Patents by Inventor Shiho Okuno
Shiho Okuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7494724Abstract: A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle an be interrupted when the current reaches a predetermined value.Type: GrantFiled: July 3, 2007Date of Patent: February 24, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Shiho Okuno, Yuichi Ohsawa, Shigeru Haneda, Yuzo Kamiguchi, Tatsuya Kishi
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Patent number: 7355883Abstract: A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.Type: GrantFiled: December 8, 2004Date of Patent: April 8, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Shiho Okuno, Yuichi Ohsawa, Shigeru Haneda, Yuzo Kamiguchi, Tatsuya Kishi
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Publication number: 20080013222Abstract: A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle an be interrupted when the current reaches a predetermined value.Type: ApplicationFiled: July 3, 2007Publication date: January 17, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shiho OKUNO, Yuichi Ohsawa, Shigeru Haneda, Yuzo Kamiguchi, Tatsuya Kishi
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Patent number: 7265950Abstract: A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.Type: GrantFiled: September 8, 2004Date of Patent: September 4, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Shiho Okuno, Yuichi Ohsawa, Shigeru Haneda, Yuzo Kamiguchi, Tatsuya Kishi
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Patent number: 7240419Abstract: A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle can be interrupted when the current reaches a predetermined value.Type: GrantFiled: March 10, 2004Date of Patent: July 10, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Shiho Okuno, Yuichi Ohsawa, Shigeru Haneda, Yuzo Kamiguchi, Tatsuya Kishi
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Patent number: 6937447Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, insulating layer overlying the first ferromagnetic layer, and second ferromagnetic layer overlying the insulating layer. The insulating layer has formed a through hole having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.Type: GrantFiled: September 17, 2002Date of Patent: August 30, 2005Assignee: Kabushiki Kaisha ToshibaInventors: Shiho Okuno, Yuichi Ohsawa, Shigeru Haneda, Yuzo Kamiguchi, Tatsuya Kishi
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Publication number: 20050094327Abstract: A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.Type: ApplicationFiled: December 8, 2004Publication date: May 5, 2005Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shiho Okuno, Yuichi Ohsawa, Shigeru Haneda, Yuzo Kamiguchi, Tatsuya Kishi
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Publication number: 20050042478Abstract: A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.Type: ApplicationFiled: September 8, 2004Publication date: February 24, 2005Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shiho Okuno, Yuichi Ohsawa, Shigeru Haneda, Yuzo Kamiguchi, Tatsuya Kishi
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Publication number: 20040169963Abstract: A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.Type: ApplicationFiled: March 10, 2004Publication date: September 2, 2004Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shiho Okuno, Yuichi Ohsawa, Shigeru Haneda, Yuzo Kamiguchi, Tatsuya Kishi
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Publication number: 20030104249Abstract: A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.Type: ApplicationFiled: September 17, 2002Publication date: June 5, 2003Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shiho Okuno, Yuichi Ohsawa, Shigeru Haneda, Yuzo Kamiguchi, Tatsuya Kishi
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Patent number: 5773156Abstract: A magnetoresistance effect element comprises a magnetic body obtained by dispersing magnetic metal particles containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni in a semiconductor matrix.Type: GrantFiled: January 25, 1996Date of Patent: June 30, 1998Assignee: Kabushiki Kaisha ToshibaInventors: Koichiro Inomata, Keiichiro Yusu, Roger Highmore, Shiho Okuno, Yoshiaki Saito
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Patent number: 5700588Abstract: A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing three magnetic elements of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.Type: GrantFiled: March 8, 1996Date of Patent: December 23, 1997Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiaki Saito, Shiho Okuno, Koichiro Inomata
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Patent number: 5616370Abstract: Disclosed is an artificial multilayer in which ferromagnetic layers and nonmagnetic layers are alternatively laminated, wherein a uniaxial magnetic anisotropy is introduced into the ferromagnetic layers in a predetermined direction, thereby controlling the gradient of the relative change of resistivity to the change of external magnetic field. The uniaxial magnetic anisotropy is introduced into the ferromagnetic layers by applying a magnetic field along the surface of ferromagnetic layers during the formation thereof.Type: GrantFiled: April 23, 1996Date of Patent: April 1, 1997Assignee: Kabushiki Kaisha ToshibaInventors: Shiho Okuno, Susumu Hashimoto, Keiichiro Yusu, Koichiro Inomata
