Abstract: A metal product includes a metal substrate, at least one first hole, at least one second hole, and at least one third hole. The first hole is formed in a surface of the metal substrate. The second hole is formed in at least one of a portion of the surface of the metal substrate without the first hole and an inner surface defining the first hole. The third hole is formed in at least one of a portion of the surface of the metal substrate without the first hole and without the second hole, a portion of the inner surface defining the first hole without the second hole, and an inner surface defining the second hole. The first, second, and third holes enhance a bonding strength between the metal product and a material product. The disclosure also provides a metal composite and a method for manufacturing the metal product.

Abstract: Polyamidoamine, its partially degraded products or its complexes-Math1 gene nanoparticles, method for preparing the same and use thereof, the gene nanoparticles can be produced through complex coacervating of polyamidoamine, or polyamidoamine complexes and a Math1 gene-containing plasmid. The gene nanoparticles are controllable in particle size, uniform in size, favorable for surface modification, can enhance the ability of expression and delivery of the Math1 gene, and is useful in a sensorineural hearing loss caused by hair cells loss due to noise, drug toxicity etc.

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and/or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and /or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and/or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.