Patents by Inventor Shin Ae Jun

Shin Ae Jun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11958998
    Abstract: A composition including a plurality of quantum dots; a binder polymer; a thiol compound having at least two thiol groups; a polyvalent metal compound; a polymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent.
    Type: Grant
    Filed: May 5, 2021
    Date of Patent: April 16, 2024
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG DISPLAY CO., LTD., SAMSUNG SDI CO., LTD.
    Inventors: Ha Il Kwon, Tae Gon Kim, Shang Hyeun Park, Eun Joo Jang, Shin Ae Jun, Garam Park
  • Patent number: 11959003
    Abstract: A quantum dot including a core including a semiconductor nanocrystal including a Group III-V compound; and a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc, selenium, and optionally sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc, sulfur, and optionally selenium, wherein the quantum dot does not include cadmium, an emission peak wavelength of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and an ultraviolet-visible absorption spectrum of the quantum dot includes a first exciton absorption peak and a second exciton absorption peak, a composition including the same, a composite, and an electronic device.
    Type: Grant
    Filed: February 13, 2023
    Date of Patent: April 16, 2024
    Assignee: SAMSUNG DISPLAY CO., LTD
    Inventors: Nayoun Won, Garam Park, Shin Ae Jun, Tae Gon Kim, Taekhoon Kim, Shang Hyeun Park, Mi Hye Lim
  • Publication number: 20240105885
    Abstract: A display panel including a wavelength conversion structure that includes a base structure including partition walls that define a first space and a second space, a first quantum dot composite disposed in the first space, and a second quantum dot composite disposed in the second space. The height of the partition wall is greater than or equal to about 5 micrometers and less than or equal to about 50 micrometers, and the first quantum dot composite provides a first top surface and the second quantum dot composite provides a second top surface. A production method for making the wavelength conversion structure uses a first ink composition that includes first quantum dots and a first matrix, and a second ink composition that includes second quantum dots and a second matrix.
    Type: Application
    Filed: November 27, 2023
    Publication date: March 28, 2024
    Inventors: Shang Hyeun PARK, Deukseok CHUNG, Tae Gon KIM, Min Jong BAE, Shin Ae JUN
  • Publication number: 20240099094
    Abstract: A display panel includes a color conversion panel and a light emitting panel, the light emitting panel includes a light emitting device that includes a first electrode, a second electrode, and a blue light emitting unit that includes an organic light emitting layer and is disposed between the first electrode and the second electrode and is configured to emit blue light. The color conversion panel includes a color conversion layer including at least two color conversion regions, and optionally, a partition wall defining that at least two regions, wherein the color conversion region includes a first region corresponding to a green pixel, a second region corresponding to a red pixel, and optionally a third region corresponding to a blue pixel.
    Type: Application
    Filed: August 29, 2023
    Publication date: March 21, 2024
    Inventors: Tae-Gon KIM, Joonghyuk KIM, Seung-Yeon KWAK, Ji Whan KIM, Sunghun LEE, Shin Ae JUN, Deuk Seok CHUNG, Hyeonho CHOI
  • Patent number: 11927838
    Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.
    Type: Grant
    Filed: July 11, 2023
    Date of Patent: March 12, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae Gon Kim, Garam Park, Jooyeon Ahn, Shang Hyeun Park, Shin Ae Jun
  • Patent number: 11917885
    Abstract: An electronic device includes a first substrate, a plurality of light emitting elements each having a horizontal length and a vertical length which are less than or equal to about 10 micrometers (?m), each of the plurality of light emitting elements being disposed on the first substrate, a quantum dot color filter layer disposed on the plurality of light emitting elements, and a first overcoat layer between a plurality of light emitting elements and the quantum dot color filter layer. The quantum dot color filter layer includes a plurality of quantum dot color filters partitioned by a plurality of first partition walls so as to be overlapped with the plurality of light emitting elements, respectively.
