Abstract: An electrostatic charge image developing toner has toner particles and silica particles that are added to an exterior of the toner particles and contain a nitrogen element-containing compound, in which in a case where A represents a pore volume of pores of the silica particles having a diameter of 1 nm or more and 50 nm or less determined from a pore size distribution curve obtained by a nitrogen adsorption method before baking at 350° C., and B represents a pore volume of pores of the silica particles having a diameter of 1 nm or more and 50 nm or less determined from a pore size distribution curve obtained by a nitrogen adsorption method after baking at 350° C., B/A is 1.2 or more and 5 or less, and B is 0.2 cm3/g or more and 3 cm3/g or less.

Abstract: An electrostatic charge image developing toner has toner particles and silica particles that are added to an exterior of the toner particles, contain a nitrogen element-containing compound, have a ratio C/D of 0.10 or more and 0.75 or less where C represents an integral value of signals observed in a range of chemical shift of ?50 ppm or more and ?75 ppm or less in a 29Si solid-state nuclear magnetic resonance (NMR) spectrum obtained by a cross-polarization/magic angle spinning (CP/MAS) method and D represents an integral value of signals observed in a range of chemical shift of ?90 ppm or more and ?120 ppm or less in the same spectrum, have an extraction amount X of the nitrogen element-containing compound by a mixed solution of ammonia/methanol of 0.1% by mass or more, and satisfy Expression: Y/X<0.

Abstract: An electrostatic charge image developing toner contains toner particles and silica particles that are added to an exterior of the toner particles and contain a nitrogen element-containing compound containing a molybdenum element, in which in the silica particles, a ratio (Mo/Si) of Net intensity of the molybdenum element to Net intensity of a silicon element measured by X-ray fluorescence analysis is 0.035 or more and 0.35 or less.

Abstract: An aqueous emulsion includes a prepolymer that is a reaction product of a multifunctional isocyanate and an acrylic resin having fluorine atoms and hydroxyl groups and having an acid value in a range of 5 mgKOH/g to 100 mgKOH/g; and an aqueous solvent.

Abstract: Provided is an aqueous ink for ink jet recording that includes: water; a water-soluble organic solvent; a coloring material; and a specific compound having a structure expressed by the following General Formula (I), wherein ink pH is in a range of 6.5 to 8.5. In General Formula (I), Ra, Rb, Rc, and Rd each independently represent a structure expressed by General Formula (I-R) or an alkyl group having 1 to 6 carbon atoms which is not branched, R1 represents a hydrogen atom or a methyl group, and n represents an integer in a range of 0 to 3, and the total carbon number of the structure expressed by General Formula (I-R) is equal to or less than 6.

Abstract: Provided is an aqueous ink for ink jet recording that includes: water; a water-soluble organic solvent; a coloring material; and a specific compound having a structure expressed by the following General Formula (I), wherein ink pH is in a range of 6.5 to 8.5. In General Formula (I), Ra, Rb, Rc, and Rd each independently represent a structure expressed by General Formula (I-R) or an alkyl group having 1 to 6 carbon atoms which is not branched, R1 represents a hydrogen atom or a methyl group, and n represents an integer in a range of 0 to 3, and the total carbon number of the structure expressed by General Formula (I-R) is equal to or less than 6.

Abstract: A group III nitride semiconductor laser device comprises a laser structure including a support base of the group III nitride and first and second end facets for a laser cavity, and the first and second end facets intersect with an m-n plane defined by the m-axis of the group III nitride and an axis normal to a semipolar primary surface of the support base. A +c axis vector for a c-axis of the group III nitride forms an angle ALPHA in a range of 71 to 79 degrees with the normal axis. The +c axis vector is inclined at an angle ?1 of 10 to 25 degrees with one normal vector defined at one edge of the first end facet, and is inclined at an angle ?1 of zero to 5 degrees with another normal vector defined at the other edge of the first end facet.

Abstract: A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.

Abstract: A group III nitride semiconductor laser device comprises a laser structure including a support base of the group III nitride and first and second end facets for a laser cavity, and the first and second end facets intersect with an m-n plane defined by the m-axis of the group III nitride and an axis normal to a semipolar primary surface of the support base. A +c axis vector for a c-axis of the group III nitride forms an angle ALPHA in a range of 71 to 79 degrees with the normal axis. The +c axis vector is inclined at an angle ?1 of 10 to 25 degrees with one normal vector defined at one edge of the first end facet, and is inclined at an angle ?1 of zero to 5 degrees with another normal vector defined at the other edge of the first end facet.

