Abstract: A lower electrode of a PIN diode and a second protective layer covering the PIN diode are formed not using separate mask processes, but using the same mask process using the same mask, thereby reducing the number of mask processes and thus increasing process efficiency. Further, the lower electrode of the PIN diode is patterned and then the second protective film covering the PIN diode is patterned such that both the former patterning and the latter patterning are carried out using a single mask process, thereby reduce increase in defects due to foreign materials or stains.

Abstract: The present disclosure relates to a thin film transistor array substrate for a digital X-ray detector device and the digital X-ray detector device and a manufacturing method thereof. The thin film transistor array substrate comprises: a base substrate comprising a driving area and a non-driving area; at least one PIN diode disposed within the driving area of the base substrate and comprising a lower electrode, a PIN layer, and an upper electrode; and at least one align mark disposed within the non-driving area of the base substrate, wherein the align mark comprises a first align mark layer, an align PIN layer, and a second align mark layer.

Abstract: A thin film transistor array substrate for a digital X-ray detector device including a base substrate; a plurality of data lines and a plurality of gate lines disposed on the base substrate and arranged to cross each other; a driving thin film transistor disposed above the base substrate and including a first electrode, a second electrode, a gate electrode and an active layer; a PIN diode connected to the driving thin film transistor; and at least one shielding layers disposed above the driving thin film transistor and configured to overlay the active layer, wherein the at least one shielding layers are electrically connected to the plurality of data lines.

Abstract: A thin film transistor array substrate for a digital X-ray detector device includes a p+ type semiconductor layer and a p? type semiconductor layer having different impurity concentrations are disposed above an intrinsic semiconductor layer of the PIN diode and an n+ type semiconductor layer and an n? type semiconductor layer having different impurity concentrations are disposed below the intrinsic semiconductor layer of the PIN diode to minimize ejection of holes by the p? type semiconductor layer and minimize ejection of electros by the n? type semiconductor layer, thereby minimizing occurrence of leakage current of the PIN diode.

Abstract: A digital X-ray detector includes a width of a data line or a gate line extending across a dummy pixel area is smaller than a width of the data line or the gate line extending across an active area, a width of a dummy gate line or a dummy data line extending across the dummy pixel area is smaller than a width of the gate line or the data line extending across the active area, so that static electricity generated during a manufacturing process does not randomly flow into the active area, but rather flows into the dummy pixel area having the lowest capacitance, and the static electricity may be guided not to the active area but to the dummy gate line or dummy data line in the dummy pixel area, thereby minimizing line defects or block luminance deviation defects caused by the static electricity generated during the manufacturing process.

Abstract: A lower electrode of a PIN diode and a second protective layer covering the PIN diode are formed not using separate mask processes, but using the same mask process using the same mask, thereby reducing the number of mask processes and thus increasing process efficiency. Further, the lower electrode of the PIN diode is patterned and then the second protective film covering the PIN diode is patterned such that both the former patterning and the latter patterning are carried out using a single mask process, thereby reduce increase in defects due to foreign materials or stains.

Abstract: A thin film transistor array substrate for a digital X-ray detector device including a base substrate; a plurality of data lines and a plurality of gate lines disposed on the base substrate and arranged to cross each other; a driving thin film transistor disposed above the base substrate and including a first electrode, a second electrode, a gate electrode and an active layer; a PIN diode connected to the driving thin film transistor; and at least one shielding layers disposed above the driving thin film transistor and configured to overlay the active layer, wherein the at least one shielding layers are electrically connected to the plurality of data lines.

Abstract: The present disclosure relates to a thin film transistor array substrate for a digital X-ray detector device and the digital X-ray detector device and a manufacturing method thereof. The thin film transistor array substrate comprises: a base substrate comprising a driving area and a non-driving area; at least one PIN diode disposed within the driving area of the base substrate and comprising a lower electrode, a PIN layer, and an upper electrode; and at least one align mark disposed within the non-driving area of the base substrate, wherein the align mark comprises a first align mark layer, an align PIN layer, and a second align mark layer.

Abstract: A thin film transistor array substrate for a digital X-ray detector device includes a p+ type semiconductor layer and a p? type semiconductor layer having different impurity concentrations are disposed above an intrinsic semiconductor layer of the PIN diode and an n+ type semiconductor layer and an n? type semiconductor layer having different impurity concentrations are disposed below the intrinsic semiconductor layer of the PIN diode to minimize ejection of holes by the p? type semiconductor layer and minimize ejection of electros by the n? type semiconductor layer, thereby minimizing occurrence of leakage current of the PIN diode.

Abstract: An X-ray detector device includes in one example a switching portion and a photodetecting portion connected to the switching portion. The photodetecting portion includes a bottom electrode, a semiconductor area disposed above the bottom electrode, and a top electrode disposed above the semiconductor area. The area of the top electrode is smaller than the area of a top surface of the semiconductor area.

Abstract: An X-ray detector device includes in one example a switching portion and a photodetecting portion connected to the switching portion. The photodetecting portion includes a bottom electrode, a semiconductor area disposed above the bottom electrode, and a top electrode disposed above the semiconductor area. The area of the top electrode is smaller than the area of a top surface of the semiconductor area.

Abstract: Provided are an array substrate of an X-ray detector, a digital X-ray detector including the same, a method for manufacturing an array substrate of an X-ray detector, and a method for manufacturing an X-ray detector. More specifically, provided are an array substrate of an X-ray detector which is capable of tracking a defective line with high accuracy since the array substrate includes a first line extended in a first direction, a second line extended in the first direction and apart from the first line, and a plurality of line identifiers provided between the first line and the second line, a digital X-ray detector including the same, a method for manufacturing an array substrate of an X-ray detector, and a method for manufacturing an X-ray detector.

Abstract: The present disclosure relates to an array substrate for an X-ray detector and an X-ray detector including the same. The array substrate is defined as an active area and a pad area, wherein the pad area includes a substrate including a first area and a second area extending from the first area, and a plurality of data lines contacting an upper surface of the substrate and extending toward the second area from the first area, adjacent data lines of the plurality of data lines are spaced apart from each other, the upper surface of the substrate is exposed in a area between the adjacent data lines in the first area of the substrate, and a first insulation film is disposed between the substrate and the data lines in the second area of the substrate, thereby preventing a short-circuit between adjacent data lines due to agglomeration between data lines and an organic layer during cutting.

Abstract: The present disclosure relates to an array substrate for an X-ray detector and an X-ray detector including the same. The array substrate is defined as an active area and a pad area, wherein the pad area includes a substrate including a first area and a second area extending from the first area, and a plurality of data lines contacting an upper surface of the substrate and extending toward the second area from the first area, adjacent data lines of the plurality of data lines are spaced apart from each other, the upper surface of the substrate is exposed in a area between the adjacent data lines in the first area of the substrate, and a first insulation film is disposed between the substrate and the data lines in the second area of the substrate, thereby preventing a short-circuit between adjacent data lines due to agglomeration between data lines and an organic layer during cutting.

Abstract: Provided are an array substrate of an X-ray detector, a digital X-ray detector including the same, a method for manufacturing an array substrate of an X-ray detector, and a method for manufacturing an X-ray detector. More specifically, provided are an array substrate of an X-ray detector which is capable of tracking a defective line with high accuracy since the array substrate includes a first line extended in a first direction, a second line extended in the first direction and apart from the first line, and a plurality of line identifiers provided between the first line and the second line, a digital X-ray detector including the same, a method for manufacturing an array substrate of an X-ray detector, and a method for manufacturing an X-ray detector.