Abstract: A single crystal production apparatus that is designed to produce a single crystal by cooling a melting zone formed by a heating part including an infrared generation part and a reflection part, wherein: the reflection part includes a spheroidal mirror and a concave spherical mirror; the infrared generation part is disposed at one focal point of the spheroidal mirror; an opening is formed in the spheroidal mirror on the side of the other focal point of the spheroidal mirror; and the one focal point and the spherical center of the concave spherical mirror fall on the same location.

Abstract: To provide a single crystal production apparatus capable of efficiently producing a single crystal of relatively high quality, by cooling a melting zone, the device including: a heating part that forms the melting zone from a raw material by irradiation of light; and a supporting part that supports the melting zone in a non-contact manner.

Abstract: A single crystal production apparatus that is designed to produce a single crystal by cooling a melting zone formed by a heating part including an infrared generation part and a reflection part, wherein: the reflection part includes a spheroidal mirror and a concave spherical mirror; the infrared generation part is disposed at one focal point of the spheroidal mirror; an opening is formed in the spheroidal mirror on the side of the other focal point of the spheroidal mirror; and the one focal point and the spherical center of the concave spherical mirror fall on the same location.

Abstract: To provide a single crystal production apparatus capable of efficiently producing a single crystal of relatively high quality, by cooling a melting zone, the device including: a heating part that forms the melting zone from a raw material by irradiation of light; and a supporting part that supports the melting zone in a non-contact manner.

Abstract: A single crystal production apparatus (and a single crystal production method) is configured to produce a single crystal by approaching a raw material M gripped by a raw material grip portion, and a seed crystal S gripped by a seed crystal grip portion by disposing the raw material grip portion and the seed crystal grip portion mutually in a vertical direction and approaching both of them each other, and forming a melting zone M1 by making a portion melted by heating the raw material M by a heating part in contact with the seed crystal S, and cooling the melting zone, wherein the heating part has an infrared generating part, and the seed crystal grip portion is disposed at a vertically top position, and the raw material grip portion is disposed at a vertically bottom position.

Abstract: A single crystal production apparatus (and a single crystal production method) is configured to produce a single crystal by approaching a raw material M gripped by a raw material grip portion, and a seed crystal S gripped by a seed crystal grip portion by disposing the raw material grip portion and the seed crystal grip portion mutually in a vertical direction and approaching both of them each other, and forming a melting zone M1 by making a portion melted by heating the raw material M by a heating part in contact with the seed crystal S, and cooling the melting zone, wherein the heating part has an infrared generating part, and the seed crystal grip portion is disposed at a vertically top position, and the raw material grip portion is disposed at a vertically bottom position.