Abstract: A method for fabricating a group-III nitride semiconductor laser device stably supplies laser cavity mirrors having a low lasing threshold current through the use of a semi-polar plane. A blade 5g is forced down through a first region ER1 to keep the first region ER1 squeezed between a support member H2 and a movable member H1 together with a part of a protective sheet TF in contact with the first region ER1 while the tension generated in the area of the protective sheet TF in contact with the first region ER1 with the movable member H1 increases until the semi-polar principal surface SF at an end face EG1 of the first region ER1 tilts by a deflection angle THETA from the semi-polar principal surface SF of a second region ER2, and a force is thereby generated in the first region ER1 in a direction opposite to the direction of travel of the blade 5g toward the first region ER1.

Abstract: A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device.

Abstract: A III-nitride semiconductor laser device including: a laser structure including a support base and a semiconductor region, the support base including a hexagonal III-nitride semiconductor and having a semipolar primary surface, and the semiconductor region being provided on the semipolar primary surface of the support base; and an electrode provided on the semiconductor region of the laser structure, the semiconductor region including a first cladding layer, a second cladding layer, and an active layer.

Abstract: A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate having a hexagonal III-nitride semiconductor and having a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, the laser structure including a substrate and a semiconductor region formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal III-nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

Abstract: Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

Abstract: A III-nitride semiconductor laser device including: a laser structure including a support base and a semiconductor region, the support base including a hexagonal III-nitride semiconductor and having a semipolar primary surface, and the semiconductor region being provided on the semipolar primary surface of the support base; and an electrode provided on the semiconductor region of the laser structure, the semiconductor region including a first cladding layer, a second cladding layer, and an active layer.

Abstract: A method for fabricating a group-III nitride semiconductor laser device having a semi-polar surface provides a laser cavity mirror which can reduce lasing threshold current. A support plate H tilts at an angle THETA from an m-axis toward a reference plane Ab defined by a direction PR of travel of the blade 5g and an a-axis in a c-m plane while the direction PR is being orthogonal to the front surface Ha of the support plate H. The blade 5g is positioned so as to be aligned to a plane which includes an intersection P1 between the endmost scribe mark 5b1 among a plurality of scribe marks 5b and the front surface 5a of the substrate product 5 and extends along the direction PR. In the case where the angle ALPHA defined ranges either from 71 to 79 degrees or from 101 to 109 degrees, the angle THETA then ranges from 11 to 19 degrees, and thereby the reference plane Ab along the direction PR extends along the c-plane orthogonal to the c-axis.

Abstract: A III-nitride semiconductor laser device includes a laser structure including a support base, a semiconductor region, and an electrode. The support base includes a hexagonal III-nitride semiconductor and a semipolar primary surface. The semiconductor region includes first and second cladding layers and an active layer arranged along an axis normal to the semipolar primary surface. A c-axis of the hexagonal III-nitride semiconductor is inclined at an angle ALPHA with respect to the normal axis toward an m-axis of the hexagonal III-nitride semiconductor. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the normal axis and the m-axis of the hexagonal III-nitride semiconductor. A laser cavity of the laser device includes the first and second fractured faces. Each of the first and second fractured faces have a stripe structure on an end face of the support base.

Abstract: Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

Abstract: A method for fabricating a group-III nitride semiconductor laser device stably supplies laser cavity mirrors having a low lasing threshold current through the use of a semi-polar plane. A blade 5g is forced down through a first region ER1 to keep the first region ER1 squeezed between a support member H2 and a movable member H1 together with a part of a protective sheet TF in contact with the first region ER1 while the tension generated in the area of the protective sheet TF in contact with the first region ER1 with the movable member H1 increases until the semi-polar principal surface SF at an end face EG1 of the first region ER1 tilts by a deflection angle THETA from the semi-polar principal surface SF of a second region ER2, and a force is thereby generated in the first region ER1 in a direction opposite to the direction of travel of the blade 5g toward the first region ER1.

Abstract: A III-nitride semiconductor laser device includes a laser structure including a support base, a semiconductor region, and an electrode. The support base includes a hexagonal III-nitride semiconductor and a semipolar primary surface. The semiconductor region includes first and second cladding layers and an active layer arranged along an axis normal to the semipolar primary surface. A c-axis of the hexagonal III-nitride semiconductor is inclined at an angle ALPHA with respect to the normal axis toward an m-axis of the hexagonal III-nitride semiconductor. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the normal axis and the m-axis of the hexagonal III-nitride semiconductor. A laser cavity of the laser device includes the first and second fractured faces. Each of the first and second fractured faces have a stripe structure on an end face of the support base.