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Patent number: 5607781Abstract: An oxide film having, for example, a spinel structure is deposited on a substrate, and ions of an inert gas such as He, Ar, Ne, Kr, or Xe, oxygen gas ions, or metal ion of a film constituting element are radiated onto the film during deposition, thereby to obtain an oxide thin film in which a specific crystal direction is oriented.Type: GrantFiled: May 26, 1994Date of Patent: March 4, 1997Assignee: Kabushiki Kaisha ToshibaInventors: Shiho Okuno, Susumu Hashimoto, Koichiro Inomata
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Patent number: 5585196Abstract: There is disclosed a magnetoresistance effect element including a multilayer constituted by a magnetic layers in which fine magnetic metal particles of crystalline or amorphous containing at least one element of Fe, Co, and Ni are dispersed in a matrix containing at least one element selected from the group consisting of noble metals and Cu, and non-magnetic layers containing a noble metal.Type: GrantFiled: March 11, 1994Date of Patent: December 17, 1996Assignee: Kabushiki Kaisha ToshibaInventors: Koichiro Inomata, Yoshinori Takahashi, Shiho Okuno, Yoshiaki Saito, Keiichiro Yusu
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Patent number: 5578385Abstract: A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferro-magnetically coupled under a condition where a magnetic field is not substantially applied thereto.Type: GrantFiled: December 27, 1994Date of Patent: November 26, 1996Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiaki Saito, Shiho Okuno, Koichiro Inomata
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Patent number: 5534355Abstract: Disclosed is an artificial multilayer in which ferromagnetic layers and nonmagnetic layers are alternatively laminated, wherein a uniaxial magnetic anisotropy is introduced into the ferromagnetic layers in a predetermined direction, thereby controlling the gradient of the relative change of resistivity to the change of external magnetic field. The uniaxial magnetic anisotropy is introduced into the ferromagnetic layers by applying a magnetic field along the surface of ferromagnetic layers during the formation thereof.Type: GrantFiled: April 19, 1995Date of Patent: July 9, 1996Assignee: Kabushiki Kaisha ToshibaInventors: Shiho Okuno, Susumu Hashimoto, Keiichiro Yusu, Koichiro Inomata
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Patent number: 5523172Abstract: A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.Type: GrantFiled: April 28, 1994Date of Patent: June 4, 1996Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiaki Saito, Shiho Okuno, Koichiro Inomata
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Patent number: 5500633Abstract: A magnetoresistance effect element includes a multilayer stack of alternating magnetic and nonmagnetic layers, and having a mixture layer constituted by a mixture of a ferromagnetic element and a non-ferromagnetic element interposed between adjacent stacked magnetic and non-magnetic layers so as to exhibit a magnetoresistance effect. The multilayered stack includes at least two magnetic layers, at least two mixture layers, and at least one non-magnetic layer. 2(X.sub.1 /X.sub.n)/n is larger than 1.1 where n is the number of atomic layers of the mixture layer, X.sub.1 is an atomic concentration (%) of the ferromagnetic element of an atomic layer closest to the magnetic layer, and X.sub.n is an atomic concentration (%) of the ferromagnetic element of the n-th atomic layer closest to the non-magnetic layer.Type: GrantFiled: October 17, 1994Date of Patent: March 19, 1996Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiaki Saito, Koichiro Inomata, Shiho Okuno, Yoshinori Takahashi
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Patent number: 5365212Abstract: A magnetoresistance effect element includes a multilayer in which magnetic layers, mixture layers each constituted by a mixture of a ferromagnetic element and a non-ferromagnetic element, and nonmagnetic layers are stacked on each other so as to exhibit a magnetoresistance effect. In this element, each of the mixture layers is interposed between the magnetic layer and the nonmagnetic layer, and 2 (X.sub.1 /X.sub.n)/n is larger than 1.1 where n is the number of atomic layers of the mixture layer, X.sub.1 is the atomic concentration (%) of the ferromagnetic element of an atomic layer closest to the magnetic layer, and X.sub.n is the atomic concentration (%) of the ferromagnetic element of an n-th atomic layer closest to the nonmagnetic layer.Type: GrantFiled: August 2, 1993Date of Patent: November 15, 1994Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiaki Saito, Koichiro Inomata, Shiho Okuno, Yoshinori Takahashi