Abstract: An retention flash controller reads assigned-level bits from a bad block/erase count table or from a page status table that indicate when flash memory cells operate as Triple-Level-Cell (TLC), Multi-Level-Cell (MLC), or Single-Level-Cell (SLC). Pages that fail as TLC or MLC are downgraded for use as SLC pages by changing the assigned-level bits. The level bits adjust truth tables used by translation logic that receives inputs from voltage comparators reading a bit line. The range of voltages for each logic level may be adjusted by the truth tables or by programmable registers. The programming voltage or programming pulses may be adjusted to increase endurance and the number of permitted program-erase cycles while reducing retention times before a refresh is needed of the flash cells. Mixed configurations of flash memory have MLC blocks and MLC as SLC blocks, or other combinations.

Abstract: A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.

Abstract: A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.

Abstract: A flash drive has increased endurance and longevity by reducing writes to flash. An Endurance Translation Layer (ETL) is created in a DRAM buffer and provides temporary storage to reduce flash wear. A Smart Storage Switch (SSS) controller assigns data-type bits when categorizing host accesses as paging files used by memory management, temporary files, File Allocation Table (FAT) and File Descriptor Block (FDB) entries, and user data files, using address ranges and file extensions read from FAT. Paging files and temporary files are never written to flash. Partial-page data is packed and sector mapped by sub-sector mapping tables that are pointed to by a unified mapping table that stores the data-type bits and pointers to data or tables in DRAM. Partial sectors are packed together to reduce DRAM usage and flash wear. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract: A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.

Abstract: A Multi-Media Card (MMC) Single-Chip Flash Device (SCFD) contains a MMC flash microcontroller and flash mass storage blocks containing flash memory arrays that are block-addressable rather than randomly-addressable. An initial boot loader is read from the first page of flash by a state machine and written to a small RAM. A central processing unit (CPU) in the microcontroller reads instructions from the small RAM, executing the initial boot loader, which reads more pages from flash. These pages are buffered by the small RAM and written to a larger DRAM. Once an extended boot sequence is written to DRAM, the CPU toggles a RAM_BASE bit to cause instruction fetching from DRAM. Then the extended boot sequence is executed from DRAM, copying an OS image from flash to DRAM. Boot code and control code are selectively overwritten during a code updating operation to eliminate stocking issues.

Abstract: A Low-power flash-memory device uses a modified Universal-Serial-Bus (USB) 3.0 Protocol to reduce power consumption. The bit clock is slowed to reduce power and the need for pre-emphasis when USB cable lengths are short in applications. Data efficiency is improved by eliminating the 8/10-bit encoder and instead encoding sync and framing bytes as 9-bit symbols. Data bytes are expanded by bit stuffing only when a series of six ones occurs in the data. Header and payload data is transmitted as nearly 8-bits per data byte while framing is 9-bits per symbol, much less than the standard 10 bits per byte. Low-power link layers, physical layers, and scaled-down protocol layers are used. A card reader converter hub allows USB hosts to access low-power USB devices. Only one flash device is accessed, reducing power compared with standard USB broadcasting to multiple devices.

Abstract: A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.

Abstract: Methods and systems for storing and accessing data in UAS based flash memory device are disclosed. UAS based flash memory device comprises a controller and a plurality of non-volatile memories (e.g., flash memory) it controls. Controller is configured for connecting to a UAS host via a physical layer (e.g., plug and wire based on USB 3.0) and for conducting data transfer operations via two sets of logical pipes. Controller further comprises a random-access-memory (RAM) buffer configured for enabling parallel and duplex data transfer operations through the sets of logical pipes. In addition, a Smart Storage Switch configured for connecting multiple non-volatile memory devices is included in the controller. Finally, a security module/engine/unit is provided for data security via user authentication data encryption/decryption of the device. Furthermore, the flash memory device includes an optical transceiver configured for optical connection to a host also configured with an optical transceiver.

