Abstract: A multi-layer cathode coating for positive electrode of a rechargeable electrochemical cell (or secondary cell) (such as a lithium-ion secondary battery) and a secondary battery including a cathode having a multi-layer cathode coating. Multi-layer cathode coatings containing blends of one or more cathode active materials in certain weight ratios thereof.

Abstract: A semiconductor device includes a first metal layer, a second metal layer, and an inter-metal dielectric layer disposed between the first metal layer and the second metal layer. The inter-metal dielectric layer includes: a first dielectric layer disposed on the first metal layer and in direct contact with the first metal layer, wherein the first dielectric layer has a stress value less than 0; a second dielectric layer disposed on the first dielectric layer, wherein the second dielectric layer has a stress value greater than 0; and a third dielectric layer disposed on the second dielectric layer, wherein the third dielectric layer has a stress value less than 0. A thickness of the third dielectric layer is greater than a thickness of the second dielectric layer, and the thickness of the second dielectric layer is greater than a thickness of the first dielectric layer.

Abstract: A semiconductor structure is provided and includes a first gate structure, a second gate structure, and at least one local interconnect that extend continuously across a non-active region from a first active region to a second active region. The semiconductor structure further includes a first separation spacer disposed on the first gate structure and first vias on the first gate structure. The first vias are arranged on opposite sides of the first separation spacer are isolated from each other and apart from the first separation spacer by different distances.

Abstract: Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.

Abstract: An integrated circuit structure includes a first metal feature formed into a first dielectric layer, a second metal feature formed into a second dielectric layer, the second dielectric layer being disposed on said first dielectric layer, and a via connecting the first metal feature to the second metal feature, wherein a top portion of the via is offset from a bottom portion of the via.

Abstract: An antenna device and a method for configuring the same are provided. The antenna device includes a grounding metal, a grounding part, a radiating part, a feeding part, a proximity sensor, and a sensing metal. The radiating part is electrically connected to the grounding metal through the grounding part. The feeding part is coupled to the grounding metal through a feeding point. The sensing metal is electrically connected to the proximity sensor. The sensing metal is separated from the radiating part at a distance. The distance is less than or equal to one thousandth of a wavelength corresponding to an operating frequency of the antenna device.

Abstract: A system and method for maximizing bandwidth in an uplink for a 5G communication system is disclosed. Multiple end devices generate image streams. A gateway is coupled to the end devices. The gateway includes a gateway monitor agent collecting utilization rate data of the gateway and an image inspector collecting inspection data from the received image streams. An edge server is coupled to the gateway. The edge server includes an edge server monitor agent collecting utilization rate data of the edge server. An analytics manager is coupled to the gateway and the edge server. The analytics manager is configured to determine an allocation strategy based on the collected utilization rate data from the gateway and the edge server.

Abstract: An improved structure of heterojunction field effect transistor (HFET) and a fabrication method thereof are disclosed. The improved HFET structure comprises sequentially a substrate, a channel layer, a spacing layer, a carrier supply layer, a Schottky layer, a Schottky capping layer formed by a higher energy gap material, a tunneling layer formed by a lower energy gap material, a first etching stop layer, and a first n type doped layer.

Abstract: An improved structure of heterojunction field effect transistor (HFET) and a fabrication method thereof are disclosed. The improved HFET structure comprises sequentially a substrate, a channel layer, a spacing layer, a carrier supply layer, a Schottky layer, a Schottky capping layer formed by a higher energy gap material, a tunneling layer formed by a lower energy gap material, a first etching stop layer, and a first n type doped layer.

Abstract: A cantilever type probe head, the head at least includes a probe having an introducing portion for contacting a pad of a member to be probed, the introducing portion is a conical column with its end face having a tapered portion and an extended rectangular portion, the tapered portion and the extended rectangular portion are provided in a coplanar position at the end face on the introducing portion.

Abstract: A coaxial-cable probe structure comprises a coaxial cable and a probing element. The coaxial cable is formed by filling and fixing an inner conductor into an outer conductor via a dielectric material. The dielectric material of the coaxial cable and the outer conductor are provided with a cutting surface. The inner conductor protrudes from the cutting surface and forms a terminal end. The coaxial cable is provided with a cutting part and the cutting part is provided with an oblique surface relative to the coaxial cable so as to have the inner conductor, the dielectric material, and the outer conductor exposed from the oblique surface. The oblique surface extends to the terminal end of the inner conductor. The probing element includes a first, a second, and a third probe and each probe has a front and a rear interface. The front interface of the second probe is connected with part of the inner conductor exposed from the oblique surface.

