Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Abstract: A light emitting diode includes a diode structure containing a quantum well, an enhancement layer, and a barrier layer between the enhancement layer and the quantum well. The enhancement layer supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well. The barrier layer serves to block diffusion between the enhancement layer and the diode structure.

Abstract: A modulatable source is to generate a signal. A multi-mode fiber is to propagate the signal. The fiber is associated with a fiber d*NA, corresponding to a product of a fiber diameter (d) and a fiber numerical aperture (NA), substantially between 1 micron radian and 4 micron radian. A receiver is to receive the propagated signal.

Abstract: A switching resistance memory device with an interfacial channel includes a stack made of a layer of a first material and a layer of a second material. The layers form an interface, with the interface comprising the interfacial channel along which charged species can travel. A first electrode contacts a first edge of the stack, and a second electrode contacts a second edge of the stack.

Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.

Abstract: A scattering spectroscopy nanosensor includes a nanoscale-patterned sensing substrate to produce an optical scattering response signal indicative of a presence of an analyte when interrogated by an optical stimulus. The scattering spectroscopy nanosensor further includes a protective covering to cover and protect the nanoscale-patterned sensing substrate. The protective covering is to be selectably removed by exposure to an optical beam incident on the protective covering. The protective covering is to prevent the analyte from interacting with the nanoscale-patterned sensing substrate prior to being removed.

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures arc described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Abstract: A negative index material (or metamaterial) crossbar includes a first layer of approximately parallel nanowires and a second layer of approximately parallel nanowires that overlay the nanowires in the first layer. The nanowires in the first layer are approximately perpendicular in orientation to the nanowires in the second layer. Each nanowire of the first layer and each nanowire of the second layer has substantially regularly spaced fingers. The crossbar further includes resonant elements at nanowire intersections between the respective layers. Each resonant element includes two fingers of a nanowire in the first layer and two fingers of a nanowire in the second layer.

Abstract: A scattering spectroscopy nanosensor includes a nanoscale-patterned sensing substrate to produce an optical scattering response signal indicative of a presence of an analyte when interrogated by an optical stimulus. The scattering spectroscopy nanosensor further includes a protective covering to cover and protect the nanoscale-patterned sensing substrate. The protective covering is to be selectably removed by exposure to an optical beam incident on the protective covering. The protective covering is to prevent the analyte from interacting with the nanoscale-patterned sensing substrate prior to being removed.

Abstract: A nanostructure includes a highly conductive microcrystalline layer, a bipolar nanowire, and another layer (18, 30). The highly conductive microcrystalline layer includes a microcrystalline material and a metal. The bipolar nanowire has one end attached to the highly conductive microcrystalline layer and another end attached to the other layer.

Abstract: A resistive memory structure includes two electrodes sandwiching an insulating region. The structure further includes a nanochannel array providing a conducting path between the two electrodes. The nanochannel array includes a plurality of nanowires that extends from one electrode to the other.

Abstract: A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure.

Abstract: Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device comprises an active region, a first electrode disposed on a first surface of the active region, and a second electrode disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a larger width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode.

Abstract: A DC converter includes a non-isolated conversion module and an isolated conversion module. The non-isolated conversion module is implemented based on a redundant structure and has a first power conversion loop, a second power conversion loop, and an energy storage element. The first and second power conversion loops are connected and share the energy storage element. The energy storage element is further connected to an input terminal of the isolated conversion module. The first and second conversion loops of the non-isolated conversion module convert DC power outputted from two battery sets and output the converted power to the isolated conversion module. The isolated conversion module further supplies DC power to a load. Accordingly, power supply systems using the foregoing DC converter can reduce the number of transformer therein and thus size reduction of the power supply system can be achieved.

Abstract: A scattering spectroscopy nanosensor includes a nanoscale-patterned sensing substrate to produce an optical scattering response signal indicative of a presence of an analyte when interrogated by an optical stimulus. The scattering spectroscopy nanosensor further includes a protective covering to cover and protect the nanoscale-patterned sensing substrate. The protective covering is to be selectably removed by exposure to an optical beam incident on the protective covering. The protective covering is to prevent the analyte from interacting with the nanoscale-patterned sensing substrate prior to being removed.

Abstract: Resistive RAM (RRAM) devices having increased uniformity and related manufacturing methods are described. Greater uniformity of performance across an entire chip that includes larger numbers of RRAM cells can be achieved by uniformly creating enhanced channels in the switching layers through the use of radiation damage. The radiation, according to various described embodiments, can be in the form of ions, electromagnetic photons, neutral particles, electrons, and ultrasound.

Abstract: An optical interconnect (200) includes: a reflective body (230) having a first reflective surface (235) and a second reflective surface (240) opposite the first reflective surface (235); a first optical waveguide (205) that directs a first optical signal received from a first communicating device (105) to the first reflective surface (235); a second optical waveguide (210) that directs the first optical signal from the first reflective surface (235) of the reflective body (230) to a second communicating device (110); a third optical waveguide (215) that directs a second optical signal received from the second communicating device (110) to the second reflective surface (240) of the reflective body (230); and a fourth optical waveguide (220) that directs the second optical signal from the second reflective surface (240) of the reflective body (230) to the first communicating device (105).

Abstract: Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device includes an active region, a first electrode disposed on a first surface of the active region, and a second electrode disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a smaller width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode.

Abstract: Systems, methods, and apparatus to route optical signals are disclosed. An example apparatus to route optical signals includes a plurality of hollow metal waveguide optical switch arrays. Each of the arrays comprises a plurality of optical input ports and a plurality of optical output ports. The input ports and the output ports for a first one of the arrays are arranged in a first plane, the input ports and the output ports for a second one of the arrays are arranged in a second plane, and the plurality of arrays are stacked such that the first and second planes are adjacent. The first one of the arrays is to convey optical signals from a first communication device to a second communication device and the second one of the arrays is to convey optical signals from the second communication device to the first communication device.