Abstract: A hybrid storage device comprises both solid-state disk (SDD) and at least one hard disk drive (HDD). The hybrid storage device has at least two operational modes: concatenation and safe. According to one aspect, the total capacity of hybrid storage device is the sum of SSD and at least one HDD in a concatenation or big mode, while the total capacity is the capacity of the HDD in a safe mode. In one embodiment, HDD is configured for storing a copy of the SSD's contents in a reserved area. In another, SSD comprises more than one identical flash memory devices controlled by a RAID controller.

Abstract: A hybrid storage device comprises both solid-state disk (SDD) and at least one hard disk drive (HDD). The hybrid storage device has at least two operational modes: concatenation and safe. According to one aspect, the total capacity of hybrid storage device is the sum of SSD and at least one HDD in a concatenation or big mode, while the total capacity is the capacity of the HDD in a safe mode.

Abstract: A Multi-Media Card (MMC) Single-Chip Flash Device (SCFD) contains a MMC flash microcontroller and flash mass storage blocks containing flash memory arrays that are block-addressable rather than randomly-addressable. An initial boot loader is read from the first page of flash by a state machine and written to a small RAM. A central processing unit (CPU) in the microcontroller reads instructions from the small RAM, executing the initial boot loader, which reads more pages from flash. These pages are buffered by the small RAM and written to a larger DRAM. Once an extended boot sequence is written to DRAM, the CPU toggles a RAM_BASE bit to cause instruction fetching from DRAM. Then the extended boot sequence is executed from DRAM, copying an OS image from flash to DRAM. Boot code and control code are selectively overwritten during a code updating operation to eliminate stocking issues.

Abstract: A Low-power flash-memory device uses a modified Universal-Serial-Bus (USB) 3.0 Protocol to reduce power consumption. The bit clock is slowed to reduce power and the need for pre-emphasis when USB cable lengths are short in applications. Data efficiency is improved by eliminating the 8/10-bit encoder and instead encoding sync and framing bytes as 9-bit symbols. Data bytes are expanded by bit stuffing only when a series of six ones occurs in the data. Header and payload data is transmitted as nearly 8-bits per data byte while framing is 9-bits per symbol, much less than the standard 10 bits per byte. Low-power link layers, physical layers, and scaled-down protocol layers are used. A card reader converter hub allows USB hosts to access low-power USB devices. Only one flash device is accessed, reducing power compared with standard USB broadcasting to multiple devices.

Abstract: Methods and systems for storing and accessing data in UAS based flash memory device are disclosed. UAS based flash memory device comprises a controller and a plurality of non-volatile memories (e.g., flash memory) it controls. Controller is configured for connecting to a UAS host via a physical layer (e.g., plug and wire based on USB 3.0) and for conducting data transfer operations via two sets of logical pipes. Controller further comprises a random-access-memory (RAM) buffer configured for enabling parallel and duplex data transfer operations through the sets of logical pipes. In addition, a Smart Storage Switch configured for connecting multiple non-volatile memory devices is included in the controller. Finally, a security module/engine/unit is provided for data security via user authentication data encryption/decryption of the device. Furthermore, the flash memory device includes an optical transceiver configured for optical connection to a host also configured with an optical transceiver.

Abstract: A multi-format card read/write optical disc drive comprises a micro-controller for processing actions between each component. The micro-controller is connected to a read/write drive, a multi-format card read/write controller, a data codec (coder/decoder), an analog interface transducer, and a computer interface controller. Through the read/write drive and the multi-format card read/write controller, read/write actions are performed to an optical disc and memory cards of various formats, respectively. The data codec is used to decode compressed media data and encode raw data for compression. The analog interface transducer-receives a digital data decoded by the data codec and then converts them into an analog signal for output. The computer interface controller is used to provide connection with a computer for performing bi-directional communications with the computer.

Abstract: A RAID device has command processing and data transmission adapting ability. The RAID device comprises a RAID controller connected to a host computer through a bus, and a plurality of hard disks. The RAID controller comprises a controller, a selection switch, a command register, a data hub. The controller is connected to all other components of the RAID controller. The controller processes command and regulates channel for data transmission such that the data is directly accessed between CPU and storage disk. The buffer memory is saved and the data can be rebuilt to reduce the risk of computer failure.