Abstract: A cantilever type probe head, the head at least includes a probe having an introducing portion for contacting a pad of a member to be probed, the introducing portion is a conical column with its end face having a tapered portion and an extended rectangular portion, the tapered portion and the extended rectangular portion are provided in a coplanar position at the end face on the introducing portion.

Abstract: A full periphery multi-gate transistor with ohmic strip is disclosed. The multi-gate transistor comprises a substrate, a multi-layer structure, a source finger, a drain finger, and a gate. The gate is formed between the source finger and the drain finger, and then a conduction channel is formed between the source finger and the drain finger. The gate also meanderingly wraps around an end of the source finger and an end of the drain finger. Therefore, the end of the source finger and the end of the drain finger are parts of the conduction channel and both provide channel conductance. In addition, an ohmic strip is formed between two gate lines of the gate.

Abstract: A method to produce a product includes the steps of: providing a mold including an upper mold (40) and a lower mold (30), the upper mold defining a plurality of through holes (43); providing a metal piece (10), a hot melt adhesive, and a nonmetal cover layer (50) between the upper and lower molds, the hot melt adhesive arranged between the hot melt adhesive and the cover layer; closing the mold; heating the mold to melt the hot melt adhesive; conducting high-pressure gas into the mold via the through holes to press the cover layer toward the metal piece; opening the mold to pick up an intermediary product having the metal piece and the cover layer attached thereto by means of the adhesive; and applying a sealing layer (60) which joins corresponding free edges of the metal piece and the cover layer to the intermediary product through injection molding technology.

Abstract: A method to produce a product includes the steps of: providing a mold including an upper mold (40) and a lower mold (30), the upper mold defining a plurality of through holes; providing a workpiece (10), a hot melt adhesive (25), and a cover layer (50) between the upper and lower molds, the hot melt adhesive arranged between the workpiece and the cover layer; providing a heater (20) to melt the hot melt adhesive; closing the mold; conducting high-pressure gas into the mold via the through holes to press the cover layer toward the workpiece; and opening the mold to pick up the product having the workpiece and the cover layer attached thereto by means of the adhesive.

Abstract: A method to produce a product includes the steps of: providing a mold including an upper mold (40) and a lower mold (30), the upper mold defining a plurality of through holes (43); providing a metal piece (10), a hot melt adhesive, and a nonmetal cover layer (50) between the upper and lower molds, the hot melt adhesive arranged between the hot melt adhesive and the cover layer; closing the mold; heating the mold to melt the hot melt adhesive; conducting high-pressure gas into the mold via the through holes to press the cover layer toward the metal piece; opening the mold to pick up an intermediary product having the metal piece and the cover layer attached thereto by means of the adhesive; and applying a sealing layer (60) which joins corresponding free edges of the metal piece and the cover layer to the intermediary product through injection molding technology.

Abstract: A method to produce a product includes the steps of: providing a mold including an upper mold (40) and a lower mold (30), the upper mold defining a plurality of through holes; providing a workpiece (10), a hot melt adhesive (25), and a cover layer (50) between the upper and lower molds, the hot melt adhesive arranged between the workpiece and the cover layer; providing a heater (20) to melt the hot melt adhesive; closing the mold; conducting high-pressure gas into the mold via the through holes to press the cover layer toward the workpiece; and opening the mold to pick up the product having the workpiece and the cover layer attached thereto by means of the adhesive.

Abstract: A method to produce a product includes the steps of: providing a mold including an upper mold (40) and a lower mold (30), the upper mold defining a plurality of through holes (43); providing a metal piece (10), a hot melt adhesive, and a nonmetal cover layer (50) between the upper and lower molds, the hot melt adhesive arranged between the hot melt adhesive and the cover layer; closing the mold; heating the mold to melt the hot melt adhesive; conducting high-pressure gas into the mold via the through holes to press the cover layer toward the metal piece; and opening the mold to pick up the product having the metal piece and the cover layer attached thereto by means of the adhesive.