, and configured to determine whether the resonator should be turned off or not according to the foaming level. In another aspect, the processing circuit estimates a liquid level of the liquid but does not correspondingly turn off the resonator. By this way, the resonator may be turned on or turned off more properly and the liquid level may be more precisely estimated.

Abstract: A method includes forming a first sealing layer at a first edge region of a first wafer; and bonding the first wafer to a second wafer to form a wafer stack. At a time after the bonding, the first sealing layer is between the first edge region of the first wafer and a second edge region of the second wafer, with the first edge region and the second edge region comprising bevels. An edge trimming process is then performed on the wafer stack. After the edge trimming process, the second edge region of the second wafer is at least partially removed, and a portion of the first sealing layer is left as a part of the wafer stack. An interconnect structure is formed as a part of the second wafer. The interconnect structure includes redistribution lines electrically connected to integrated circuit devices in the second wafer.

Abstract: A contact stack of a semiconductor device includes a source/drain feature, a silicide layer wrapping around the source/drain feature, a seed metal layer in direct contact with the silicide layer, and a conductor in contact with the seed metal layer. The contact stack excludes a metal nitride layer in direct contact with the silicide layer.

Abstract: An example computing device includes a first housing portion, a second housing portion moveably connected to the first housing portion, a link to selectively secure the second housing portion to the first housing portion to inhibit movement of the second housing portion relative to the first housing portion, and a shape-memory alloy element to release the link to allow the second housing portion to move relative to the first housing portion.

Abstract: An installing module includes a seat bracket, a plurality of lower gaskets, a device bracket and an upper gasket. The seat bracket includes a first locking plate and a second locking plate locked to each other. The first locking plate includes a first concave and the second locking plate includes a second concave corresponding to the first concave. The lower gaskets are respectively disposed on the first concave and the second concave. The lower gaskets face each other and jointly define a lower assembly hole and are disposed on a lower side of a head-support fixer of a car seat. The device bracket is locked to the seat bracket and an electronic device is pivotally coupled to the device bracket. The upper gasket is disposed between the device bracket and the head-support fixer, and the head-support fixer is clamped between the upper gasket and the lower gaskets.

Abstract: An antenna device and a method for configuring the same are provided. The antenna device includes a grounding metal, a grounding part, a radiating part, a feeding part, a proximity sensor, and a sensing metal. The radiating part is electrically connected to the grounding metal through the grounding part. The feeding part is coupled to the grounding metal through a feeding point. The sensing metal is electrically connected to the proximity sensor. The sensing metal is separated from the radiating part at a distance. The distance is less than or equal to one thousandth of a wavelength corresponding to an operating frequency of the antenna device.

Abstract: A system and method for maximizing bandwidth in an uplink for a 5G communication system is disclosed. Multiple end devices generate image streams. A gateway is coupled to the end devices. The gateway includes a gateway monitor agent collecting utilization rate data of the gateway and an image inspector collecting inspection data from the received image streams. An edge server is coupled to the gateway. The edge server includes an edge server monitor agent collecting utilization rate data of the edge server. An analytics manager is coupled to the gateway and the edge server. The analytics manager is configured to determine an allocation strategy based on the collected utilization rate data from the gateway and the edge server.

Abstract: An integrated circuit (IC) device includes a substrate, and a memory array layer having a plurality of transistors. First through fourth gate contacts are arranged along a first axis, and coupled to underlying gates of the plurality of transistors. First through fifth source/drain contacts in the memory array layer extend along a second axis transverse to the first axis, and are coupled to underlying source/drains of the plurality of transistors. The gate contacts and the source/drain contacts are alternatingly arranged along the first axis. A source line extends along the first axis, and is coupled to the first and fifth source/drain contacts. First and second word lines extend along the first axis, the first word line is coupled to the first and third gate contacts, and the second word line is coupled to the second and fourth gate contacts.

Abstract: A cobalt electroplating composition may include (a) cobalt ions; and (b) an ammonium compound of formula (NR1R2R3H+)nXn?, wherein R1, R2, R3 are independently H or linear or branched C1 to C6 alkyl, X is one or more n valent inorganic or organic counter ion(s), and n is an integer from 1, 2, or 3.

Abstract: A semiconductor structure includes a first dielectric layer on a substrate, a conductive structure disposed in the first dielectric layer and including a terminal portion and an extending portion connecting the terminal portion and extending away from the terminal portion, a second dielectric layer disposed on the first dielectric layer, a conductive via through the second dielectric layer and directly contacting the extending portion, and a dummy via through the second dielectric layer and directly contacting the terminal portion. In a cross-sectional view, a width of the dummy via is smaller than 50% of a width of the conductive via.

Abstract: A transparent antenna includes a substrate, an antenna grid layer, and a ground grid layer. The substrate has an electrically conductive hole extending from two opposite surfaced of the substrate. The antenna grid layer is formed on a surface of the substrate. The antenna grid layer includes a feeding portion and a transmission portion. The ground grid layer is formed on another surface of the substrate. The ground grid layer is coupled to the feeding portion of the antenna grid layer via the electrically conductive hole. An offset distance between a projection of a gridline of the antenna grid layer on the first surface and a projection of a gridline of the ground grid layer on the first surface is smaller than or equal to half of a difference between a line width of the antenna grid layer and a line width of the ground grid layer.

Abstract: A synchronization method between an active stylus and a touch device includes determining whether the active stylus approaches the touch device; starting a timing configuration process after the touch device receives a response signal from the active stylus; and starting a timing calibration process after the timing configuration process is completed.

Abstract: An electrochemical processing device includes a current supply unit, a jig, and a controller. The current supply unit provides current for an electrochemical process. The jig includes a clamping region for clamping a substrate, a plurality of processing electrodes disposed in the clamping region and connected to the current supply unit, and a plurality of measuring electrodes disposed in the clamping region. The controller is connected to the plurality of measuring electrodes. When the jig clamps the substrate to perform the electrochemical process, the controller provides a measuring current to the measuring electrode to measure the thickness of the metal layer of the substrate.

Abstract: A method of fabricating a substrate having a through via includes: providing a carrier board having a release layer thereon; attaching the substrate onto the carrier board via the release layer; applying a light beam to the substrate to form a first blind hole in the substrate, wherein the first blind hole penetrates a first surface and a second surface of the substrate; performing an enlargement process on the first blind hole to form a second blind hole; forming a through via in the second blind hole; and performing a de-bonding process to release the substrate having a through via from the carrier board.

Abstract: A method of fabricating a substrate having a through via includes: providing a carrier board having a release layer thereon; attaching the substrate onto the carrier board via the release layer; applying a light beam to the substrate to form a first blind hole in the substrate, wherein the first blind hole penetrates a first surface and a second surface of the substrate; performing an enlargement process on the first blind hole to form a second blind hole; forming a through via in the second blind hole; and performing a de-bonding process to release the substrate having a through via from the carrier board.

Abstract: A vehicular head-up display system provides a driver with two virtual images in different image distances, wherein each of the virtual images utilizes all pixels of a single image source. Linearly polarized light beams, which are emanated from the image source, pass through a dynamic polarization converter, whereby to form two image light beams with orthogonal polarization states that are switched fast for time-multiplexing. The two image light beams are selected by a polarization selection component for transmission and reflection respectively. The reflected image light beam is handled by an optical relay component to form an intermediate image. A curved mirror reflects the two image light beams to a virtual image reflecting surface to form two virtual images in different virtual image distances in respect to eyes of a driver in front of the virtual image reflecting surface.