    Type: Grant
    Filed: May 10, 2021
    Date of Patent: February 27, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Min Jong Bae, Deukseok Chung, Tae Gon Kim, Shang Hyeun Park, Shin Ae Jun
  • Patent number: 11912920
    Abstract: A quantum dot-polymer composite including a polymer matrix; and core-shell quantum dots dispersed in the polymer matrix, wherein the core-shell quantum dots include a semiconductor nanocrystal core including indium, zinc, and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur. The core-shell quantum dots do not include cadmium, the core-shell quantum dots are configured to emit green light, the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to about 0.75, and the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to about 35, and a method of producing the core-shell quantum dots, and a display device including a light emitting element that includes the quantum dot-polymer composite.
    Type: Grant
    Filed: November 9, 2020
    Date of Patent: February 27, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Taekhoon Kim, Nayoun Won, Tae Gon Kim, Mi Hye Lim, Shin Ae Jun, Shang Hyeun Park
  • Patent number: 11912913
    Abstract: A quantum dot-polymer composite pattern including at least one repeating section configured to emit light of a predetermined wavelength, and a production method and a display device including the quantum dot-polymer composite are disclosed. The quantum dot-polymer composite includes a polymer matrix including linear polymer including a carboxylic acid group-containing repeating unit and a plurality of cadmium-free quantum dots dispersed in the polymer matrix, has an absorption rate of greater than or equal to about 85% for light at wavelength of about 450 nm, and has an area ratio of a hydroxy group peak relative to an acrylate peak of greater than or equal to about 2.6 in Fourier transform infrared spectroscopy.
    Type: Grant
    Filed: March 27, 2023
    Date of Patent: February 27, 2024
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Shang Hyeun Park, Tae Gon Kim, Shin Ae Jun
  • Patent number: 11903228
    Abstract: A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.
    Type: Grant
    Filed: April 3, 2023
    Date of Patent: February 13, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nayoun Won, Mi Hye Lim, Tae Gon Kim, Taekhoon Kim, Shang Hyeun Park, Shin Ae Jun
  • Patent number: 11898073
    Abstract: A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: February 13, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-Joo Jang, Seok-Hwan Hong, Shin-Ae Jun, Hyo-Sook Jang
  • Publication number: 20240014358
    Abstract: An electroluminescent device that includes a first electrode and a second electrode spaced apart from each other, a light emitting layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the light emitting layer and the second electrode, and an organic layer disposed on the electron transport layer. The light emitting layer includes a plurality of semiconductor nanoparticles, the electron transport layer includes a plurality of metal oxide nanoparticles, and the organic layer includes a polymeric acid compound.
    Type: Application
    Filed: July 10, 2023
    Publication date: January 11, 2024
    Inventors: Hong Kyu SEO, Soonmin CHA, Dongchan KIM, Enjung KIM, Taehyung KIM, Tae Ho KIM, Shin Ae JUN, You Jung CHUNG
  • Patent number: 11867988
    Abstract: A layered structure including a transparent substrate; a photoluminescent layer disposed on the transparent substrate and a pattern of a quantum dot polymer composite; and a capping layer disposed on the photoluminescent layer and including an inorganic material, a method of producing the same, a liquid crystal display including the same. The quantum dot polymer composite includes a polymer matrix; and a plurality of quantum dots in the polymer matrix, the pattern of the quantum dot polymer composite includes at least one repeating section and the repeating section includes a first section configured to emit light of a first peak wavelength, the inorganic material is disposed on at least a portion of a surface of the repeating section, and the inorganic material includes a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof.
    Type: Grant
    Filed: August 23, 2021
    Date of Patent: January 9, 2024
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG DISPLAY CO., LTD., SAMSUNG SDI CO., LTD.
    Inventors: Deukseok Chung, Shin Ae Jun, Tae Won Jeong, Yong Seok Han
  • Patent number: 11870018
    Abstract: A display panel including a wavelength conversion structure that includes a base structure including partition walls that define a first space and a second space, a first quantum dot composite disposed in the first space, and a second quantum dot composite disposed in the second space. The height of the partition wall is greater than or equal to about 5 micrometers and less than or equal to about 50 micrometers, and the first quantum dot composite provides a first top surface and the second quantum dot composite provides a second top surface. A production method for making the wavelength conversion structure uses a first ink composition that includes first quantum dots and a first matrix, and a second ink composition that includes second quantum dots and a second matrix.
