Abstract: Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.

Abstract: A prediction model for exposure dose is indicated by the following formula, E=E0+EC, wherein E represents an optimized exposure dose, E0 represents a preset exposure dose of a process control system, and EC represents an exposure dose compensation value, and EC=[(MTTdiff/X)/(CDmask/X)]×(ES/A?)×(Wlast+Wavg), wherein MTTdiff represents the differences between the MTT value of a previous lot and the MTT value of a next lot, CDmask represents the actual critical dimension of the mask, X represents the magnification of the mask, ES represents the actual exposure dose of a previous lot, A? represents an experimental value obtained from the results of different lots, Wlast represents the last batch of weights and Wavg represents an average weight, and CDmask, ES, A?, Wlast and Wavg are set parameters built into the process control system.

Abstract: A method of inspecting defect of a mask is provided. In this method, a database for storing a plurality of virtual simulation models is created. The virtual simulation models are determined by a plurality of factors including an optical effect and a chemical effect during the transferring the pattern of a mask to the photoresist layer on a wafer. A mask defect image is acquired. A simulation contour of the mask defect image is generated from at least one virtual simulation model in the database. Next, the acceptability of the mask is determined.

Abstract: A method of inspecting defect of a mask is provided. In this method, a database for storing a plurality of virtual simulation models is created. The virtual simulation models are determined by a plurality of factors including an optical effect and a chemical effect during the transferring the pattern of a mask to the photoresist layer on a wafer. A mask defect image is acquired. A simulation contour of the mask defect image is generated from at least one virtual simulation model in the database. Next, the acceptability of the mask is determined.

Abstract: A prediction model for exposure dose is indicated by the following formula, E=E0+EC, wherein E represents an optimized exposure dose, E0 represents a preset exposure dose of a process control system, and EC represents an exposure dose compensation value, and EC=[(MTTdiff/X)/(CDmask/X)]×(ES/A?)×(Wlast+Wavg), wherein MTTdiff represents the differences between the MTT value of a previous lot and the MTT value of a next lot, CDmask represents the actual critical dimension of the mask, X represents the magnification of the mask, ES represents the actual exposure dose of a previous lot, A? represents an experimental value obtained from the results of different lots, Wlast represents the last batch of weights and Wavg represents an average weight, and CDmask, ES, A?, Wlast and Wavg are set parameters built into the process control system.

Abstract: A method of removing arsenic from water by using a reactor that is provided with a fluidized bed of carriers is disclosed. An arsenic-containing influent is mixed in the reactor with a sulfide aqueous solution or metallic salt aqueous solution at a predetermined pH, thereby resulting in formation of crystals of arsenic sulfides or arsenic acid metal salts. The arsenic contained in the influent is thus removed by crystallization. An effluent with a reduced arsenic content is discharged from the reactor. The carriers, on which the crystals are formed, are periodically removed from the reactor which is replenished with fresh carriers immediately after.

Abstract: A method of removing arsenic from water by using a reactor that is provided with a fluidized bed of carriers is disclosed. An arsenic-containing influent is mixed in the reactor with a sulfide aqueous solution or metallic salt aqueous solution at a predetermined pH, thereby resulting in formation of crystals of arsenic sulfides or arsenic acid metal salts. The arsenic contained in the influent is thus removed by crystallization. An effluent with a reduced arsenic content is discharged from the reactor. The carriers, on which the crystals are formed, are periodically removed from the reactor which is replenished with fresh carriers immediately after.