    Type: Grant
    Filed: November 10, 2021
    Date of Patent: January 9, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Shang Hyeun Park, Deukseok Chung, Tae Gon Kim, Min Jong Bae, Shin Ae Jun
  • Patent number: 11866630
    Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, tellurium, and selenium, wherein the quantum dot does not include cadmium, and the semiconductor nanocrystal shell has a mole ratio of tellurium to selenium of less than about 0.025:1, a composition including the quantum dot, a quantum dot-polymer composite, a patterned layer including the composite, and an electronic device including the patterned layer.
    Type: Grant
    Filed: December 19, 2022
    Date of Patent: January 9, 2024
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Taekhoon Kim, Shin Ae Jun, Yong Wook Kim, Tae Gon Kim, Garam Park
  • Publication number: 20240001326
    Abstract: An apparatus for accelerated multi-stage synthesis of quantum dots (QDs) includes an injector which injects a material for producing QDs, a first reactor connected to the injector and including at least one selected from a coil reactor and a plate reactor, a second reactor connected to the first reactor and including at least one selected from the coil reactor and the plate reactor, and a first junction connected between the first reactor and the second reactor and provided with an inlet for injecting the material for producing the QDs.
    Type: Application
    Filed: June 29, 2022
    Publication date: January 4, 2024
    Inventors: Taekhoon KIM, Milad Abolhasani, Hyeyeon YANG, Shin Ae JUN, Robert W. EPPS
  • Patent number: 11845888
    Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
    Type: Grant
    Filed: November 17, 2022
    Date of Patent: December 19, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yuho Won, Nayoun Won, Sungwoo Hwang, Eun Joo Jang, Soo Kyung Kwon, Yong Wook Kim, Jihyun Min, Garam Park, Shang Hyeun Park, Hyo Sook Jang, Shin Ae Jun, Yong Seok Han
  • Patent number: 11835856
    Abstract: A photosensitive composition including a quantum dot dispersion, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, and wherein the acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic group and not having a carboxylic acid group and a phosphonic acid group.
    Type: Grant
    Filed: March 17, 2021
    Date of Patent: December 5, 2023
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG SDI CO., LTD.
    Inventors: Shin Ae Jun, Shang Hyeun Park, Hojeong Paek, Jonggi Kim, Hyeyeon Yang, Eun Joo Jang, Yong Seok Han
  • Patent number: 11827828
    Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
    Type: Grant
    Filed: November 28, 2022
    Date of Patent: November 28, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Garam Park, Eun Joo Jang, Yongwook Kim, Jihyun Min, Hyo Sook Jang, Shin Ae Jun, Taekhoon Kim, Yuho Won
  • Publication number: 20230374379
    Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.
    Type: Application
    Filed: August 3, 2023
    Publication date: November 23, 2023
    Inventors: Garam PARK, Tae Gon KIM, Jooyeon AHN, Ji-Yeong KIM, Nayoun WON, Shin Ae JUN
  • Publication number: 20230365861
    Abstract: A quantum dot-polymer composite including a polymer matrix; and core-shell quantum dots dispersed in the polymer matrix, wherein the core-shell quantum dots include a semiconductor nanocrystal core including indium, zinc, and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur. The core-shell quantum dots do not include cadmium, the core-shell quantum dots are configured to emit green light, the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to about 0.75, and the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to about 35, and a method of producing the core-shell quantum dots, and a display device including a light emitting element that includes the quantum dot-polymer composite.
    Type: Application
    Filed: July 19, 2023
    Publication date: November 16, 2023
    Inventors: Taekhoon Kim, Nayoun Won, Tae Gon Kim, Mi Hye Lim, Shin Ae Jun, Shang Hyeun Park